DATA SH EET
Product specification
Supersedes data of April 1992 1996 May 03
DISCRETE SEMICONDUCTORS
1N5817; 1N5818; 1N5819
Schottky barrier diodes
f
page
M3D119
1996 May 03 2
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
FEATURES
•Low switching losses
•Fast recovery time
•Guard ring protected
•Hermetically sealed leaded glass
package.
APPLICATIONS
•Low power, switched-mode power
supplies
•Rectifying
•Polarity protection.
DESCRIPTION
The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar
technology, and encapsulated in SOD81 hermetically sealed glass packages
incorporating ImplotecTM(1) technology.
(1) Implotec is a trademark of Philips.
Fig.1 Simplified outline (SOD81) and symbol.
handbook, 4 columns
ak
MAM218
1996 May 03 3
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Refer to SOD81 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses
PR and IF(AV) rating will be available on request.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VRcontinuous reverse voltage
1N5817 −20 V
1N5818 −30 V
1N5819 −40 V
VRSM non-repetitive peak reverse voltage
1N5817 −24 V
1N5818 −36 V
1N5819 −48 V
VRRM repetitive peak reverse voltage
1N5817 −20 V
1N5818 −30 V
1N5819 −40 V
VRWM crest working reverse voltage
1N5817 −20 V
1N5818 −30 V
1N5819 −40 V
IF(AV) average forward current Tamb =55°C; Rth j-a = 100 K/W;
note 1; VR(equiv) = 0.2 V; note 2 −1A
I
FSM non-repetitive peak forward current t = 8.3 ms half sine wave;
JEDEC method;
Tj=T
j max prior to surge: VR=0
−25 A
Tstg storage temperature −65 +175 °C
Tjjunction temperature −125 °C
1996 May 03 4
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
ELECTRICAL CHARACTERISTICS
Tamb =25°C; unless otherwise specified.
Note
1. Pulsed test: tp= 300 µs; δ= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD81 standard mounting conditions.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VFforward voltage see Fig.2
1N5817 IF= 0.1 A −−320 mV
IF=1A −−450 mV
IF=3A −−750 mV
VFforward voltage see Fig.2
1N5818 IF= 0.1 A −−330 mV
IF=1A −−550 mV
IF=3A −−875 mV
VFforward voltage see Fig.2
1N5819 IF= 0.1 A −−340 mV
IF=1A −−600 mV
IF=3A −−900 mV
IRreverse current VR=V
RRMmax; note 1 −−1mA
VR=V
RRMmax; Tj= 100 °C−−10 mA
Cddiode capacitance VR= 4 V; f = 1 MHz
1N5817 −80 −pF
1N5818 −50 −pF
1N5819 −50 −pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 100 K/W
1996 May 03 5
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
GRAPHICAL DATA
handbook, halfpage
01
5
0
1
MBE634
2
3
4
0.5 VF (V)
IF
(A) Tj = 125 oC25 oC
Fig.2 Typical forward voltage.
Fig.3 1N817. Maximum values steady state forward power dissipation as a function of the average forward
current; a = IF(RMS)/IF(AV).
2
1
00 0.5 1.5
MBE642
1
(W)
0.5
PF(AV)
IF(AV) (A)
a = 3 2.5 1.57 1.42 1
2
1996 May 03 6
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
Fig.4 1N5818. Maximum values steady state forward power dissipation as a function of the average forward
current; a = IF(RMS)/IF(AV).
2
1
00 0.5 1.5
MBE641
1
(W)
0.5
PF(AV)
IF(AV) (A)
a = 3 2.5 1.57 1.42 12
Fig.5 1N5819. Maximum values steady state forward power dissipation as a function of the average forward
current; a = IF(RMS)/IF(AV).
2
1
00 0.5 1.5
MBE643
1
(W)
0.5
PF(AV)
IF(AV) (A)
a = 3 2.5 1.57 1.42 12
1996 May 03 7
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
Fig.6 1N5817. Maximum permissible junction
temperature as a function of reverse voltage;
Rth j-a = 100 K/W.
handbook, halfpage
020
200
150
50
0
100
MBG434
10 VR (V)
Tj
(oC) VRWM
δ = 0.2
VRVRWM
δ = 0.5
Fig.7 1N5817. Reverse power dissipation as a
function of reverse voltage (max. values);
Rth j-a = 100 K/W.
handbook, halfpage
020
0.20
0.15
0.05
0
0.10
MBG435
10 VR (V)
PR
(W) VRWM
δ = 0.2
VR
VRWM
δ = 0.5
Fig.8 1N5818. Maximum permissible junction
temperature as a function of reverse voltage;
Rth j-a = 100 K/W.
handbook, halfpage
0102030
200
150
50
0
100
MBG432
VR (V)
Tj
(oC)
VRWM
δ = 0.2
VRVRWM
δ = 0.5
Fig.9 1N5818. Reverse power dissipation as a
function of reverse voltage (max. values);
Rth j-a = 100 K/W.
handbook, halfpage
0
0.20
0.15
0.05
0
0.10
MBG437
20 3010 VR (V)
PR
(W) VRWM
δ = 0.2
VRVRWM
δ = 0.5
1996 May 03 8
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
Fig.10 1N5819. Maximum permissible junction
temperature as a function of reverse voltage;
Rth j-a = 100 K/W.
handbook, halfpage
01020 40
200
150
50
0
100
MBG433
30 VR (V)
Tj
(oC)
VRWM
δ = 0.2
VRVRWM
δ = 0.5
Fig.11 1N5819. Reverse power dissipation as a
function of reverse voltage (max. values);
Rth j-a = 100 K/W.
handbook, halfpage
040
0.20
0.15
0.05
0
0.10
MBG436
20 3010 VR (V)
PR
(W) VRWM
δ = 0.2
VR
VRWM
δ = 0.5
1996 May 03 9
Philips Semiconductors Product specification
Schottky barrier diodes 1N5817; 1N5818; 1N5819
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Dimensions in mm.
Fig.12 SOD81.
handbook, full pagewidth
MBC051
5 max
3.8 max28 min 28 min
0.81
max
2.15
max
