BAR 63 ... W
Oct-20-19991
Silicon PIN Diode
• PIN diode for high speed
switching of RF signal
• Low forward resistance
• Very low capacitance
• For frequencies up to 3 GHz
1
3
VSO05561
2
BAR 63-04W BAR 63-05W BAR 63-06W
EHA07181
3
12
A1 C2
C1/A2
EHA07179
3
12
A1 A2
C1/C2
EHA07187
3
12
C1 C2
A1/A2
Type Marking Pin Configuration Package
BAR 63-04W
BAR 63-05W
BAR 63-06W
G4s
G5s
G6s
1 = A1
1 = A1
1 = C1
2 = C2
2 = A2
2 = C2
3=C1/A2
3 = C1/2
3 = A1/2
SOT-323
SOT-323
SOT-323
Maximum Ratings
Unit
Parameter Symbol Value
Diode reverse voltage VRV50
100 mAIF
Forward current
Total power dissipation, TS ≤ 105 °C Ptot mW250
150Junction temperature Tj°C
Top
Operating temperature range -55 ... 150
Storage temperature Tstg -55 ... 150
Thermal Resistance
K/W
RthJA ≤ 340
Junction - ambient 1)
Junction - soldering point RthJS ≤ 180
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
BAR 63 ... W
Oct-20-19992
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Unit
Parameter ValuesSymbol
min. max.typ.
DC characteristics
-50V(BR)
Breakdown voltage
I(BR) = 5 µA
V-
50Reverse current
VR = 20 V
IRnA--
1.2Forward voltage
IF = 100 mA
-VFV0.95
AC characteristics
-
0.3
pF
0.3
0.21
CT
-
-
Diode capacitance
VR = 0 V, f = 100 MHz
VR = 5 V, f = 1 MHz
2
-
Ω
1.2
1
Forward resistance
IF = 5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
-
-
rf
-Charge carrier life time
IF = 10 mA, IR = 6 mA, IR = 3 mA
τrr ns75-
-Series inductance -LsnH1.4
BAR 63 ... W
Oct-20-19993
Forward current IF = f (TA*;TS)
* mounted on alumina
0 20 40 60 80 100 120 °C 150
TA,TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
TS
0 20 40 60 80 100 120 °C 150
TA,TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
TA
0 20 40 60 80 100 120 °C 150
TA,TS
0
10
20
30
40
50
60
70
80
90
100
mA
120
I
F
Permissible Pulse Load
IFmax / IFDC = f(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
I
Fmax
/ I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Pulse Load RthJS = f(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
BAR 63 ... W
Oct-20-19994
Diode capacitance CT = f (VR)
f = 1MHz
V
EHD07139
R
T
C
00V
pF
0.1
0.2
0.3
0.4
0.5
10 20 30
Forward resistance rf = f (IF)
f = 100MHz
Ι
EHD07138
F
f
rΩ
10
-2
-1
10 mA
10
-1
10
0
10
1
10
2
10
2
10
0
10
1
