S-8211C Series
www.sii-ic.com
BATTERY PROTECTION IC
FOR 1-CELL PACK
© Seiko Instruments Inc., 2004-2013 Rev.7.5_00
Seiko Instruments Inc. 1
The S-8211C Series is a protection IC for 1-cell lithium-ion / lithium polymer rechargeable battery and includes high-
accuracy voltage detection circuits and delay circuits.
The S-8211C Series is suitable for protecting 1-cell lithium-ion / lithium polymer rechargeable battery packs from
overcharge, overdischarge, and overcurrent.
Features
• High-accuracy voltage detection circuit
Overcharge detection voltage 3.9 V to 4.5 V (5 mV step) Accuracy ±25 mV (Ta = +25°C)
Accuracy ±30 mV (Ta = −5°C to +55°C )
Overcharge release voltage 3.8 V to 4.43 VP
*1
PAccuracy ±50 mV
Overdischarge detection voltage 2.0 V to 3.0 V (10 mV step) Accuracy ±50 mV
Overdischarge release voltage 2.0 V to 3.4 VP
*2
PAccuracy ±100 mV
Discharge overcurrent detection voltage 0.05 V to 0.30 V (10 mV step) Accuracy ±15 mV
Load short-circuiting detection voltage 0.5 V (fixed) Accuracy ±200 mV
Charge overcurrent detection voltage −0.1 V (fixed) Accuracy ±30 mV
• Detection delay times are generated only b y an internal circuit (external capacitors are unnecessary).
Accuracy ±20%
• High-withstand voltage device is used for charger connection p ins
(VM pin and CO pin: Absolute maximum rating = 28 V)
• 0 V battery charge function "available" / "unavailable" is selectable.
• Power-down function "available" / "unavailable" is selecta ble.
• Wide operation temperature range Ta = −40°C to +85°C
• Low current consumption
During operation 3.0 μA typ., 5.5 μA max. (Ta = +25°C)
During power-down 0.2 μA max. (Ta = +25°C)
• Lead-free, Sn 100%, halogen-freeP
*3
*1. Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage
(Overcharge hysteresis voltage can be sele cted as 0 V or from a range of 0.1 V to 0.4 V in 50 mV step.)
*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage
(Overdischarge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.7 V in 100 mV step.)
*3. Refer to " Product Name Structure" for details.
Applications
• Lithium-ion rechargeabl e battery pack
• Lithium polymer rechargeable battery pack
Packages
• SOT-23-5
• SNT-6A
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series Rev.7.5_00
Seiko Instruments Inc.
2
Block Diagram
−
+
−
+
VM
VSS
VDD
CO
DO
Overcharge
detection
comparator
Discharg e ov e r c ur r e nt detect ion
comparator
−
+
−
+
Load short-circuiting detection
com
p
arato
r
Output control circuit
−
+
Charge overcurrent detection
comparator
R
VMD
R
VMS
Charger de te c ti on c i r c uit
0 V battery charge /
charge inhi bition circuit
Oscillator c o ntrol
circuit
Overdischarge
detection
comparator
Divider control
circuit
Remark All diodes sho wn in figure are parasitic diodes.
Figure 1
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.5_00 S-8211C Series
Seiko Instruments Inc. 3
Product Name Structure
1. Product name
S-8211C xx - xxxx x
Serial code
*2
Sequentially set from AA to ZZ
Package name (abbreviation) and IC packing specifications
*1
M5T1: SOT- 23-5, Tape
I6T1: SNT-6A, Tape
Environmental code
U: Lead-free (Sn 100%), halogen-free
G: Lead-free (for details, please contact our sales office)
*1. Refer to the tape drawing.
*2. Refer to "3. Product name list".
2. Packages Table 1 Package Drawing Codes
Package Name Dimension Tape Reel Land
SOT-23-5 MP005-A-P-SD MP005-A-C-SD MP005-A-R-SD −
SNT-6A PG006-A-P-SD PG006-A-C-SD PG006-A-R-SD PG006-A-L-SD
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series Rev.7.5_00
Seiko Instruments Inc.
