DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 FEATURES DESCRIPTION * Low switching losses The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. * Fast recovery time * Guard ring protected * Hermetically sealed leaded glass package. (1) Implotec is a trademark of Philips. APPLICATIONS * Low power, switched-mode power supplies * Rectifying * Polarity protection. 1996 May 03 k handbook, 4 columns a MAM218 Fig.1 Simplified outline (SOD81) and symbol. 2 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR VRSM VRRM VRWM PARAMETER CONDITIONS MIN. MAX. UNIT continuous reverse voltage 1N5817 - 20 V 1N5818 - 30 V 1N5819 - 40 V 1N5817 - 24 V 1N5818 - 36 V 1N5819 - 48 V 1N5817 - 20 V 1N5818 - 30 V 1N5819 - 40 V 1N5817 - 20 V 1N5818 - 30 V 1N5819 - 40 V non-repetitive peak reverse voltage repetitive peak reverse voltage crest working reverse voltage IF(AV) average forward current Tamb = 55 C; Rth j-a = 100 K/W; note 1; VR(equiv) = 0.2 V; note 2 - 1 A IFSM non-repetitive peak forward current t = 8.3 ms half sine wave; JEDEC method; Tj = Tj max prior to surge: VR = 0 - 25 A Tstg storage temperature -65 +175 C Tj junction temperature - 125 C Notes 1. Refer to SOD81 standard mounting conditions. 2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and IF(AV) rating will be available on request. 1996 May 03 3 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 ELECTRICAL CHARACTERISTICS Tamb = 25 C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage Cd MAX. UNIT see Fig.2 - 320 mV IF = 1 A - - 450 mV IF = 3 A - - 750 mV IF = 0.1 A - - 330 mV IF = 1 A - - 550 mV IF = 3 A - - 875 mV IF = 0.1 A - - 340 mV IF = 1 A - - 600 mV IF = 3 A - - 900 mV VR = VRRMmax; note 1 - - 1 mA VR = VRRMmax; Tj = 100 C - - 10 mA 1N5817 - 80 - pF 1N5818 - 50 - pF 1N5819 - 50 - pF forward voltage forward voltage 1N5819 IR TYP. - 1N5818 VF MIN. IF = 0.1 A 1N5817 VF CONDITIONS reverse current diode capacitance see Fig.2 see Fig.2 VR = 4 V; f = 1 MHz Note 1. Pulsed test: tp = 300 s; = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Refer to SOD81 standard mounting conditions. 1996 May 03 4 VALUE UNIT 100 K/W Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 GRAPHICAL DATA MBE634 5 handbook, halfpage IF (A) Tj = 125 oC 4 25 oC 3 2 1 0 0 0.5 VF (V) 1 Fig.2 Typical forward voltage. MBE642 1 a=3 2.5 2 1.57 1.42 1 PF(AV) (W) 0.5 0 0 Fig.3 1 0.5 1.5 IF(AV) (A) 2 1N817. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 1996 May 03 5 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 MBE641 1 a=3 2.5 2 1.57 1.42 1 PF(AV) (W) 0.5 0 0 Fig.4 1 0.5 1.5 IF(AV) (A) 2 1N5818. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). MBE643 1 a=3 2.5 2 1.57 1.42 1 PF(AV) (W) 0.5 0 0 Fig.5 1 0.5 1.5 IF(AV) (A) 2 1N5819. Maximum values steady state forward power dissipation as a function of the average forward current; a = IF(RMS)/IF(AV). 1996 May 03 6 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 MBG434 200 MBG435 0.20 handbook, halfpage handbook, halfpage Tj (oC) PR (W) VRWM 150 0.15 = 0.2 100 VRWM = 0.5 = 0.2 0.10 VRWM VR = 0.5 50 0.05 0 0 0 Fig.6 VRWM VR 10 20 VR (V) 0 1N5817. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. Fig.7 MBG432 200 10 1N5817. Reverse power dissipation as a function of reverse voltage (max. values); Rth j-a = 100 K/W. MBG437 0.20 handbook, halfpage 20 VR (V) handbook, halfpage PR (W) Tj oC) ( 150 VR 0.15 VRWM VRWM = 0.5 VRWM = 0.2 = 0.2 100 VR 0.10 VRWM = 0.5 50 0.05 0 0 0 Fig.8 10 20 VR (V) 30 0 1N5818. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. 1996 May 03 Fig.9 7 10 20 VR (V) 30 1N5818. Reverse power dissipation as a function of reverse voltage (max. values); Rth j-a = 100 K/W. Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 MBG433 200 MBG436 0.20 handbook, halfpage handbook, halfpage PR (W) Tj (oC) 150 VRWM VR 0.15 VRWM VRWM = 0.5 = 0.2 = 0.2 100 0.10 VR VRWM = 0.5 50 0.05 0 0 0 10 20 30 V (V) 40 R 0 Fig.10 1N5819. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. 1996 May 03 10 20 30 V (V) 40 R Fig.11 1N5819. Reverse power dissipation as a function of reverse voltage (max. values); Rth j-a = 100 K/W. 8 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 PACKAGE OUTLINE 5 max handbook, full pagewidth 0.81 max 2.15 max 28 min 3.8 max 28 min MBC051 Dimensions in mm. Fig.12 SOD81. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 May 03 9