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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. 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MJD44H11 NPN Epitaxial Silicon Transistor Features * General-Purpose Power and Switching such as Output or Driver Stages in Applications * D-PAK for Surface-Mount Applications * Lead-Formed for Surface Mount Application (No Suffix) * Fast Switching Speeds * Low Collector Emitter Saturation Voltage D-PAK 1 1.Base 2.Collector 3.Emitter Ordering Information Part Number Top Mark Package Packing Method MJD44H11TF MJD44H11 TO-252 3L (DPAK) Tape and Reel MJD44H11TM MJD44H11 TO-252 3L (DPAK) Tape and Reel Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Value Unit VCEO Collector-Emitter Voltage Parameter 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 8 A ICP Collector Current (Pulse) 16 A TJ Junction Temperature 150 C - 65 to +150 C TSTG Storage Temperature Range (c) 2001 Fairchild Semiconductor Corporation MJD44H11 Rev. 1.2 www.fairchildsemi.com 1 MJD44H11 -- NPN Epitaxial Silicon Transistor April 2015 Values are at TA = 25C unless otherwise noted. Symbol PD Parameter Max. Total Device Dissipation TC = 25C 20 TA = 25C 1.75 Unit W RJC Thermal Resistance, Junction-to-Case 6.25 C/W RJA Thermal Resistance, Junction-to-Ambient 71.4 C/W Electrical Characteristics Values are at TA = 25C unless otherwise noted. Symbol VCEO(sus) Parameter Conditions (1) Collector-Emitter Sustaining Voltage IC = 30 mA, IB = 0 Min. Typ. Max. 80 Unit V ICEO Collector Cut-Off Current VCE = 80 V, IB = 0 10 A IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 50 A hFE DC Current Gain(1) (1) VCE = 1 V, IC = 2 A 60 VCE = 1 V, IC = 4 A 40 VCE(sat) Collector-Emitter Saturation Voltage IC = 8 A, IB = 0.4 A 1 V VBE(sat) Base-Emitter Saturation Voltage(1) IC = 8 A, IB = 0.8 A 1.5 V Current Gain Bandwidth Product VCE = 10 V, IC = 0.5 A Cob Output Capacitance VCB = 10 V, f = 1 MHz tON Turn-On Time tSTG Storage Time fT tF Fall Time IC = 5 A, IB1 = - IB2 = 0.5 A 50 MHz 130 pF 300 ns 500 ns 140 ns Note: 1. Pulse test: pulse width 300 s, duty cycle 2%. (c) 2001 Fairchild Semiconductor Corporation MJD44H11 Rev. 1.2 www.fairchildsemi.com 2 MJD44H11 -- NPN Epitaxial Silicon Transistor Thermal Characteristics 100 1000 IC[A], COLLECTOR CURRENT hFE, DC CURRENT GAIN VCE = 1V 100 10 ICP(max) 10 0 s 50 0 s 10 IC(max) 1m s 5m s DC 1 0.1 0.01 1 0.01 0.1 1 1 10 IC[A], COLLECTOR CURRENT 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. DC Current Gain Figure 2. Safe Operating Area PC[W], POWER DISSIPATION 25 20 15 10 5 0 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 3. Power Derating (c) 2001 Fairchild Semiconductor Corporation MJD44H11 Rev. 1.2 www.fairchildsemi.com 3 MJD44H11 -- NPN Epitaxial Silicon Transistor Typical Performance Characteristics MJD44H11 -- NPN Epitaxial Silicon Transistor Physical Dimensions ) $ 0,1 ) 0,1 ) & 0,1 0$; 0,1 /$1'3$77(515(&200(1'$7,21 ) % ) ) 0,1 ) 6(('(7$,/$ % ) *$*(3/$1( ) 127(681/(6627+(5:,6(63(&,),(' $ 127&203/,$1772-('(&729$5,$7,21$% 0$; % $//',0(16,21$5(,10,//,0(7(5 & ',0(16,216$5((;&/86,9(2)%855602/')/$6+ 6($7,1*3/$1( $1'7,(%$5(;7586,216 ' /$'3$77(513(5,3&$$7$1'$5' 723;1 ( '5$:,1*),/(1$0(0.772'5(9 ) '2(6127&203/<-('(&67$1'$5'9$/8( * )$,5&+,/'6(0,&21'8&725 '(7$,/$ 6&$/( 0,1 ) Figure 4. 3-LEAD, TO-252, NOT COMPLIANT TO JEDEC TO-252 VAR. AB, SURFACE MOUNT (DPAK) (c) 2001 Fairchild Semiconductor Corporation MJD44H11 Rev. 1.2 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS FRFET(R) SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiT OPTOLOGIC(R) AccuPower AttitudeEngineTM Awinda(R) AX-CAP(R)* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC (R) (R) Fairchild Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FAST(R) FastvCore FETBench FPS OPTOPLANAR(R) (R) Power Supply WebDesigner PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START Solutions for Your Success SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET Sync-LockTM (R)* (R) TinyBoost TinyBuck(R) TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT(R)* SerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM XsensTM TM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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