4
3. Product name list
3. 1 SOT-23-5
Table 2
Product Name
Over-
charge
Detection
Voltage
[V
CU
]
Over-
charge
Release
Voltage
[V
CL
]
Over-
discharge
Detection
Voltage
[V
DL
]
Over-
discharge
Release
Voltage
[V
DU
]
Discharge
Overcurrent
Detection
Voltage
[V
DIOV
]
0 V Battery
Charge
Function
Delay Time
Combination
P
*1
Power-down
Function
S-8211CAA-M5T1x 4.275 V 4.175 V 2.30 V 2.40 V 0.10 V Available (1) Available
S-8211CAB-M5T1x 4.325 V 4.075 V 2.50 V 2.90 V 0.15 V Unavailable (2) Available
S-8211CAD-M5T1x 4.350 V 4.150 V 2.30 V 3.00 V 0.20 V Available (3) Available
S-8211CAE-M5T1x 4.280 V 4.180 V 2.30 V 2.30 V 0.12 V Available (4) Available
S-8211CAF-M5T1x 4.275 V 4.275 V 2.30 V 2.30 V 0.10 V Available (5) Available
S-8211CAH-M5T1x 4.280 V 4.080 V 2.30 V 2.30 V 0.08 V Available (1) Available
S-8211CAI-M5T1x 4.280 V 4.080 V 2.30 V 2.30 V 0.10 V Available (1) Available
S-8211CAJ-M5T1x 4.280 V 4.080 V 2.30 V 2.30 V 0.10 V Unavailable (1) Available
S-8211CAK-M5T1x 4.280 V 4.080 V 2.30 V 2.30 V 0.13 V Unavailable (1) Available
S-8211CAL-M5T1x 4.280 V 4.130 V 2.60 V 3.10 V 0.15 V Unavailable (1) Available
S-8211CAM-M5T1x 4.280 V 4.130 V 2.80 V 3.10 V 0.15 V Unavailable (1) Available
S-8211CAN-M5T1x 4.200 V 4.100 V 2.80 V 2.90 V 0.15 V Unavailable (1) Available
S-8211CAO-M5T1x 4.275 V 4.075 V 2.30 V 2.30 V 0.12 V Available (5) Available
S-8211CAP-M5T1x 4.275 V 4.075 V 2.30 V 2.30 V 0.13 V Available (5) Available
S-8211CAQ-M5T1x 4.275 V 4.075 V 2.30 V 2.30 V 0.15 V Available (5) Available
S-8211CAR-M5T1x 4.275 V 4.075 V 2.30 V 2.30 V 0.15 V Available (1) Available
S-8211CAS-M5T1x 4.280 V 4.130 V 2.80 V 3.10 V 0.10 V Unavailable (1) Available
S-8211CAT-M5T1x 4.275 V 4.075 V 2.80 V 3.10 V 0.10 V Availa bl e (4) Available
S-8211CAU-M5T1x 4.280 V 4.130 V 2.80 V 3.10 V 0.05 V Unavailable (1) Available
S-8211CAV-M5T1x 4.325 V 4.075 V 2.50 V 2.90 V 0.15 V Available (2) Available
S-8211CAY-M5T1x 4.280 V 4.280 V 2.80 V 2.80 V 0.05 V Available (1)
Available
S-8211CAZ-M5T1x 4.280 V 4.280 V 3.00 V 3.00 V 0.075 V Available (1)
Available
S-8211CBV-M5T1x 4.280 V 4.080 V 2.80 V 2.80 V 0.15 V Available (4)
Available
S-8211CCD-M5T1U 4.280 V 4.130 V 2.70 V 3.10 V 0.20 V Available (1)
Available
S-8211CCK-M5T1U 4.350 V 4.150 V 2.10 V 2.20 V 0.30 V Unavailable (1) Available
S-8211CCQ-M5T1U 4.350 V 4.150 V 2.10 V 2.20 V 0.12 V Unavailable (1) Available
S-8211CCR-M5T1U 4.350 V 4.150 V 2.10 V 2.20 V 0.15 V Unavailable (1) Available
S-8211CCT-M5T1U 4.150 V 4.050 V 2.50 V 2.80 V 0.16 V Available (1)
Available
S-8211CCV-M5T1U 4.220 V 4.120 V 2.50 V 2.80 V 0.16 V Available (1)
Unavailable
S-8211CCW-M5T1U 4.280 V 4.130 V 2.30 V 3.00 V 0.20 V Available (3)
Available
S-8211CDB-M5T1U 4.100 V 3.850 V 2.50 V 2.90 V 0.15 V Unavailable (1) Available
S-8211CDD-M5T1U 4.350 V 4.150 V 2.10 V 2.20 V 0.12 V Unavailable (6) Available
S-8211CDG-M5T1U 4.275 V 4.075 V 2.50 V 3.00 V 0.16 V Available (1)
Available
*1. Refer to Table 4 about the details of the delay time combinations.
