BC856BLT1 - Leshan Radio Company Co., Ltd.

LESHAN RADIO COMPANY, LTD.

M5–1/5

General Purpose T ransistors

PNP Silicon

MAXIMUM RATINGS

Rating Symbol BC856 BC857 BC858 Unit

Collector–Emitter V oltage V CEO –65 –45 –30 V

Collector–Base V oltage V CBO –80 –50 –30 V

Emitter–Base V oltage V EBO –5.0 –5.0 –5.0 V

Collector Current — Continuous I C–100 –100 –100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR– 5 Board, (1) P D

TA = 25°C 225 mW

Derate above 25°C 1.8 mW/°C

Thermal Resistance, Junction to Ambient R θJA 556 °C/W

Total Device Dissipation P D

Alumina Substrate, (2) T A = 25°C 300 mW

Derate above 25°C 2.4 mW/°C

Thermal Resistance, Junction to Ambient R θJA 417 °C/W

Junction and Storage Temperature T J , T stg –55 to +150 °C

DEVICE MARKING

BC856ALT1 = 3A; BC856BLT1 = 3B; BC857ALT1 = 3E; BC857BLT1 = 3F;

BC858ALT1 = 3J; BC858BLT1 = 3K; BC858CLT1 = 3L

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown V oltage

BC856 Series – 65 — —

(IC = –10 mA) BC857 Series V (BR)CEO – 45 — — v

BC858 Series – 30 — —

Collector–Emitter Breakdown V oltage

BC856 Series – 80 — —

(IC = –10 µA, VEB = 0) BC857 Series V (BR)CES – 50 — — v

BC858 Series – 30 — —

Collector–Base Breakdown V oltage BC856 Series – 80 — —

(IC = – 10 µA) BC857 Series V (BR)CBO – 50 — — v

BC858 Series – 30 — —

Emitter–Base Breakdown Voltage BC856 Series – 5.0 — —

(IE = – 1.0 µA) BC857 Series, V (BR)EBO – 5.0 — — v

BC858 Series – 5.0 — —

Collector Cutoff Current (VCB = – 30 V) I CBO — — – 15 nA

(VCB = – 30 V, TA = 150°C) — — – 4.0 µA

BC856ALT1, BLT1

BC857ALT1, BLT1

BC858ALT1, BLT1

CLT1

EMITTER

COLLECTOR

BASE

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

1.FR–5=1.0 x 0.75 x 0.062in

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

LESHAN RADIO COMPANY, LTD.

M5–2/5

BC856ALT1, BLT1 BC857ALT1, BL T1 BC858ALT1, BLT1, CL T 1

ELECTRICAL CHARACTERISTICS(TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Typ Max Unit

ON CHARACTERISTICS

DC Current Gain

BC856A, BC857A, BC858A

h FE —90——

= –10 µA, V

= –5.0 V) BC856B, BC857B, BC858B

— 150 —

BC858C,

— 270 —

= –2.0 mA, V

= –5.0 V) BC856A, BC857A, BC858A

125 180 250

BC856B, BC857B, BC858B

220 290 475

BC858C

420 520 800

Collector–Emitter Saturation Voltage (I C = –10 mA, I B = – 0.5 mA) V CE(sat) — — – 0.3 V

Collector–Emitter Saturation Voltage (I C = –100 mA, I B = – 5.0 mA) — — – 0.65

Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA) V BE(sat) — – 0.7 — V

Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA) — – 0.9 —

Base–Emitter on Voltage (I C = –2.0 mA, V CE = –5.0 V) V BE(on) – 0.6 — – 0.75 V

Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V) — — – 0.82

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product f T100 — — MHz

(I C = – 10 mA, V CE = – 5.0 Vdc, f = 100 MHz)

Output Capacitance (V CB = – 10 V, f = 1.0 MHz) C ob — — 4.5 pF

Noise Figure NF –– –– 10 dB

(I C= – 0.2 mA,V CE= – 5.0 Vdc, R S= 2.0 kΩ, f =1.0 kHz, BW= 200 Hz)

LESHAN RADIO COMPANY, LTD.

M5–3/5

BC856ALT1, BLT1 BC857ALT1, BL T1, BC858ALT1, BL T1, CLT1

BC857/BC858

I C , COLLECTOR CURRENT (mAdc)

Figure 1. Normalized DC Current Gain I C , COLLECTOR CURRENT (mAdc)

Figure 2. “Saturation” and “On” V oltages

–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200

VCE= –10 V

T A = 25°C

2.0

1.5

1.0

0.7

0.5

0.3

0.2

–0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100

T A = 25°C V BE(sat) @ I C /I B=10

V BE(on) @ V CE = –10 V

V CE(sat) @ I C /I B = 10

T A = 25°C

V, VOLTAGE (VOLTS)

