SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs * GOLD METALLIZATION * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION * POUT = 150 W MIN. WITH 14 dB GAIN @ 175 MHz ) s ( ct M174 epoxy sealed DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up to 230 MHz. u d o r P e let PIN CONNECTION 4 o s b 1 O ) s ( t c u d o r P e 3 2 1. Drain 2. Source 3. Gate 4. Source ORDER CODES let Order Codes so SD2931 b O Marking Package Packaging SD2931 M174 Plastic Tray ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C) Symbol V(BR)DSS VDGR VGS ID PDISS Tj TSTG Value Unit Drain Source Voltage Parameter 125 V Drain-Gate Voltage (RGS = 1M) 125 V Gate-Source Volatge 20 V Drain Current 20 A Power Dissipation 292 W Max. Operating Junction Temperature 200 C -65 to +150 C 0.6 C/W Storage Temperature THERMAL DATA Rth(j-c) Junction -Case Thermal Resistance REV. 4 July 2004 1/10 SD2931 ELECTRICAL SPECIFICATION (TCASE = 25C) STATIC Symbol * Test Conditions Min. Typ. Unit V(BR)DSS VGS = 0 V IDS = 100 mA IDSS VGS = 0 V VDS = 50 V 50 A IGSS VGS = 20 V VDS = 0 V 250 nA VGS(Q)* VDS = 10 V ID = 250 mA 4.0 V VDS(ON) VGS = 10 V ID = 10 A 3.0 V 125 V 1.5 GFS VDS = 10 V ID = 5 A CISS VGS = 0 V VDS = 50 V f = 1 MHz 480 COSS VGS = 0 V VDS = 50 V f = 1 MHz 190 CRSS VGS = 0 V VDS = 50 V f = 1 MHz 5 mho r P e DYNAMIC Symbol VDD = 50 V IDQ = 250 mA GPS VDD = 50 V IDQ = 250 mA POUT = 150 W D VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz VDD = 50 V IDQ = 250 mA POUT = 150 W All Phase Angles f = 175 MHz Load Mismatch f = 175 MHz bs f = 175 MHz O ) s ( t c u d o IMPEDANCE DATA r P e D t e l o bs Typical Input Impedance ZDL Typical Drain Load Impedance G Zin S FREQ ZIN () ZDL () 30 MHz 1.7 - j 5.7 6.8 + j 0.9 175 MHz 1.2 - j 2.0 2.0 + j 2.4 2/10 t e l o Test Conditions POUT Min. (s) pF 18 ct pF Typ. Max. Unit u d o VGS(Q) sorted with alpha/numeric code marked on unit. O Max. 150 pF W 14 15 dB 55 65 % 10:1 VSWR VGS SORTS AA 1.5 - 1.6 J 2.8 - 2.9 BB 1.6 - 1.7 K 2.9 - 3.0 CC 1.7 - 1.8 L 3.0 - 3.1 DD 1.8 - 1.9 M 3.1 - 3.2 EE 1.9 - 2.0 N 3.2 - 3.3 A 2.0 - 2.1 P 3.3 - 3.4 B 2.1 - 2.2 Q 3.4 - 3.5 C 2.2 - 2.3 R 3.5 - 3.6 D 2.3 - 2.4 S 3.6 - 3.7 E 2.4 - 2.5 T 3.7 - 3.8 F 2.5 - 2.6 U 3.8 - 3.9 G 2.6 - 2.7 V 3.9 - 4.0 H 2.7 - 2.8 SD2931 TYPICAL PERFORMANCE Capacitance vs. Drain-Source Voltage Drain Current vs. Gate Voltage 10000 20 Tc=-20 C ID, DRAIN CURRENT (A) C, CAPACITANCE (pF) f =1MHz 1000 Ciss Coss 100 Tc=+25 C 15 10 Tc=+80 C VDS = 10 V 5 ) s ( ct Crss 0 10 0 10 20 30 40 2 50 2.5 Id =2A u d o 0.8 -25 0 Pr 25 50 0.68 0.66 0.64 0.62 0.6 Id =1A 0.58 