Remark 1. Please contact our sales office for the prod ucts with detection voltage value other than those specified above.
2. x: G or U
3. Please select products of environmental code = U for Sn 100%, halogen-free products.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.5_00 S-8211C Series
Seiko Instruments Inc. 5
3. 2 SNT-6A
Table 3 (1 / 2)
Product Name
Over-
charge
Detection
Voltage
[V
CU
]
Over-
charge
Release
Voltage
[V
CL
]
Over-
discharge
Detection
Voltage
[V
DL
]
Over-
discharge
Release
Voltage
[V
DU
]
Discharge
Overcurrent
Detection
Voltage
[V
DIOV
]
0 V Battery
Charge
Function
Delay Time
Combination
P
*1
Power-down
Function
S-8211CAA-I6T1x 4.275 V 4.175 V 2.30 V 2.40 V 0.10 V Available (1)
Available
S-8211CAB-I6T1x 4.325 V 4.075 V 2.50 V 2.90 V 0.15 V Unavailable (2) Available
S-8211CAD-I6T1x 4.350 V 4.150 V 2.30 V 3.00 V 0.20 V Available (3) Available
S-8211CAE-I6T1x 4.280 V 4.180 V 2.30 V 2.30 V 0.12 V Available (4) Available
S-8211CAF-I6T1x 4.275 V 4.275 V 2.30 V 2.30 V 0.10 V Available (5) Available
S-8211CAH-I6T1x 4.280 V 4.080 V 2.30 V 2.30 V 0.08 V Available (1) Available
S-8211CAI-I6T1x 4.280 V 4.080 V 2.30 V 2.30 V 0.10 V Available (1) Available
S-8211CAJ-I6T1x 4.280 V 4.080 V 2.30 V 2.30 V 0.10 V Unavailable (1) Available
S-8211CAK-I6T1x 4.280 V 4.080 V 2.30 V 2.30 V 0.13 V Unavailable (1) Available
S-8211CAL-I6T1x 4.280 V 4.130 V 2.60 V 3.10 V 0.15 V Unavailable (1) Available
S-8211CAM-I6T1x 4.280 V 4.130 V 2.80 V 3.10 V 0.15 V Unavailable (1) Available
S-8211CAN-I6T1x 4.200 V 4.100 V 2.80 V 2.90 V 0.15 V Unavailable (1) Available
S-8211CAO-I6T1x 4.275 V 4.075 V 2.30 V 2.30 V 0.12 V Available (5) Available
S-8211CAP-I6T1x 4.275 V 4.075 V 2.30 V 2.30 V 0.13 V Available (5) Available
S-8211CAQ-I6T1x 4.275 V 4.075 V 2.30 V 2.30 V 0.15 V Available (5) Available
S-8211CAR-I6T1x 4.275 V 4.075 V 2.30 V 2.30 V 0.15 V Available (1) Available
S-8211CAS-I6T1x 4.280 V 4.130 V 2.80 V 3.10 V 0.10 V Unavailable (1) Available
