MUR1100E - ON Semiconductor

 Semiconductor Components Industries, LLC, 2002

August, 2002 – Rev. 1 1Publication Order Number:

MUR180E/D

MUR180E, MUR1100E

MUR1100E is a Preferred Device

SWITCHMODE

Power Rectifiers

Ultrafast “E” Series with High Reverse

Energy Capability

. . . designed for use in switching power supplies, inverters and as

free wheeling diodes, these state–of–the–art devices have the

following features:

•10 mjoules Avalanche Energy Guaranteed

•Excellent Protection Against Voltage Transients in Switching

Inductive Load Circuits

•Ultrafast 75 Nanosecond Recovery Time

•175°C Operating Junction Temperature

•Low Forward Voltage

•Low Leakage Current

•High Temperature Glass Passivated Junction

•Reverse Voltage to 1000 Volts

Mechanical Characteristics:

•Case: Epoxy, Molded

•Weight: 0.4 gram (approximately)

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead and Mounting Surface Temperature for Soldering Purposes:

220°C Max. for 10 Seconds, 1/16″ from case

•Shipped in plastic bags, 1000 per bag

•Available Tape and Reeled, 5000 per reel, by adding a “RL’’ suffix to

the part number

•Polarity: Cathode Indicated by Polarity Band

•Marking: MUR180E, MUR1100E

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage MUR180E

MUR1100E

VRRM

VRWM

VR800

1000

Average Rectified Forward Current

(Note 1.) (Square Wave Mounting

Method #3 Per Note 3.)

IF(AV) 1.0 @

TA = 95°CA

Non-Repetitive Peak Surge Current

(Surge applied at rated load conditions,

halfwave, single phase, 60 Hz)

IFSM 35 A

Operating Junction Temperature and

Storage Temperature Range TJ, Tstg –65 to

+175 °C

1. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤2.0%.

Device Package Shipping

ORDERING INFORMATION

MUR180ERL Axial Lead 5000/Tape & Reel

MUR180E Axial Lead 1000 Units/Bag

ULTRAFAST

RECTIFIERS

1.0 AMPERES

800–1000 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

AXIAL LEAD

CASE 059–10

PLASTIC

MARKING DIAGRAM

MUR1x0E

MUR1x0E = Device Code

x = 8 or 10

MUR1100ERL Axial Lead 5000/Tape & Reel

MUR1100E Axial Lead 1000 Units/Bag

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THERMAL CHARACTERISTICS

Rating Symbol Value Unit

Maximum Thermal Resistance, Junction to Ambient RJA See Note 3. °C/W

ELECTRICAL CHARACTERISTICS

Maximum Instantaneous Forward Voltage (Note 2.)

(iF = 1.0 Amp, TJ = 150°C)

(iF = 1.0 Amp, TJ = 25°C)

vF1.50

1.75

Volts

Maximum Instantaneous Reverse Current (Note 2.)

(Rated dc Voltage, TJ = 100°C)

(Rated dc Voltage, TJ = 25°C)

iR600

A

Maximum Reverse Recovery Time

(IF = 1.0 Amp, di/dt = 50 Amp/s)

(IF = 0.5 Amp, iR = 1.0 Amp, IREC = 0.25 Amp)

trr 100

Maximum Forward Recovery Time

(IF = 1.0 Amp, di/dt = 100 Amp/s, Recovery to 1.0 V) tfr 75 ns

Controlled Avalanche Energy (See Test Circuit in Figure 6) WAVAL 10 mJ

2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤2.0%.

MUR180E, MUR1100E

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ELECTRICAL CHARACTERISTICS

Figure 1. Typical Forward Voltage

vF, INSTANTANEOUS VOLTAGE (VOLTS)

0.3 0.90.5 1.3

3.0

0.01

0.03

0.02

0.2

0.1

2.0

0.7

0.3

0.05

0.5

5.0

, INSTANTANEOUS FORWARD CURRENT (AMPS)

2.3

VR, REVERSE VOLTAGE (VOLTS)

0 300200 500 600

1000

0.1

0.01

100

TJ = 175°C

100 400 1000

Figure 2. Typical Reverse Current*

IF(AV), AVERAGE FORWARD CURRENT (AMPS)

1.0

2.0

3.0

4.0

5.0

PF(AV)

0.5 1.0 1.5 2.0 2.5

TA, AMBIENT TEMPERATURE (°C)

050

2.0

1.0

3.0

5.0

4.0

250

Figure 3. Current Derating

(Mounting Method #3 Per Note 1)

Figure 4. Power Dissipation

3.0

2.0

10 20

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Typical Capacitance

0.7

0.07

1.0

7.0

1.7 2.1

100°C

TJ = 175°C25°C

800 900700

1.0

, REVERSE CURRENT ( A)

100°C

25°C

150100 200

* The curves shown are typical for the highest voltage device in the

grouping. Typical reverse current for lower voltage selections can be

estimated from these same curves if VR is sufficiently below rated VR.

