DE275-101N30A
RF Power MOSFET
V
DSS = 100 V
ID25 = 30.0 A
RDS(on) ≤ 0.06 Ω
ΩΩ
Ω
PDC = 550 W
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 150°C 100 V
V
DGR
T
J
= 25°C to 150°C; R
GS
= 1 MΩ 100 V
V
GS
Continuous ±20 V
V
GSM
Transient ±30 V
I
D25
T
c
= 25°C 30.0 A
I
DM
T
c
= 25°C, pulse width limited by T
JM
240 A
I
AR
T
c
= 25°C TBD A
E
AR
T
c
= 25°C TBD mJ
dv/dt
I
S
≤ I
DM
, di/dt ≤ 100A/µs, V
DD
≤ V
DSS
,
T
j
≤ 150°C, R
G
= 0.2Ω 5.5 V/ns
I
S
= 0 >200 V/ns
P
DC
550 W
P
DHS
T
c
= 25°C
Derate 4.4W/°C above 25°C 270 W
P
DAMB
T
c
= 25°C 3.5 W
R
thJC
0.25 C/W
R
thJHS
0.53 C/W
Symbol Test Conditions Characteristic Values
T
J
= 25°C unless otherwise specified
min. typ. max.
V
DSS
V
GS
= 0 V, I
D
= 3 ma 100 V
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µa 2 2.5 4 V
I
GSS
V
GS
= ±20 V
DC
, V
DS
= 0 ±100 nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25°C
V
GS
= 0 T
J
= 125°C
25
250 µA
µA
R
DS(on)
V
GS
= 15 V, I
D
= 0.5I
D25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 0.06 Ω
g
fs
V
DS
= 15 V, I
D
= 0.5I
D25
, pulse test 9.7 S
T
J
-55 +175 °C
T
JM
175 °C
T
stg
-55 +175 °C
T
L
1.6mm(0.063 in) from case for 10 s 300 °C
Weight 2 g
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q
g
process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R
DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
switching
• Easy to mount—no insulators needed
• High power density
N-Channel Enhancement Mode
Low Q
g
and R
g
High dv/dt
Nanosecond Switching
DRAIN
SG1 SG2
GATE
SD1 SD2
DE275-101N30A
RF Power MOSFET
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified)
min. typ. max.
R
G
5 Ω
C
iss
2500 pF
C
oss
V
GS
= 0 V, V
DS
= 0.8 V
DSS(max)
,
f = 1 MHz 700 pF
C
rss
145 pF
C
stray
Back Metal to any Pin 16 pF
T
d(on)
5 ns
T
on
V
GS
= 15 V, V
DS
= 0.8 V
DSS
I
D
= 0.5 I
DM
R
G
= 0.2 Ω (External)
5 ns
T
d(off)
8 ns
T
off
8 ns
Q
g(on)
94 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
I
D
= 0.5 I
D25
11 nC
Q
gd
42 nC
Source-Drain Diode Characteristic Values
(T
J
= 25°C unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 30.0 A
I
SM
Repetitive; pulse width limited by T
JM
240 A
V
SD
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2% 2.5 V
T
rr
600 ns
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,860,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
For detailed device mounting and installation instructions, see the “Device Installation & Mounting Instructions” technical note on the IX-
YSRF web site at;
http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf
CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device.
Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information pub-
lished in this document at any time and without notice.
DE275-101N30A
RF Power MOSFET
V
DS
vs. Capacitance
10
100
1000
10000
0 10 20 30 40 50 60 70 80
V
DS
Voltage (V)
Capacitance (pF)
Typical Output Characteristics
PW = 10µS
0
5
10
15
20
25
30
35
40
45
50
55
0 5 10 15 20 25 30
V
DS,
Drain-to-Source Voltage (V)
I
D
, Drain Currnet (A)
Typical Transfer Characteristics
V
D S
= 15V I
D
= 15A
0
10
20
30
40
50
60
70
80
90
100
3 4 5 6 7 8 9
V
GS
, Gate-to Source Voltage (volts)
I
D
, Drain Current (A)
Extended Typical Output Characteristics
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
150
160
0 10 20 30 40 50
V
DS
, Drain-to-Source Voltage
I
D
, Drain Currnet (A)
Gate Charge vs. Gate-to-Source Voltage
V
DS
= 50V I
D
= 15A
0
2
4
6
8
10
12
14
16
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160
Gate Charge (nC)
Gate-to-Source Voltage (V)
Fig. 1 Fig. 2
Fig. 4 Fig. 3
Fig. 5
Top 9V
8V
7V
6V
5.5V
5V
4.5V
4V
Bottom 3.5V
Top 6-9V
5.5V
5V
4.5V
4V
Bottom 3.5V
C
iss
C
oss
C
rss
DE275-101N30A
RF Power MOSFET
Fig. 6 Package Drawing
Source Source
Source Source
Gate Drain
DE275-101N30A
RF Power MOSFET
An IXYS Company
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: 970-493-1903
Email: sales@ixyscolorado.com
Web: http://www.ixyscolorado.com
101N30A DE-SERIES SPICE Model
The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE
level 3 MOSFET model. It includes the stray inductive terms L
G
, L
S
and L
D
. Rd is the R
DS(ON)
of the
device, Rds is the resistive leakage term. The output capacitance, C
OSS
, and reverse transfer ca-
pacitance, C
RSS
are modeled with reversed biased diodes. This provides a varactor type response
necessary for a high power device model. The turn on delay and the turn off delay are adjusted
via Ron and Roff.
Figure 7 DE-SERIES SPICE Model
This SPICE model may be downloaded as a text file from the IXYSRF web site at
http://www.ixysrf.com/products/switch_mode.html
http://www.ixysrf.com/spice/de275-101n30a.html
*SYM=POWMOSN
.SUBCKT 101N09A 10 20 30
* TERMINALS: D G S
* 100 Volt 30 Amp .05 ohm N-Channel Power MOSFET 10-30-2001
M1 1 2 3 3 DMOS L=1U W=1U
RON 5 6 1.5
DON 6 2 D1
ROF 5 7 .2
DOF 2 7 D1
D1CRS 2 8 D2
D2CRS 1 8 D2
CGS 2 3 2.5N
RD 4 1 .05
DCOS 3 1 D3
RDS 1 3 5.0MEG
LS 3 30 .1N
LD 10 4 1N
LG 20 5 1N
.MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=9.0)
.MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N)
.MODEL D2 D (IS=.5F CJO=1100P BV=100 M=.5 VJ=.6 TT=1N RS=10M)
.MODEL D3 D (IS=.5F CJO=300P BV=100 M=.3 VJ=.4 TT=400N RS=10M)
.ENDS
Doc #9200-0242 Rev 1
© 2009 IXYS RF