S-8211CAT-I6T1x 4.275 V 4.075 V 2.80 V 3.10 V 0.10 V Available (4) Available
S-8211CAU-I6T1x 4.280 V 4.130 V 2.80 V 3.10 V 0.05 V Unavailable (1) Available
S-8211CAV-I6T1x 4.325 V 4.075 V 2.50 V 2.90 V 0.15 V Available (2) Available
S-8211CAW-I6T1x 4.280 V 4.080 V 2.40 V 2.40 V 0.05 V Unavailable (6) Available
S-8211CAX-I6T1x 4.275 V 4.175 V 2.30 V 2.30 V 0.12 V Available (4)
Available
S-8211CAY-I6T1x 4.280 V 4.280 V 2.80 V 2.80 V 0.05 V Available (1)
Available
S-8211CAZ-I6T1x 4.280 V 4.280 V 3.00 V 3.00 V 0.075 V Available (1)
Available
S-8211CBA-I6T1x 4.275 V 4.175 V 2.30 V 2.40 V 0.05 V Available (1)
Available
S-8211CBB-I6T1x 4.300 V 4.100 V 2.30 V 2.30 V 0.13 V Available (1)
Available
S-8211CBD-I6T1x 4.275 V 4.275 V 2.30 V 2.30 V 0.05 V Available (5)
Available
S-8211CBF-I6T1x 4.300 V 4.100 V 2.10 V 2.10 V 0.13 V Available (1)
Available
S-8211CBH-I6T1x 4.275 V 4.175 V 2.80 V 2.90 V 0.08 V Available
(1) Available
S-8211CBJ-I6T1x 4.275 V 4.075 V 2.80 V 2.90 V 0.10 V Available
(5) Available
S-8211CBN-I6T1x 4.225 V 4.125 V 2.00 V 2.00 V 0.20 V Unavailable (7) Available
S-8211CBO-I6T1x 4.270 V 4.070 V 2.30 V 2.30 V 0.10 V Available (5)
Available
S-8211CBR-I6T1x 4.280 V 4.180 V 2.30 V 2.30 V 0.12 V Unavailable (4) Available
S-8211CBV-I6T1x 4.280 V 4.080 V 2.80 V 2.80 V 0.15 V Available (4)
Available
S-8211CBW-I6T1x 4.280 V 4.180 V 2.50 V 2.70 V 0.19 V Unavailable (1)
Available
S-8211CBZ-I6T1x 4.375 V 4.125 V 2.50 V 2.90 V 0.12 V Unavailable (4) Available
S-8211CCB-I6T1x 4.250 V 4.050 V 3.00 V 3.20 V 0.10 V Available (1)
Available
S-8211CCC-I6T1x 4.270 V 4.070 V 3.00 V 3.00 V 0.10 V Available (5)
Available
S-8211CCD-I6T1x 4.280 V 4.130 V 2.70 V 3.10 V 0.20 V Available (1)
Available
S-8211CCE-I6T1x 4.225 V 4.025 V 2.80 V 2.80 V 0.15 V Available (8)
Unavailable
S-8211CCF-I6T1x 4.350 V 4.050 V 2.30 V 2.30 V 0.13 V Available (5)
Available
S-8211CCG-I6T1x 4.275 V 4.075 V 2.50 V 2.70 V 0.16 V Unavailable (1) Available
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series Rev.7.5_00
Seiko Instruments Inc.
