Plastic Medium Power NPN
Silicon Transistor
...designed for power output stages for television, radio,
phonograph and other consumer product applications.
•Suitable for Transformerless, Line–Operated Equipment
•Thermopad Construction Provides High Power Dissipation Rating for
High Reliability
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCEO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
350
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VCB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
375
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VEB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
5.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
Peak
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
IC
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
0.5
1.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎ
ÎÎÎÎ
IB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
0.25
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25C
Derate above 25C
ÎÎÎÎ
ÎÎÎÎ
PD
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
20
0.16
ÎÎÎ
ÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
–65 to +150
ÎÎÎ
Î
Î
Î
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
ÎÎÎÎÎ
θJC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
6.25
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎÎÎ
ÎÎÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
BVCEO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
350
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(At rated voltage)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICBO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
100
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
IEBO
ÎÎÎÎ
Î
ÎÎ
Î
—
ÎÎÎÎÎ
Î
ÎÎÎ
Î
100
ÎÎÎÎ
Î
ÎÎ
Î
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
30
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
240
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ON Semiconductor
Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 3 1Publication Order Number:
BD159/D
BD159
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS
20 WATTS
CASE 77–09
TO–225AA TYPE
321
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
BD159
http://onsemi.com
2
25
20
15
10
5.0 0 20 40 60 80 100 120 140 160
Figure 1. Power–Temperature Derating Curve
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
1.0
10
Figure 2. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.8
0.6
0.4
0.2
020 30 50 100 200 300 500
VBE @ VCE = 10 V
VCE(sat) @ IC/IB = 10
TJ = +25°C
VBE @ IC/IB = 10
IC/IB = 5.0
V, VOLTAGE (VOLTS)
1.0
10
Figure 3. DC Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.01 20 30 50 100 30
0
200
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.03
0.02
IC, COLLECTOR CURRENT (AMPS)
TJ = 150°C
dc
500 µs
10 µs
1.0 ms
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the
applicable Safe Area to avoid causing a catastrophic failure.
To insure operation below, the maximum TJ,
power–temperature derating must be observed for both
steady state and pulse power conditions.
Figure 4. Current Gain
IC, COLLECTOR CURRENT (mAdc)
10 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500
300
200
70
30
20
TJ = 150°C
hFE, DC CURRENT GAIN
50
100
+ 100°C
+ 25°C
- 55°C
7.0 70
VCE = 10 V
VCE = 2.0 V
BD159
http://onsemi.com
3
PACKAGE DIMENSIONS
CASE 77–09
TO–225AA TYPE
ISSUE W
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
–B–
–A– M
K
FC
Q
H
V
G
S
D
JR
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 --- 1.02 ---

BD159
http://onsemi.com
4
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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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For additional information, please contact your local
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BD159/D
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