technologies FEATURES Dual Version of SFH610 Series High Current Transfer Ratios ILD610-1, 40-80% ILD610-2, 63-125% ILD610-3, 100-200% ILD610-4, 160-320% Isolation Test Voltage, 5300 Vans Vcesat 0-25 (0.4) V at Ip=10 mA, fp=2.5 MA . Veeo=/70 Vv * Underwriters Lab File #E52744 . VDE #0884 Available with Option 1 DESCRIPTION The |ILD610 Series is a dual channel optocoupler series for high density applications. Each channel consists of an optically coupled pair with a Gallium Arsenide infrared LED and a silicon NPN pho- totransistor. Signal information, including a DC level, can be transmitted by the device while main- taining a high degree of electrical isolation between input and output. The ILD6710 Series is the dual ver- sion of SFH610 Series and uses a repetitive pin-out configuration instead of the more common aiternat- ing pin-out used in most dual couplers. Maximum Ratings (Each Channel) Emitter Reverse Voltage oo... center enee 6.0V Surge Forward Current (t $10 ms) .. Total Power Dissipation ............ Derate Linearly from 25C... DC Forward Current Detector Collector-Emitter Voltage... ec 70V Collector Current.. Collector Current (t <1.0 ms). Total Power Dissipation ......... ... 150 mW Derate Linearly from 25C we: 2.0 mW/PC Package Isolation Test Voltage (t=1.0 sec.) 0.0... 5300 Vams Isolation Resistance Vin=500 V, Tr=25C Vig=500 V, Ta=100C .... Storage Ternperature oo... ee Operating Temperature .. Junction Temperature Lead Soldering Time at 260C ILD610 Dual Phototransistor Dimensions in inches (mm) yy & x Qu pmone ID 4 3 2 1 .255 (6.48) .268 (6.81) | 5 6 7 8 ef fa ed a |. .379 (9.63) 380 (9.91) 030 (0.76 045 (1.14) Optocoupler | | i8| Emitter | 15] Collector 7 | Collector | {6} Emitter : 4 typ" | ee | | 180 (a) ' abs 84) | 050 (1.27 250(6. | (1.27), a! LYLE 110 (2.79) 250(6.35) 020 (51) os 130 (3.30 | 218 (48) 035 (89) sf 3-9 1a | 022 (56) 400 (2.84) typ. peg aaa Electrical Characteristics 7,=25C Symbol 1) Typ. | Unit | Condition L eee ee _ Emitter Forward Voltage lve | 1.25 v | e=60mA | ($1.65) i Reverse Current Ip ' 0.01 (S10) | "Vp=6.0V | Capacitance Co 1 25 DF | | Va=0V | f=1.0 MHz Detector | Breakdown Voltage Io=10 mA | | 1e=10 pA ae od | Collector- Emitter Dark | Voe=t0V Current Capacitance CoE Vog=5.0V | | | f=1.0 MHz | 1 a | F Package Collector- Emitter Saturation Te=t0 mA i | Voltage | fo=25 mA | Coupling Capacitanc , Coupling Capacitance | __| 2001 Infineon Technologies Corp. Optoelectronics Division San Jose, CA www.infineon.com/opto # 1-888-Infineon (1-888-463-4636) 2-190 March 1, 2000-08 ee 4 3 4 Po po ee jo _ | ee oral fp =10 MA, Vog=5.0V 40-80 63-125 100-200 | 160-320 i* "cr! ipa, OMA, Voe= 5.0 13 min 22min. | gamin.i(it n= CCS _ __| ae Le " Iceo (Vee=10 V) 2.0 (<50) 0 (<50) 6.0 (=100) | 5.0 (<100) i CTR will match within a ratio of 17:4 Switching Characteristics Linear