2SK4042
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK4042
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.7 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 500 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V
Gate-source voltage VGSS ±30 V
DC (Note 1) ID 8
Drain current Pulse (t = 1 ms)
(Note 1)
IDP 32
A
Drain power dissipation (Tc = 25°C) PD 40 W
Single pulse avalanche energy
(Note 2)
EAS 312 mJ
Avalanche current IAR 8 A
Repetitive avalanche energy (Note 3) EAR 4 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and
Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 8.3 mH, IAR = 8 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC ―
JEITA SC-67
TOSHIBA 2-10U1B
Weight : 1.7 g (typ.)
1
3
2
2SK4042
2009-09-29
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Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA
Gate-source breakdown voltage V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V
Drain cut-off current IDSS V
DS = 500 V, VGS = 0 V ⎯ ⎯ 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V
Drain-source ON resistance RDS (ON) V
GS = 10 V, ID = 4 A ⎯ 0.70 0.97 Ω
Forward transfer admittance ⎪Yfs⎪ V
DS = 10 V, ID = 4 A 3.0 6.5 ⎯ S
Input capacitance Ciss ⎯ 1050 ⎯
Reverse transfer capacitance Crss ⎯ 10 ⎯
Output capacitance Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
⎯ 110 ⎯
pF
Rise time tr ⎯ 26 ⎯
Turn-on time ton ⎯ 45 ⎯
Fall time tf ⎯ 38 ⎯
Switching time
Turn-off time toff
⎯ 130 ⎯
ns
Total gate charge Qg ⎯ 28 ⎯
Gate-source charge Qgs ⎯ 16 ⎯
Gate-drain charge Qgd
VDD
∼
−
400 V, VGS = 10 V, ID = 8 A
⎯ 12 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
IDR ⎯ ⎯ ⎯ 8 A
Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 32 A
Forward voltage (diode) VDSF I
DR = 8 A, VGS = 0 V ⎯ ⎯ −1.7
V
Reverse recovery time trr ⎯ 190 ⎯ ns
Reverse recovery charge Qrr
IDR = 8 A, VGS = 0 V,
dIDR/dt = 100 A/μs ⎯ 0.5 ⎯ μC
Marking
RL =
50 Ω
0 V
10 V
VGS
VDD
∼
−
200 V
ID = 4 A VOUT
50 Ω
Duty ≤ 1%, tw = 10 μs
Lot No.
Note 4
K4042
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
2SK4042
2009-09-29
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0
8
16
20
010 20 30
12
4
50
V
15 8
7.5
6
6.5
7
5.5
40
⎪Yfs⎪ – ID
GATE-SOURCE VOLTAGE VGS (V)
ID – VGS
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
VDS – VGS
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
⎪Yfs⎪ (S)
DRAIN-SOURCE VOLTAGE VDS (V)
ID – VDS
DRAIN CURRENT ID (A)
DRAIN-SOURCE VOLTAGE VDS (V)
ID – VDS
DRAIN CURRENT ID (A)
RDS (ON) – ID
DRAIN CURRENT ID (A)
DRAIN-SOURCE ON RESISTANCE
RDS (ON) (Ω)
COMMON SOURCE
Tc = 25°C
PULSE TEST
0
0
4
8
10
2 4 6
VGS = 5V
COMMON SOURCE
Tc = 25°C
PULSE TEST
5.5
6
6
2
8 10
15
7
8
6.5
Tc = −55°C
0
0
10
20
4 8
2 6 10
25
100
COMMON SOURCE
VDS = 20V
PULSE TEST
5
15
25
0
0
6
8
20
COMMON SOURCE
Tc = 25°C
PULSE TEST
15
4
4
10
510
ID = 8A
2
2
0.1
0.1
1
10
110
COMMON SOURCE
Tc = 25°C
PULSE TEST
VGS = 10 ,15V
12
100
10
0.1 1 100
COMMON SOURCE
VDS = 20 V
PULSE TEST
25
100
Tc = −55°C
10
1
0.1
2SK4042
2009-09-29
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DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE – VDS
CAPACITANCE C (pF)
COMMON SOURCE
VGS = 0 V
f = 1 MHz
Tc = 25°C
1
0.1
10
100
1000
10000
1 10 100
Ciss
Coss
Crss
CASE TEMPERATURE Tc (°C)
DRAIN-SOURCE ON RESISTANCE
RDS (ON) ( Ω)
DRAIN POWER DISSIPATION
PD (W)
CASE TEMPERATURE Tc (°C)
PD – Tc
IDR – VDS
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN REVERSE CURRENT
IDR (A)
COMMON SOURCE
Tc = 25°C
PULSE TEST
0
0.1 −0.2
1
10
100
−0.4 −0.6 −0.8
VGS = 0, −1 V
10
3
1
5
−1.0 −1.2
TOTAL GATE CHARGE Qg (nC)
GATE-SOURCE VOLTAGE VGS(V)
DYNAMIC INPUT / OUTPUT
CHARACTERISTICS
DRAIN-SOURCE VOLTAGE VDS (V)
COMMON SOURCE
ID = 8 A
Tc = 25°C
PULSE TEST
0 10 20
VDD = 100 V
VDS
VGS
400
200
30 50
40
500
400
300
200
100
0
20
16
12
8
4
0
Vth – Tc
GATE THRESHOLD VOLTAGE
Vth (V)
CASE TEMPERATURE Tc (°C)
0
1
2
3
5
−80 −40 0 40 80 120 160
4
COMMON SOURCE
VDS = 10 V
ID = 1 mA
PULSE TEST
0
−80 −40 0 40 80 120 160
0.4
0.8
1.2
1.6
2
COMMON SOURCE
VGS = 10 V
PULSE TEST
2
ID = 8A
4
50
0
0 40 80 120 160
20
30
40
10
RDS(ON) – TC
2SK4042
2009-09-29
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CHANNEL TEMPERATURE (INITIAL)
Tch (°C)
EAS – Tch
AVALANCHE ENERGY
EAS (mJ)
rth – tw
PULSE WIDTH tw (s)
0.01
10μ
0.1
1
10
100μ 1m 10m 100m 1 10
T
PDM
t
Duty = t/T
Rth (ch-c) = 3.125°C/W
Duty=0.5
0.2
0.1
0.05
0.02
0.01
0.001
NORMALIZED TRANSIENT THERMAL
IMPEDANCE rth (t)/Rth (ch-c)
SINGLE PULSE
−15 V
15 V
TEST CIRCUIT WAVE FORM
IAR
BVDSS
VDD V
DS
RG = 25 Ω
VDD = 90 V, L = 8.3mH ⎟
⎟
⎠
⎞
⎜
⎜
⎝
⎛
−
⋅⋅⋅= VDD
BVDSS
BVDSS
2
IL
2
1
ΕAS
500
400
300
200
100
0
25 50 75 100 125 150
0.01
1
0.1
1
10
100
10 1000100
100 μs *
1 ms *
VDSS max
DRAIN-SOURCE VOLTAGE VDS (V)
SAFE OPERATING AREA
※ SINGLE NONREPETITIVE PULSE
Tc= 2 5 ℃
CURVES MUST BE DERATED
LINEARLY WITH INCREASE IN
TEMPERATURE.
ID max (PULSED) *
ID max (CONTINUOUS) *
DRAIN CURRENT ID (A)
DC OPERATION
Tc = 25°C
2SK4042
2009-09-29
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in this document, and related hardware, software and systems (collectively “Product”) without notice.
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
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also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
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• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
