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11/12/01
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
VN2222LL
BVDSS /R
DS(ON) ID(ON)
BVDGS (max) (min) TO-92
60V 7.5Ω0.75A VN2222LL
Ordering Information
Order Number / Package
N-Channel Enhancement-Mode
Vertical DMOS FETs
Package Option
Note: See Package Outline section for dimensions.
TO-92
Features
❏Free from secondary breakdown
❏Low power drive requirement
❏Ease of paralleling
❏Low CISS and fast switching speeds
❏Excellent thermal stability
❏Integral Source-Drain diode
❏High input impedance and high gain
❏Complementary N- and P-channel devices
Applications
❏Motor controls
❏Converters
❏Amplifiers
❏Switches
❏Power supply circuits
❏Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
Drain-to-Gate Voltage BVDGS
Gate-to-Source Voltage ± 30V
Operating and Storage Temperature -55°C to +150°C
Soldering Temperature* 300°C
* Distance of 1.6 mm from case for 10 seconds.
S G D
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1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895
www.supertex.com
11/12/01
©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited.
Thermal Characteristics
VN2222LL
Electrical Characteristics (@ 25°C unless otherwise specified)
Symbol Parameter Min Typ Max Unit Conditions
BVDSS Drain-to-Source Breakdown Voltage 60 V VGS = 0V, ID= 100µA
VGS(th) Gate Threshold Voltage 0.6 2.5 V VGS = VDS, ID = 1mA
IGSS Gate Body Leakage 100 nA VGS = ±20V, VDS = 0V
IDSS Zero Gate Voltage Drain Current 10 VGS = 0V, VDS = Max Rating
500 µAV
GS = 0V, VDS = 48V
TA = 125°C
ID(ON) ON-State Drain Current 0.75 A VGS = 10V, VDS = 10V
RDS(ON) Static Drain-to-Source ON-State Resistance 7.5 ΩVGS = 5V, ID = 0.2A
7.5 ΩVGS = 10V, ID = 0.5A
GFS Forward Transconductance 100 m VDS = 10V, ID = 0.5A
CISS Input Capacitance 60
COSS Common Source Output Capacitance 25 pF
CRSS Reverse Transfer Capacitance 8
t(ON) Turn-ON Time 10
t(OFF) Turn-OFF Time 10
VSD Diode Forward Voltage Drop 0.85 V VGS = 0V, ISD = 0.2A
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
VGS = 0V, VDS = 25V
f = 1 MHz
ns VDD = 15V, ID = 0.6A
RGEN = 25Ω
Switching Waveforms and Test Circuit
90%
10%
90% 90%
10%
10%
PULSE
GENERATOR
V
DD
R
L
OUTPUT
D.U.T.
t
(ON)
t
d(ON)
t
(OFF)
t
d(OFF)
t
F
t
r
INPUT
INPUT
OUTPUT
10V
V
DD
R
gen
0V
0V
Ω
Package ID (continuous)* ID (pulsed) Power Dissipation
θ
jc
θ
ja IDR*I
DRM
@ TC = 25°C°C/W °C/W
TO-92 0.23A 1.0A 1W 125 170 0.23A 1.0A
*ID (continuous) is limited by max rated Tj.