Operation (without saturation) /-=10 MA, Vog=5.0 V, R/=75 Q, oO Turn on time | Fie time en Turn off time Fal time (oat, [fot ff . nn i ef 1 Turn on time fon . ; i eS " Riise time i tr 2.0 t . wo ee ee ee Pe Turn off time i tott | 18 . fen ee ee ef + . Fall time ; i1 jan it | Figure 1. Forward voltage versus forward current 1.4 1.3 a= -65C 1.2 1.1 1.0 0.9 0.8 0.7 Ta = 25C VF - Forward Voltage - V A 1 10 IF - Forward Current - mA 100 Figure 2. Normalized non-saturated and saturated CTR at T,=25C versus LED current 1.5 & r Normalized to: o C Voce =5V, lp =10mA Z L Ta = 25C 8 of ATP | g [ CTRee(sat) Voge = 0.4 V, 3 L 2 0.5 ---_- -- & L ./ NCTR(SAT) 3 C * NCTR 0.0 Ip - LED Current - mA Typical 2 [3 [a | ip = 10 mA 4p=10mA | fp =5.0 mA | _ Poy 4.3 46 {8 0 ius | pL 2.8 3.3 | 4.6 us| ow Se 2.9 3.4 25 lus | a de i 26 34 15 | us a wa Figure 3. Normalized non-saturated and saturated CTR at 7,=50C versus LED current c 15T Normalized to: I 5 [ Voce =5V, ip = 10 mA, Ta = 25C 3 10 t _CTRee(sat) Voe= 0.4 ave |. BTL Tye 50C | E f o L = o5-_ c r . 5 c 4 NCTR(SAT) z [ A : NCTR 0.0 dott 1a visiil Pop dt viii A 1 10 100 Ie - LED Current - mA Figure 4. Normalized non-saturated and saturated CTR at 7,=70C versus LED current 1.5 [ Normalized to: ' L Vce=5V,lp=10mA ' F Ta= 25C 1.0 | _ a [ CTRee(sal) Voce = o4 0.5 NCTR - Normalized CTR / NCTR(SAT) 00 [ | ~NCTR 100 tp - LED Current - mA 2001 Infineon Technologies Corp. Optoelectronics Division * San Jose, CA www. infineon.com/opto * 1-888-Infineon (1-888-463-4636) 2-1 {LD610 91 March 1. 2000-08 Optocouplers Figu re 5. Normalized non-saturated and saturated CTR at T,=85C versus LED current 1.5 T T t Normalized to: | 5 [ Voce = 10V, lp = 10 mA, Ta = 25C 3 sol CTRee(sat) Voce = 0.4 V 2 OL T, = 85C sg L E f{ 3 L 1 0.5 -..._._1 c [ t KE L (| Q [ \S NCTR(SAT) L t NCTR 0.0 pot itt po tii pot ia A 1 10 100 ip - LED Current - mA Figure 6. Collector-emitter current versus temperature and LED current 35 < E 30 2 25 20 a O 15 S & 10 2 3 5 oo 8 0 = 0 10 20 30 40 50 60 (F-LED Current -mA Figure 7. Collector-emitter leakage current versus temperature 5 a 10 404 2 103 & 102 S tot s 0 = 10' 2 401 g 10-2 = -20 0 20 40 60 80 100 Tag - Ambient Temperature - C Figure 8. Propagation delay versus collector load resistor gn r 2 31000) F ty 225C, IF =10mA j 25 > z f Voc =5, Vih =1.5V 1 s 3 100 mit 1 2.0 e 5 E XQ a 7 8 a F 4 = 7 Q 810 bp 15 2 a r 7 a . ro tpLH 7 ' = r 4 a a r = a , 10 d 1 10 100 RL - Collector Load Resistor - KQ2 Figure 9. Switching timing Ip a- {PHL wig-h tr _ Figure 10. Non-saturated switching schematic ~ 7 " | | | Voc=5 V | F=10 KHz DF=50% RL : Ip=10 mA Vv : i Ce Input pe-tan--| je totf- | tdontee | Yodaf-f+a} | Output 2001 Infineon Technologies Corp. Optoelectronics Division * San Jose, CA WA infinon.com/apto * 1-888-Infineon (1-888-463-4636) ILD610 2-192 March 1, 2000-08