6
Table 3 (2 / 2)
Product Name
Over-
charge
Detection
Voltage
[V
CU
]
Over-
charge
Release
Voltage
[V
CL
]
Over-
discharge
Detection
Voltage
[V
DL
]
Over-
discharge
Release
Voltage
[V
DU
]
Discharge
Overcurrent
Detection
Voltage
[V
DIOV
]
0 V Battery
Charge
Function
Delay Time
Combination
P
*1
Power-down
Function
S-8211CCH-I6T1x 4.275 V 4.075 V 2.80 V 2.80 V 0.15 V Unavailable (8) Available
S-8211CCI-I6T1x 4.275 V 4.075 V 2.60 V 2.60 V 0.15 V Available (5) Available
S-8211CCJ-I6T1U 4.225 V 4.025 V 2.50 V 2.90 V 0.15 V Available (8) Unavailable
S-8211CCM-I6T1x 4.275 V 4.075 V 2.80 V 3.10 V 0.20 V Available (4) Available
S-8211CCN-I6T1x 4.280 V 4.180 V 2.50 V 2.70 V 0.17 V Unavailable (1) Available
S-8211CCS-I6T1U 4.425 V 4.225 V 2.30 V 2.30 V 0.165 V Unavailable (5) Available
S-8211CCU-I6T1U 4.425 V 4.225 V 2.50 V 2.50 V 0.13 V Available (5) Available
S-8211CCX-I6T1U 4.425 V 4.225 V 2.30 V 2.30 V 0.07 V Available (5) Available
S-8211CCY-I6T1U 4.280 V 4.180 V 2.80 V 2.80 V 0.12 V Unavailable (4) Available
S-8211CCZ-I6T1U 4.280 V 4.180 V 2.50 V 2.50 V 0.12 V Unavailable (4) Available
S-8211CDA-I6T1U 4.280 V 4.130 V 2.60 V 3.10 V 0.10 V Unavailable (1) Available
S-8211CDC-I6T1U 4.280 V 4.130 V 3.00 V 3.10 V 0.15 V Unavailable (1) Available
S-8211CDE-I6T1U 4.425 V 4.225 V 2.50 V 2.50 V 0.10 V Available (5) Available
S-8211CDF-I6T1U 4.425 V 4.225 V 2.80 V 2.80 V 0.12 V Available (5) Available
S-8211CDH-I6T1U 4.275 V 4.075 V 2.60 V 2.60 V 0.10 V Available (5) Available
S-8211CDI-I6T1U 4.425 V 4.225 V 2.50 V 2.50 V 0.15 V Available (5) Available
S-8211CDO-I6T1U 4.425 V 4.225 V 2.50 V 2.50 V 0.10 V Unavailable (1) Available
*1. Refer to Table 4 about the details of the delay time combinations.
Remark 1. Please contact our sales office for the products with detection voltage value other than those specified above.
2. x: G or U
3. Please select products of environmental cod e = U for Sn 100%, halogen-free products.
Table 4
Delay Time
Combination
Overcharge
Detection
Delay Time
[tCU]
Overdischarge
Detection
Delay Time
[tDL]
Discharge Overcurrent
Detection
Delay Time
[tDIOV]
Load Short-circuiting
Detection
Delay Time
[tSHORT]
Charge Overcurrent
Detection
Delay Time
[tCIOV]
(1) 1.2 s 150 ms 9 ms 300 μs 9 ms
(2) 1.2 s 150 ms 9 ms 560 μs 9 ms
(3) 143 ms 38 ms 18 ms 300 μs 9 ms
(4) 1.2 s 150 ms 18 ms 300 μs 9 ms
(5) 1.2 s 38 ms 9 ms 300 μs 9 ms
(6) 1.2 s 150 ms 4.5 ms 300 μs 9 ms
(7) 573 ms 150 ms 4.5 ms 300 μs 4.5 ms
(8) 1.2 s 75 ms 9 ms 300 μs 9 ms
Remark The delay times can be cha ng ed within the range listed in Table 5. For details, please contact our sales office.
Table 5
Delay Time
Symbol
Selection Range
Remark
Overcharge detection delay time
tCU − 143 ms 573 ms 1.2 sP
*1 Select a value from the left.
Overdischarge detection delay time
tDL 38 ms 75 ms 150 msP
*1 300 ms Select a value from the left.
Discharge overcurrent detection delay time
tDIOV − 4.5 ms
9 msP
*1 18 ms Select a value from the left.
Load short-circuiting detection delay time tSHORT − − 300 μsP
*1 560 μs Select a value from the left.
Charge overcurrent detection delay time
tCIOV − 4.5 ms
9 msP
*1 18 ms Select a value from the left.
*1. The value is the delay time of the standa rd products.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.5_00 S-8211C Series
Seiko Instruments Inc. 7
Pin Configurations
1. SOT-23-5
Table 6
Pin No. Symbol Description
1 VM Voltage detection pin between VM pin and VSS pin
(Overcurrent / charger detection pin)
2 VDD Input pin for positive power supply
3 VSS Input pin for ne gative power supply
4 DO Connection pin of discharge control FET gate
(CMOS output)
132
45
Top view
Figure 2 5 CO Connection pin of charge control FET gate
(CMOS output)
2. SNT-6A
Table 7
Pin No. Symbol Description
1
NCP
*1 No connection
2 CO
Connection pin of charge control F ET gate
(CMOS output)
3 DO
Connection pin of discharge control F ET gate
(CMOS output)
5
4
6
2
3
1
Top view
Figure 3
4 VSS Input pin for negative power supply
5 VDD Input pin for p ositive power supply
6 VM
Voltage detection pin between VM pin and VSS pin
(Overcurrent / charger detection pin)
*1. The NC pin is electricall y open.