C, CAPACITANCE (pF)

, AVERAGE POWER DISSIPATION (WATTS)

TJ = 25°C

, AVERAGE FORWARD CURRENT (AMPS)

F(AV)

30 40 50

7.0

5.0

TJ = 175°C

RATED VR

RJA = 50°C/W

SQUARE WAVE



(CAPACITIVELOAD)

IPK

IAV 20

SQUARE WAVE

5.010

1.1 1.5 1.9

MUR180E, MUR1100E

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MERCURY

SWITCH

DUT

40 mH COIL

+VDD

BVDUT

ILID

VDD

t0t1t2t

Figure 6. Test Circuit Figure 7. Current–Voltage Waveforms

The unclamped inductive switching circuit shown in

Figure 6 was used to demonstrate the controlled avalanche

capability of the new “E’’ series Ultrafast rectifiers. A

mercury switch was used instead of an electronic switch to

simulate a noisy environment when the switch was being

opened.

When S 1 is closed at t0 the current in the inductor IL ramps

up linearly; and energy is stored in the coil. At t1 the switch

is opened and the voltage across the diode under test begins

to rise rapidly , due to di/dt ef fects, when this induced voltage

reaches the breakdown voltage of the diode, it is clamped at

BVDUT and the diode begins to conduct the full load current

which now starts to decay linearly through the diode, and

goes to zero at t2.

By solving the loop equation at the point in time when S1

is opened; and calculating the energy that is transferred to

the diode it can be shown that the total energy transferred is

equal t o the ener gy stored in the inductor plus a finite amount

of energy from the VDD power supply while the diode is in

breakdown (from t1 to t2) minus any losses due to finite

component resistances. Assuming the component resistive

elements are small Equation (1) approximates the total

energy transferred to the diode. It can be seen from this

equation that if the VDD voltage is low compared to the

breakdown voltage of the device, the amount of energy

contributed b y the supply during breakdown is small and the

total ener gy can be assumed to be nearly equal to the ener gy

stored in the coil during the time when S1 was closed,

Equation (2).

The oscilloscope picture in Figure 8, shows the

information obtained for the MUR8100E (similar die

construction as the MUR1100E Series) in this test circuit

conducting a peak current of one ampere at a breakdown

voltage of 1300 volts, and using Equation (2) the energy

absorbed by the MUR8100E is approximately 20 mjoules.

Although it is not recommended to design for this

condition, the new “E’’ series provides added protection

against those unforeseen transient viruses that can produce

unexplained random failures in unfriendly environments.

WAVAL 1

2LI2

LPKBVDUT

BVDUT–VDD

WAVAL 1

2LI2

LPK

Figure 8. Current–Voltage Waveforms

CHANNEL 2:

0.5 AMPS/DIV.

CHANNEL 1:

VDUT

500 VOLTS/DIV.

TIME BASE:

20 s/DIV.

EQUATION (1):

EQUATION (2):

CH1 CH2 REF REF

CH1

CH2

ACQUISITIONS

SAVEREF SOURCE

1 217:33 HRS

STACK

A20s 953 V VERT500V

50mV

MUR180E, MUR1100E

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Lead Length, L

Mounting

Method 1/8 1/4 1/2 Units

RJA

65 72

80 87

°C/W

TYPICAL VALUES FOR RJA IN STILL AIR

Data shown for thermal resistance junction to

ambient (RJA) for the mountings shown is to be

used as typical guideline values for preliminary

engineering or in case the tie point temperature

cannot be measured.

NOTE 3. — AMBIENT MOUNTING DATA

MOUNTING METHOD 1

MOUNTING METHOD 2

MOUNTING METHOD 3

ÉÉÉÉÉÉÉÉÉÉÉ

L L

ÉÉÉÉÉÉÉÉÉÉÉÉ

L L

Vector Pin Mounting

ÉÉ

L = 3/8

Board Ground Plane

P.C. Board with

1–1/2 X 1–1/2 Copper Surface″″

″

MUR180E, MUR1100E

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PACKAGE DIMENSIONS

MINI MOSORB

CASE 59–10

ISSUE S

ADIM MIN MAX MIN MAX

MILLIMETERSINCHES

A4.10 5.200.161 0.205

B2.00 2.700.079 0.106

D0.71 0.860.028 0.034

F--- 1.27--- 0.050

K25.40 ---1.000 ---

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 59-04 OBSOLETE, NEW STANDARD 59-09.

4. 59-03 OBSOLETE, NEW STANDARD 59-10.

5. ALL RULES AND NOTES ASSOCIATED WITH

JEDEC DO-41 OUTLINE SHALL APPLY

6. POLARITY DENOTED BY CATHODE BAND.

7. LEAD DIAMETER NOT CONTROLLED WITHIN F

DIMENSION.

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Notes

MUR180E, MUR1100E

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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

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liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

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PUBLICATION ORDERING INFORMATION

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2–9–1 Kamimeguro, Meguro–ku, Tokyo, Japan 153–0051

Phone: 81–3–5773–3850

Email: r14525@onsemi.com

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For additional information, please contact your local

Sales Representative.

MUR180E/D

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.

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