VN2222LL N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS(ON) (max) ID(ON) (min) 60V 7.5 0.75A Order Number / Package TO-92 VN2222LL Features Advanced DMOS Technology Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. High input impedance and high gain Complementary N- and P-channel devices Applications Motor controls Package Option Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Gate-to-Source Voltage 30V Operating and Storage Temperature Soldering Temperature* SGD TO-92 -55C to +150C 300C * Distance of 1.6 mm from case for 10 seconds. Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VN2222LL Thermal Characteristics Package ID (continuous)* TO-92 ID (pulsed) 0.23A Power Dissipation @ TC = 25C jc ja C/W C/W 1W 125 170 1.0A IDR* IDRM 0.23A 1.0A * ID (continuous) is limited by max rated Tj. Electrical Characteristics (@ 25C unless otherwise specified) Symbol Parameter Min BVDSS Drain-to-Source Breakdown Voltage 60 VGS(th) Gate Threshold Voltage 0.6 IGSS IDSS Typ Max Unit Conditions V VGS = 0V, ID= 100A 2.5 V VGS = VDS, ID = 1mA Gate Body Leakage 100 nA VGS = 20V, VDS = 0V Zero Gate Voltage Drain Current 10 VGS = 0V, VDS = Max Rating A VGS = 0V, VDS = 48V TA = 125C A VGS = 10V, VDS = 10V 7.5 VGS = 5V, ID = 0.2A 7.5 VGS = 10V, ID = 0.5A 500 ON-State Drain Current 0.75 RDS(ON) Static Drain-to-Source ON-State Resistance GFS Forward Transconductance 100 CISS Input Capacitance 60 COSS Common Source Output Capacitance 25 CRSS Reverse Transfer Capacitance 8 t(ON) Turn-ON Time 10 t(OFF) Turn-OFF Time 10 VSD Diode Forward Voltage Drop ID(ON) VDS = 10V, ID = 0.5A pF VGS = 0V, VDS = 25V f = 1 MHz ns VDD = 15V, ID = 0.6A RGEN = 25 V VGS = 0V, ISD = 0.2A m 0.85 Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit VDD RL 10V 90% PULSE GENERATOR INPUT 0V 10% t(ON) td(ON) t(OFF) tr td(OFF) OUTPUT Rgen tF D.U.T. VDD 10% INPUT 10% OUTPUT 0V 90% 90% 11/12/01 (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 2 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com