TIP117 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

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. . . designed for general–purpose amplifier and low–speed switching applications.

•High DC Current Gain —

hFE = 2500 (Typ) @ IC = 1.0 Adc

•Collector–Emitter Sustaining Voltage — @ 30 mAdc

VCEO(sus) = 60 Vdc (Min) — TIP110, TIP115

VCEO(sus) = 80 Vdc (Min) — TIP111, TIP116

VCEO(sus) = 100 Vdc (Min) — TIP112, TIP117

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc

•Monolithic Construction with Built–in Base–Emitter Shunt Resistors

•TO–220AB Compact Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

TIP110,

TIP115

ÎÎÎ

TIP111,

TIP116

ÎÎÎÎ

TIP112,

TIP117

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

2.0

4.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

0.4

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

2.0

0.016

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Unclamped Inductive Load Energy —

Figure 13

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristics

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

2.5

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

62.5

ÎÎÎ

C/W

00 20 40 60 80 100 120 160

Figure 1. Power Derating

T, TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

140

2.0

1.0

3.0

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by TIP110/D

 Motorola, Inc. 1995













DARLINGTON

2 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60–80–100 VOLTS

50 WATTS

*Motorola Preferred Device





 



CASE 221A–06

TO–220AB

REV 1

     

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0) TIP110, TIP115

TIP111, TIP116

TIP112, TIP117

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) TIP110, TIP115

(VCE = 40 Vdc, IB = 0) TIP111, TIP116

(VCE = 50 Vdc, IB = 0) TIP112 ,TIP117

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) TIP110, TIP115

(VCB = 80 Vdc, IE = 0) TIP111, TIP116

(VCB = 100 Vdc, IE = 0) TIP112, TIP117

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 2.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

1000

500

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 2.0 Adc, IB = 8.0 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 2.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) TIP115, TIP116, TIP117

TIP110, TIP111, TIP112

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

200

100

ÎÎÎ

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2%.

Figure 2. Switching Times Test Circuit

4.0

0.04

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

2.0

1.0

0.8

0.2 0.06 0.1 0.2 0.4 0.6 1.0 2.0 4.0

0.6

PNP

NPN

td @ VBE(off) = 0

approx

+8.0 V

approx

–12 V

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

51 D1

+4.0 V

VCC

–30 V

TUT

≈

8.0 k

≈

SCOPE

for td and tr, D1 is disconnected

and V2 = 0, RB and RC are varied

to obtain desired test currents.

For NPN test circuit, reverse diode,

polarities and input pulses.

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

VCC = 30 V

IC/IB = 250

0.4

IB1 = IB2

TJ = 25

     

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

JC(t) = r(t) R

JC = 2.5

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) Z

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01 SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02

1.0

Figure 5. TIP115, 116, 117

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

4.0

2.0

1.0

0.1 10 60 80 100

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25

C (SINGLE PULSE)

IC, COLLECTOR CURRENT (AMPS)

TJ = 150

Cdc

1 ms

TIP115

TIP116

TIP117

SECONDARY BREAKDOWN LIMITED

5 ms

CURVES APPLY BELOW

RATED VCEO

1.0

Figure 6. TIP110, 111, 112

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

4.0

2.0

1.0

0.1 10 80 100

IC, COLLECTOR CURRENT (AMPS)

TIP110

TIP111

TIP112

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25

C (SINGLE PULSE)

TJ = 150

SECONDARY BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

ACTIVE–REGION SAFE–OPERATING AREA

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figures 5 and 6 is based on T J(pk) = 150

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150

C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

200

0.04 VR, REVERSE VOLTAGE (VOLTS)

10 0.4 0.6 1.0 2.0 404.00.06 0.1 0.2

C, CAPACITANCE (pF)

TC = 25

Cib

50 Cob

PNP

NPN

Figure 7. Capacitance

100

6.0 10 20

     

