MMBT2907A 60V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data * Epitaxial Planar Die Construction * Case: SOT23 * Ideal for Low Power Amplification and Switching * Case Material: Molded Plastic, "Green" Compound; * Complementary NPN Type: MMBT2222A UL Flammability Classification Rating 94V-0 * Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) * Moisture Sensitivity: Level 1 per J-STD-020 * Halogen and Antimony Free. "Green" Device (Note 3) * Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 * Weight: 0.008 grams (Approximate) * Qualified to AEC-Q101 Standards for High Reliability * PPAP Capable (Note 4) C SOT23 B E Top View Pin-Out Device Symbol Top View Ordering Information (Notes 4 & 5) Product MMBT2907A-7-F MMBT2907A-13-F MMBT2907AQ-7-F Notes: Status Active Active Active Compliance AEC-Q101 AEC-Q101 Automotive Marking K2F K2F K2F Reel Size (inches) 7 13 7 Tape Width (mm) 8 8 8 Quantity Per Reel 3,000 10,000 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen and Antimony free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information K2F Date Code Key Year Code Month Code 2013 A Jan 1 2014 B Feb 2 MMBT2907A Document number: DS30040 Rev. 19 - 2 Mar 3 YM SOT23 2015 C Apr 4 K2F = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: D = 2016) M or M = Month (ex: 9 = September) 2016 D May 5 Jun 6 1 of 7 www.diodes.com 2017 E Jul 7 2018 F 2019 G 2020 H Aug Sep Oct Nov Dec 8 9 O N D April 2016 (c) Diodes Incorporated MMBT2907A Absolute Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Symbol VCBO VCEO VEBO IC ICM IBM Value -60 -60 -6.0 -600 -800 -200 Symbol Value 310 350 403 357 350 -55 to +150 Unit V V V mA mA mA Thermal Characteristics Characteristic Collector Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range (Note 6) (Note 7) (Note 6) (Note 7) (Note 8) PD RJA RJL TJ,TSTG Unit mW C/W C/W C ESD Ratings (Note 9) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C 6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Same as Note 6, except the device is mounted on 15 mm x 15mm 1oz copper. 8. Thermal resistance from junction to solder-point (at the end of the leads). 9. Refer to JEDEC specification JESD22-A114 and JESD22-A115. MMBT2907A Document number: DS30040 Rev. 19 - 2 2 of 7 www.diodes.com April 2016 (c) Diodes Incorporated MMBT2907A 0.4 o Thermal Resistance ( C/W) Max Power Dissipation (W) Thermal Characteristics and Derating Information 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 400 350 300 250 200 150 100 D=0.1 Single Pulse D=0.2 50 0 100 100 1m D=0.05 10m 100m 1 10 100 1k Pulse Width (s) o Temperature ( C) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) D=0.5 10 Single Pulse. TA=25oC 1 0.1 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation MMBT2907A Document number: DS30040 Rev. 19 - 2 3 of 7 www.diodes.com April 2016 (c) Diodes Incorporated MMBT2907A Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 10) Emitter-Base Breakdown Voltage Symbol Min Max Unit BVCBO BVCEO BVEBO -60 -60 -6.0 Collector Cut-Off Current ICBO -10 Collector Cut-Off Current Base Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 10) ICEX IBL IEBO -50 -50 -50 V V V nA A nA nA nA hFE 75 100 100 100 50 300 Collector-Emitter Saturation Voltage VCE(SAT) -0.4 -1.6 V Base-Emitter Saturation Voltage VBE(SAT) -1.3 -2.6 V Cobo Cibo -- 8.0 30 pF pF fT 200 MHz tON tD tR tOFF tS tF 45 10 40 100 80 30 ns ns ns ns ns ns DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time Note: Test Condition IC = -100A, IE = 0 IC = -10mA, IB = 0 IE = -100A, IC = 0 VCB = -50V, IE = 0 VCB = -50V, IE = 0, TA = +125C VCE = -30V, VEB(OFF) = -0.5V VCE = -30V, VEB(OFF) = -0.5V VEB = -6.0V IC = -100A, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -2.0V, f = 1.0MHz, IC = 0 VCE = -20V, IC = -50mA, f = 100MHz VCC = -30V, IC = -150mA, IB1 = -15mA VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA 10. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. MMBT2907A Document number: DS30040 Rev. 19 - 2 4 of 7 www.diodes.com April 2016 (c) Diodes Incorporated MMBT2907A V CE = -5V TA = 150C hFE, DC CURRENT GAIN N I A G T 100 N E R R U C C D , E 10 F h TA = 25C TA = -50C 1 -1 -10 -100 -1,000 IC, COLLECTOR CURRENT (mA) Fig. 1 Typical DC Current Gain vs. Collector Current VBE(ON), BASE-EMITTER SATURATION VOLTAGE (V) )V ( E G A T L O V N O I T A R U T A S R E T T I M E -E S A B , )N 1,000 -1.0 VCE = -5V -0.9 -0.7 -0.6 TA = 25C -0.5 -0.4 TA = 150C -0.3 O (E B -0.2 -0.1 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Fig. 2 Typical Base-Emitter Saturation Voltage vs. Collector Current V 1,000 -0.6 R E T T IM E -R O T C E L L O C , T) VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) -0.5 )V ( E G -0.4 A T L O V -0.3 N O IT A R U -0.2 A T S A ( S E C V -0.1 fT, GAIN-BANDWIDTH PRODUCT (MHz) IC = 10 IB VCE = -5V 100 TA = 150C TA = 25C TA = -50C 0 -1 -10 -1,000 -100 IC, COLLECTOR CURRENT (mA) Fig. 3 Typical Collector-Emitter Saturation Voltage vs. Collector Current 10 1 -1 -100 -10 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Gain-Bandwidth Product vs. Collector Current 35 -1.6 f = 1MHz -1.4 IC = -300mA IC = -10mA 30 IC = -100mA -1.2 IC = -1mA IC = -30mA 25 CAPACITANCE (pF) VCE, COLLECTOR-EMITTER VOLTAGE (V) TA = -50C -0.8 -1.0 -0.8 -0.6 -0.4 Cibo 15 10 Cobo 5 -0.2 0 -0.001 20 0 -0.01 -0.1 -1 -10 -100 IB, BASE CURRENT (mA) Fig. 5 Typical Collector Saturation Region MMBT2907A Document number: DS30040 Rev. 19 - 2 5 of 7 www.diodes.com 0 8 10 12 14 16 18 4 6 VR, REVERSE VOLTAGE (V) Fig. 6 Typical Capacitance Characteristics 2 20 April 2016 (c) Diodes Incorporated MMBT2907A Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7 H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0 8 -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X MMBT2907A Document number: DS30040 Rev. 19 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com April 2016 (c) Diodes Incorporated MMBT2907A IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2016, Diodes Incorporated www.diodes.com MMBT2907A Document number: DS30040 Rev. 19 - 2 7 of 7 www.diodes.com April 2016 (c) Diodes Incorporated