1998©
Document No. D16156EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON TRANSISTOR
2SD2403
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SD2403 is a transistor featuring high current
capacitance in small dimension. This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
• High current capacitance
• Low collector saturation voltage
• Complementary transistor with 2SB1572
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Conditions Ratings Unit
Collector to base voltage VCBO 80 V
Collector to emitter voltage VCEO 60 V
Emitter to base voltage VEBO 6.0 V
Collector current (DC) IC(DC) 3.0 A
Collector current (pulse) IC(pulse) PW ≤ 10 ms
duty cycle ≤ 50 %
5.0 A
Base current (DC) IB(DC) 0.2 A
Base current (pulse) IB(pulse) PW ≤ 10 ms
duty cycle ≤ 50 %
0.4 A
Total power dissipation PT16 cm2 × 0.7 mm ceramic board mounted 2.0 W
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Data Sheet D16156EJ2V0DS
2
2SD2403
ELECTRICAL CHARACTERISTICS (Ta = 25°
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector cutoff current I&%2 V&% = 80 V, I( = 0 100 nA
Emitter cutoff current I(%2 V(% = 6.0 V, I& = 0 100 nA
DC current gain h)( V&( = 2.0 V, I& = 0.1 A 80 −
DC current gain h)( V&( = 2.0 V, I& = 1.0 A 100 200 400 −
DC base voltage V%( V&( = 2.0 V, I& = 0.1 A 630 670 730 mV
Collector saturation voltage V&(VDW I& = 2.0 A, I% = 0.1 A 150 300 mV
Collector saturation voltage V&(VDW I& = 3.0 A, I% = 0.15 A 210 500 mV
Base saturation voltage V%(VDW I& = 2.0 A, I% = 0.1 A 0.89 1.2 V
Gain bandwidth product f7V&( = 10 V, I( = −0.3 A 130 MHz
Output capacitance CRE V&% = 10 V, I( = 0, f = 1 MHz 30 pF
Turn-on time tRQ 150 ns
Storage time tVWJ 652 ns
Fall time tI
I& = 1.0 A, V&&= 10 V
I% = −I% = 0.1 A
R/ = 5.0 Ω
40 ns
hFE CLASSIFICATION
Marking GX GY GZ
h)( 100 to 200 160 to 320 200 to 400
Data Sheet D16156EJ2V0DS 3
2SD2403
TYPICAL CHARACTERISTICS (Ta = 25°
°°
°C)
Data Sheet D16156EJ2V0DS
4
2SD2403
Data Sheet D16156EJ2V0DS 5
2SD2403
[MEMO]
2SD2403
M8E 00. 4
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
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