25 Id =.1A 75 RTH(j-c) (C/W) VGS, GATE-SOURCE VOLTAGE (NORMALIZED) s ( t c Id =4A 0.84 s b O 0.7 )- 1 Id =.25A 6 0.72 Id =5A Id =11A Vds= 10 V 5.5 t e l o Id =7A 1.04 0.88 5 r P e Id =9A 0.92 4.5 Maximum Thermal Resistance vs. Case Temperature 1.12 0.96 4 u d o Gate-Source Voltage vs. Case Temperature Id =10A 3.5 VGS, GATE-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) 1.08 3 35 45 55 65 75 85 Tc, CASE TEMPERATURE (C) 100 Tc, CASE TEMPERATURE (C) e t e ol s b O Safe Operating Area Ids (A) 100 10 (1) 1 1 10 100 1000 Vds (V) (1) Current in this area may be limited by Rds(on) 3/10 SD2931 TYPICAL PERFORMANCE (175 MHz) Output Power vs. Input Power Output Power vs. Input Power 270 240 Pout, OUTPUT POWER (W) Pout, OUTPUT POWER (W) 270 Vdd= 50V 210 180 Vdd= 40V 150 120 90 60 f= 175MHz Idq= 250mA 30 Tc =-20 C 240 Tc =+25 C 210 180 Tc =+80 C 150 120 90 Vdd= 50V Idq= 250mA f= 175MHz 60 30 0 0 0 5 10 15 20 0 25 5 10 ) s ( ct 15 20 Pin, INPUT POWER(W) Pin, INPUT POWER (W) 25 u d o r P e Power Gain vs. Output Power Efficiency vs. Output Power bs 18 80 O ) 16 14 t(s 12 uc 10 Vdd=50V Idq=250mA f=175Mhz 8 d o r 6 0 50 100 150 Nd, EFFICIENCY (%) Gp, POWER GAIN (dB) t e l o 70 60 50 40 Vdd=50V Idq=250mA f=175Mhz 30 20 200 250 0 50 100 P e Pout, OUTPUT POWER (W) 150 200 250 Pout, OUTPUT POWER (W) t e l o s b O Drain Current vs. Gate-Source Voltage Output Power vs. Supply Voltage 270 20 Pin =10W 240 ID, DRAIN CURRENT (A) Pout,OUTPUT POWER(W) Tc=-20 C 210 Pin =5W 180 150 Pin =2.5W 120 90 60 15 10 Tc=+80 C 5 Idq= 250mA f= 175MHz 30 0 0 24 28 32 36 40 Vdd,DRAIN VOLTAGE(V) 4/10 Tc=+25 C 44 48 52 2 2.5 3 3.5 4 4.5 5 VGS, GATE-SOURCE VOLTAGE (V) 5.5 6 SD2931 175 MHz Test Circuit Schematic (Production Test Circuit) ) s ( ct u d o r P e t e l o Note: All dimensions in inches ) (s s b O REF. 1021579C t c u 175 MHz Test Circuit Component Part List T1 T2 FB1 FB2, FB3 FB4 L1 R1, R3 R2 R4 R5 C1, C11 C2 C3, C8, C9 C4 C5 C6 C7 C10 C12, C15 C13, C14,C16, C17 C18 s b O d o r P e t e l o PCB 4:1 Transformer, 25 ohm Flexible Coax .090 OD 6" Long 1:4 Transformer, 25 ohm Semi-Rigid Coax .141 OD 6" Long Toroid X 2, 0.5" OD .312" ID 850 2 Turns VK200 Shield Bead, 1" OD 0.5" ID 850 3 Turns 1/4 Wave Choke, 50 ohm Semi-Rigid Coax .141 OD 12" Long 0.62" Woven Fiberglass, 1 oz. Copper, 2 Sides, r = 2.55 470 ohm 1 W Chip Resistor 360 ohm 1/2 W Resistor 20 Kohm 10 Turn Potentiometer 560 ohm 1 W Resistor 470 pF ATC Chip Cap 43 pF ATC Chip Cap Arco 404, 12-65 pF Arco 423, 16-100 pF 120 pF ATC Chip Cap 0.01 F ATC Chip Cap 30 pF ATC Chip Cap 91 pF ATC Chip Cap 1200 pF