4 Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

6.0 k

0.04

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

300 0.06 0.1 0.2 0.6 1.0 4.0

600

800

400

hFE, DC CURRENT GAIN

1.0 k

2.0 k

VCE = 3.0 V

0.4

NPN

TIP110, 111, 112 PNP

TIP115, 116, 117

Figure 9. Collector Saturation Region

3.4

0.1 IB, BASE CURRENT (mA)

0.6 0.2 1.0 2.0 20 100

1.8

IC =

0.5 A

TJ = 25

1.0 A

2.6

3.0

0.5 5.0

2.2

0.04

IC, COLLECTOR CURRENT (AMP)

0.06 0.1 0.2 0.6 1.0 2.0 4.0

1.8

1.4

1.0

0.6

0.2

TJ = 25

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

V, VOLTAGE (VOLTS)

Figure 10. “On” Voltages

VBE @ VCE = 3.0 V

4.0 k

3.0 k

TJ = 125

–55

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

VCE = 3.0 V

TJ = 125

–55

1.4

2.0 A

IB, BASE CURRENT (mA)

TJ = 25

IC, COLLECTOR CURRENT (AMP)

V, VOLTAGE (VOLTS)

TJ = 25

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

VBE @ VCE = 3.0 V

2.0

0.4

6.0 k

0.04

300 0.06 0.1 0.2 0.6 1.0 4.0

600

800

400

1.0 k

2.0 k

0.4

4.0 k

3.0 k

2.0

2.2

1.0

4.0 A

3.4

0.1

0.6 0.2 1.0 2.0 20 100

1.8

2.6

3.0

0.5 5.0 50

1.4

2.2

1.0

IC =

0.5 A 1.0 A 2.0 A 4.0 A

2.2

0.04 0.06 0.1 0.2 0.6 1.0 2.0 4.0

1.8

1.4

1.0

0.6

0.2 0.4

     

Motorola Bipolar Power Transistor Device Data

Figure 11. Temperature Coefficients

NPN

TIP110, 111, 112 PNP

TIP115, 116, 117

Figure 12. Collector Cut-Off Region

IC, COLLECTOR CURRENT (AMP)

+0.8

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

–0.8

–1.6

–2.4

–3.2

–4.0

–4.8

*APPLIES FOR IC/IB

≤

hFE/3

VC for VCE(sat)

VC for VBE

0.04 0.06 0.2 0.4 0.6 1.0 2.0 4.0

C to 150

–55

C to 25

0.1

C to 150

–55

C to 25

IC, COLLECTOR CURRENT (AMP)

+0.8

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

–0.8

–1.6

–2.4

–3.2

–4.0

–4.8

*APPLIES FOR IC/IB

≤

hFE/3

VC for VCE(sat)

VC for VBE

0.04 0.06 0.2 0.4 0.6 1.0 2.0 4.0

C to 150

–55

C to 25

0.1

C to 150

–55

C to 25

105

–0.6

103

102

100

104

101

10–1

VBE, BASE-EMITTER VOLTAGE (VOLTS)

–0.4 –0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2

VCE = 30 V

TJ = 150

100

REVERSE FORWARD

+1.4

, COLLECTOR CURRENT ( A)

105

–0.6

103

102

100

104

101

10–1

VBE, BASE-EMITTER VOLTAGE (VOLTS)

–0.4 –0.2 0 +0.2 +0.4 +0.6 +0.8 +1.0 +1.2

VCE = 30 V

TJ = 150

100

REVERSE FORWARD

+1.4

, COLLECTOR CURRENT ( A)

Figure 13. Inductive Load Switching

Note A: Input pulse width is increased until ICM = 0.71 A,

NPN test shown; for PNP test

reverse all polarity and use MJE224 driver.

0.71 A

0 V

–5 V

≈

3.5 ms (SEE NOTE A)

INPUT

VOLTAGE

COLLECTOR

CURRENT

COLLECTOR

VOLTAGE

VCER

0 V

20 V

100 ms

VCE(sat)

INPUT MJE254

Ω

RBB1

2 k

Ω

RBB2

100

Ω

VBB2 = 0

TUT

VCE MONITOR

100 mH

VCC = 20 VIC

MONITOR

RS =

0.1

Ω

TEST CIRCUIT VOLTAGE AND CURRENT WAVEFORMS

–

VBB1 = 10 V +

–

     

6 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

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TIP110/D

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