–1.0

–0.9

–0.8

–0.7

–0.6

–0.5

–0.4

–0.3

–0.2

–0.1

θθ

θVB , TEMPERATURE COEFFICIENT (mV/ °C)

1.0

1.2

1.6

2.0

2.4

2.8

I B , BASE CURRENT (mA)

Figure 3. Collector Saturation Region

VCE, COLLECTOR– EMITTER VOLTAGE (V)

I C= –200 mA

–55°C to +125°C

I C , COLLECTOR CURRENT (mA)

Figure 4. Base–Emitter Temperature Coefficient

–0.2 –1.0 –10 –100

–0.02 –0.1 –1.0 –10 –20

–2.0

–1.6

–1.2

–0.8

–0.4

I C =

–10 mA

I C= –100 mA

I C= –

20 mA

I C= –50 mA

hFE, NORMALIZED DC CURRENT GAIN

V R , REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitances

I C , COLLECTOR CURRENT (mAdc)

Figure 6. Current–Gain – Bandwidth Product

T A=25°C V CE =–10V

T A = 25°C

, CURRENT– GAIN – BANDWIDTH

PRODUCT (MHz)

V, VOLTAGE (VOLTS)

C ob

C ib

400

300

200

100

10.0

7.0

5.0

3.0

2.0

1.0

–0.4 –0.6 –1.0 –2.0 –4.0 –6.0 –10 –20 –30 –40 –0.5 –1.0 –2.0 –3.0 –5.0 –10 –20 –30 –50

LESHAN RADIO COMPANY, LTD.

M5–4/5

BC856ALT1, BLT1 BC857ALT1, BL T1, BC858ALT1, BL T1, CLT1

BC856

I C , COLLECTOR CURRENT (mA)

Figure 7. DC Current Gain I C , COLLECTOR CURRENT (mA)

Figure 8. “On” Voltage

I B , BASE CURRENT (mA)

Figure 9. Collector Saturation Region I C , COLLECTOR CURRENT (mA)

Figure 10. Base–Emitter Temperature Coefficient

VBE(sat) @ I C/I B= 10

VBE @VCE= –5.0 V

T J= 25°C

V CE = –5.0V

T A = 25°C

VCE(sat) @ I C /I B= 10

V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)

θθ

θVB , TEMPERATURE COEFFICIENT (mV/°C) V, VOLTAGE (VOLTS)

I C =

–10 mA –100mA

–20mA –200mA

TJ= 25°C

θ VB for V BE

–55°C to 125°C

–1.0

–1.4

–1.8

–2.2

–2.6

–3.0

–1.0

–0.8

–0.6

–0.4

–0.2

2.0

1.0

0.5

0.2

–2.0

–1.6

–1.2

–0.8

–0.4

–0.1–0.2 –1.0–2.0 –5.0–10–20 –50–100–200 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200

–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200

–0.02 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 –10 –20

hFE , DC CURRENT GAIN (NORMALIZED)

–50mA

V R , REVERSE VOLTAGE (VOLTS)

Figure 11. Capacitance I C , COLLECTOR CURRENT (mA)

Figure 12. Current–Gain – Bandwidth Product

C, CAPACITANCE (pF)

, CURRENT– GAIN – BANDWIDTH PRODUCT T

C ob

C ib

T J= 25°C VCE= –5.0 V

–0.1–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –1.0 –10 –100

8.0

6.0

4.0

2.0

500

200

100

LESHAN RADIO COMPANY, LTD.

M5–5/5

BC856ALT1, BLT1 BC857AL T1, BLT1, BC858ALT1, BL T1, CLT1

t, TIME (ms)

Figure 13. Thermal Response

V CE , COLLECT OR–EMITTER VOLTAGE (V)

Figure 14. Active Region Safe Operating Area

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

The safe operating area curves indicate I C –V CE limits of the

transistor that must be observed for reliable operation. Collector

load lines for specific circuits must fall below the limits indicated by

the applicable curve.

The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A

is variable depending upon conditions. Pulse curves are valid for

duty cycles to 10% provided T J(pk)

150°C. T J(pk) may be calcu-

lated from the data in Figure 13. At high case or ambient

temperatures, thermal limitations will reduce the power that can

be handled to values less than the limitations imposed by the sec-

ondary breakdown.

BC558

BC557

BC556

Z θJC (t) = r(t) R θJC

R θJC = 83.3°C/W MAX

Z θJA (t) = r(t) R θJA

R θJA = 200°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t 1

T J(pk) – T C = P (pk) R θJC (t)

I C , COLLECTOR CURRENT (mA) r( t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

DUTY CYCLE, D = t 1 /t 2

t 1

t 2

P(pk)

SINGLE PULSE

TA= 25°C TJ= 25°C

3 ms1s

1.0

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

D=0.5

0.2

0.1 0.05

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k

–1.0 –0.5 –10 –30 –45 –65–100

–200

–100

–50

–10

–5.0

–2.0