A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1202 FAX (818) 765-3004 1/1
S
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ecifi cations are sub
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e without notice.
CHARACTERISTICS TA = 25 OCNONE
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCEO IC = 5.0 mA 20 V
BVCER IC = 5.0 mA RBE = 1040 V
BVCBO IC = 100 µA40 V
ICEX VCE = 35 V VBE = -1.50 V
VCE = 15 V VBE = -1.50 V TC = 150 OC5.0 mA
ICEO VCE = 15 V 20 µ
µµ
µA
IEBO VEB = 3.0 V 100 µ
µµ
µA
hFE VCE = 15 V IC = 50 mA
VCE = 5.0 V IC = 360 mA 40
5.0 220 ---
VCE(SAT) IC = 100mA IB = 10 mA 0.5 V
ftVCE = 15 V IC = 50 mA f = 200 MHz 1200 MHz
COB VCB = 15 V f = 1.0 MHz 3.5 pF
NFVCE = 15 V IC = 10 mA RG = 50 f = 200 MHz 3.0 dB
Gve VCC = 15 V IC = 50 mA f = 50 to 216 MHz 1.1 dB
Pin VCC = 15 V IC = 50 mA Rs = 50 f = 200 MHz 0.1 W
NPN SILICON HIGH FREQUENCY TRANSISTOR
2N5109
DESCRIPTION:
The 2N5109 is a Hig h Fr equency
Transist or for General Pur pose
Amplif ier Applications.
MAXI MUM RATINGS
IC400 mA
VCE 20 V
PDISS 1.0 W @ T A = 25 OC
2.5 W @ TC = 75 OC
PACKAGE STYLE TO-39
1 = Emitter 2 = Base
3 = Collector