HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6762
Issued Date : 1994.11.09
Revised Date : 2002. 01.15
Page No. : 1/3
HD44H11 HSMC Product Specification
HD44H11
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HD44H11 is designed for various specific and general purpose
applicati ons, s uch as:ou tput and dr iv er st ages o f ampli fiers oper ating
at frequencies from DC to greater than 1MHz; series, shunt and
switching regulators; low and high frequency inverters/converters;
and many others.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temper ature............................................................................................ -55 ~ +150 °C
Junction Temperature.....................................................................................+150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 50 W
Total Power Dissipation (Ta=25°C).................................................................................. 1.67 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage....................................................................................... 80 V
BVCEO Collector to Emitter Voltage.................................................................................... 80 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................. 10 A
IB Base Current..................................................................................................................... 5 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 80 - - V IC=100mA, IB=0
BVCEO 80 - - V IC=100mA, IB=0
BVCES 80 - - V IC=1mA, IC= 0
BVEBO 5 - - V IE=1mA
ICES - - 10 uA VCE=80V
IEBO - - 100 uA VEB=5V
*VCE(sat) - - 1 V IC=8A, IB=0.4A
*VBE(sat) - - 1.5 V IC=8A, IB=0.8A
*hFE1 60 - - IC=2A, VCE=1V
*hFE2 40 - - IC=4A, VCE=1V
Cob - 130 - pF VCB=10V
fT - 50 - MHz VCE=1V, IC=500mA, f=100MHz
*Pulse Test: Pulse Width ≤380us, Dut y Cycle≤2%
TO-220