The NC pin can be connected to VDD pin or VSS pin.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series Rev.7.5_00
Seiko Instruments Inc.
8
Absolute Maximum Ratings
Table 8 (Ta = +25°C unless otherwise specified)
Item Symbol Applied pin Absolute Maximum Rating Unit
Input voltage between VDD pin and
VSS pin VDS VDD
VSS − 0.3 to VSS + 12 V
VM pin input voltage VVM VM VDD − 28 to VDD + 0.3 V
DO pin output voltage VDO DO VSS − 0.3 to VDD + 0.3 V
CO pin output voltage VCO CO VVM − 0.3 to VDD + 0.3 V
− 250 (When not mounted on b oard) mW
SOT-23-5 − 600P
*1 mW
Power dissipation SNT-6A PD
− 400P
*1 mW
Operation ambient temperature Topr − −40 to +85 °C
Storage temperature Tstg − −55 to +125 °C
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
050 100 150
700
400
0
Power Dissi
p
ati on
(
PD
)
[
mW
]
Ambient Tem
p
erature
(
Ta
)
[
°C
]
200
600
500
300
100
SNT-6A
SOT-23-5
Figure 4 Power Dissipation of Package (When Mounted on Board)
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.5_00 S-8211C Series
Seiko Instruments Inc. 9
Electrical Characteristics
1. Except detection delay time (Ta = +25°C)
Table 9 (Ta = +25°C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition Test
Circuit
Dete ct i o n Volt a ge
3.90 V to 4.50 V, adjustable V
CU
−
0.025 V
CU
V
CU
+
0.025 V 1 1
Overcharge detection voltage V
CU
3.90 V to 4.50 V, adjustable,
Ta =
−
5°C to
+
55°C
P
*1
V
CU
−
0.03 V
CU
V
CU
+
0.03 V 1 1
V
CL
≠
V
CU
V
CL
−
0.05 V
CL
V
CL
+
0.05 V 1 1
Overcharge release voltage V
CL
3.80 V to 4.43 V,
adjustable V
CL
= V
CU
V
CL
−
0.025 V
CL
V
CL
+
0.025 V 1 1
Overdischarge detection voltage V
DL
2.00 V to 3.00 V, adjustable V
DL
−
0.05 V
DL
V
DL
+
0.05 V 2 2
V
DU
≠
V
DL
V
DU
−
0.10 V
DU
V
DU
+
0.10 V 2 2
Overdischarge release voltage V
DU
2.00 V to 3.40 V,
adjustable V
DU
= V
DL
V
DU
−
0.05 V
DU
V
DU
+
0.05 V 2 2
Discharge overcurrent detection voltage V
DIOV
0.05 V to 0.30 V, adjustable V
DIOV
−
0.015 V
DIOV
V
DIOV
+
0.015 V 3 2
Load short-circuiting detection voltage
P
*2
V
SHORT
−
0.30 0.50 0.70 V 3 2
Charge overcurrent detection voltage V
CIOV
−
−
0.13
−
0.1
−
0.07 V 4 2
0 V Battery Charge Function
0 V battery charge starting charger voltage V
0CHA
0 V battery charge function
"available" 1.2
−
−
V 11 2
0 V battery charge inhibition battery voltage V
0INH
0 V battery charge function
"unavailable"
−
−
0.5 V 12 2
Internal Resistance
Resistance between VM pin and VDD pin R
VMD
V
DD
= 1.8 V, V
VM
= 0 V 100 300 900
k
Ω
6 3
Resistance between VM pin and VSS pin R
VMS
V
DD
= 3.5 V, V
VM
= 1.0 V 10 20 40 k
Ω
6 3
Input Volt a g e
Operation voltage between VDD pin
and VSS pin V
DSOP1
−
1.5
−
8 V
−
−