ATC Chip Cap 0.01 F / 500 V Chip Cap 10 F 63 V Electrolytic Capacitor 5/10 SD2931 4 inches 175 MHz Test Circuit Photomaster ) s ( ct u d o r P e s b O 6.4 inches ) (s t c u 175 MHz Test Circuit d o r P e t e l o s b O 6/10 t e l o SD2931 TYPICAL PERFORMANCE (30 MHz) Power Gain vs. Output Power 250 30 PG, POWER GAIN (dB) Pout, OUTPUT POWER (W) Output Power vs. Input Power Vdd = 50 V 200 150 Vdd = 40 V 100 f = 30 MHz IDQ = 250 mA 50 0 29 28 27 f = 30 MHz VDD = 50 V IDQ = 250 mA 26 25 24 0 0.1 0.2 0.3 0.4 0.5 0 40 80 Pin, INPUT POWER (W) ) (s 50 40 t c u 30 f = 30 MHz VDD = 50 V IDQ = 250 mA 20 10 od 0 120 Pr 160 200 t e l o s b O Pin=.31 W Pin=.22 W 150 Pout(W) Efficiency (%) 60 100 Pin=.13 W 50 f = 30 MHz IDQ = 250 mA 0 24 Pout, OUTPUT POWER (W) e t e ol ) s ( ct r P e 200 80 200 Output Power vs. Supply Voltage 70 40 160 u d o Efficiency vs. Output Power 0 120 Pout, OUTPUT POWER (W) 28 32 36 40 44 48 52 VDD(V) s b O Pout, OUTPUT POWER (W) Output Power vs. Gate Voltage 200 T= +25 C T= -20 C 150 T= +80 C 100 VDD = 50 V IDQ = 250 mA f = 30 MHz Pin = Constant 50 0 0 1 2 3 4 5 6 VGS GATE-SOURCE VOLTAGE (V) 7/10 SD2931 30 MHz Test Circuit Schematic (Engineering Test Circuit) ) s ( ct u d o r P e t e l o ) (s s b O t c u 30 MHz Test Circuit Component Part List T1 T2 FB1 FB2 FB3 RFC1 d o r P e t e l o PCB R1, R3 R2 C1,C4,C6,C7,C8,C9, C11,C12,C13 C2,C3 C5 C10 C14 s b O 8/10 9:1 Transformer, 25 ohm Flexible Coax with extra shield .090 OD 15" Long 1:4 Transformer, 50 ohm Flexible Coax .225 OD 15" Long Toroid 1.7" OD .30" ID 220 4Turns Surface Mount EMI Shield Bead Toroid 1.7" OD .300" ID 220 3Turns Toroid 0.5" OD 0.30" ID 125 4Turns 12 awg wire 0.62" Woven Fiberglass, 1 oz. Copper, 2 Sides, r = 2.55 1 K ohm 1 W Chip Resistor 680 ohm 3W Wirewound Resistor 0.1 F ATC Chip Cap 750 pF ATC Chip Cap 470 pF ATC Chip Cap 10 F 63 V Electrolytic Capacitor 100 F 63 V Electrolytic Capacitor SD2931 M174 (.500 DIA 4/L N/HERM W/FLG) MECHANICAL DATA mm DIM. MIN. A Inch TYP. 5.56 B MAX MIN. 5.584 0.219 3.18 TYP. MAX 0.230 0.125 C 6.22 6.48 0.245 0.255 D 18.28 18.54 0.720 0.730 E 3.18 0.125 F 24.64 24.89 0.970 G 12.57 12.83 0.495 H 0.08 0.18 0.003 I 2.11 3.00 0.083 J 3.81 4.45 0.150 7.11 e t e ol K L 25.53 26.67 M 3.05 3.30 ) (s s b O ) s ( ct 0.980 0.505 Pr u d o 0.007 0.118 0.175 0.280 1.005 1.050 0.120 0.130 t c u d o r P e t e l o s b O Controlling Dimension in Inches 1011000D 9/10 SD2931 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2004 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. 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