Operation voltage between VDD pin
and VM pi n V
DSOP2
−
1.5
−
28 V
−
−
Input Current (With Power-down Function)
Current consumption during operation I
OPE
V
DD
= 3.5 V, V
VM
= 0 V 1.0 3.0 5.5
μ
A 5 2
Current consumption during power-down I
PDN
V
DD
= V
VM
= 1.5 V
−
−
0.2
μ
A 5 2
Input Current (Without Power-down Function)
Current consumption during operation I
OPE
V
DD
= 3.5 V, V
VM
= 0 V
1.0 3.0 5.5
μ
A 5 2
Current consumption during overdischarge I
OPED
V
DD
= V
VM
= 1.5 V
0.3 2.0 3.5
μ
A 5 2
Output Resistance
CO pin resistance "H" R
COH
V
CO
= 3.0 V, V
DD
= 3.5 V, V
VM
= 0 V 2.5 5 10 k
Ω
7 4
CO pin resistance "L" R
COL
V
CO
= 0.5 V, V
DD
= 4.5 V, V
VM
= 0 V 2.5 5 10 k
Ω
7 4
DO pin resistance "H" R
DOH
V
DO
= 3.0 V, V
DD
= 3.5 V, V
VM
= 0 V 2.5 5 10 k
Ω
8 4
DO pin resistance "L" R
DOL
V
DO
= 0.5 V, V
DD
= V
VM
= 1.8 V 2.5 5 10 k
Ω
8 4
*1. Since products are not screen ed at high and lo w temperature, the specifica tion for this temperature ran ge is guaranteed
by design, not tested in production.
*2. In any conditions, load short-circuitin g detection voltage (VSHORT) is higher than discharge overcurrent d etection voltage
(VDIOV).
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series Rev.7.5_00
Seiko Instruments Inc.
10
2. Except detection delay time (Ta = −40°C to +85°CP
*1
P)
Table 10 (Ta = −40°C to +85°CP
*1
P unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition Test
Circuit
Dete ct i o n Volt a ge
Overcharge detection voltage V
CU
3.90 V to 4.50 V, adjustable V
CU
−
0.060 V
CU
V
CU
+
0.040 V 1 1
V
CL
≠
V
CU
V
CL
−
0.08 V
CL
V
CL
+
0.065 V 1 1
Overcharge release voltage V
CL
3.80 V to 4.43 V,
adjustable V
CL
= V
CU
V
CL
−
0.06 V
CL
V
CL
+
0.04 V 1 1
Overdischarge detection voltage V
DL
2.00 V to 3.00 V, adjustable V
DL
−
0.11 V
DL
V
DL
+
0.13 V 2 2
V
DU
≠
V
DL
V
DU
−
0.15 V
DU
V
DU
+
0.19 V 2 2
Overdischarge release voltage V
DU
2.00 V to 3.40 V,
adjustable V
DU
= V
DL
V
DU
−
0.11 V
DU
V
DU
+
0.13 V 2 2
Discharge overcurrent detection voltage V
DIOV
0.05 V to 0.30 V, adjustable V
DIOV
−
0.021 V
DIOV
V
DIOV
+
0.024 V 3 2
Load short-circuiting detection voltage
P
*2
V
SHORT
−
0.16 0.50 0.84 V 3 2
Charge overcurrent detection voltage V
CIOV
−
−
0.14
−
0.1
−
0.06 V 4 2
0 V Battery Charge Function
0 V battery charge starting charger voltage V
0CHA
0 V battery charge function
"available" 1.7
−
−
V 11 2
0 V battery charge inhibition battery voltage V
0INH
0 V battery charge function
"unavailable"
−
−
0.3
V 12 2
Internal Resistance
Resistance between VM pin and VDD pin R
VMD
V
DD
= 1.8 V, V
VM
= 0 V 78 300 1310
k
Ω
6 3
Resistance between VM pin and VSS pin R
VMS
V
DD
= 3.5 V, V
VM
= 1.0 V 7.2 20 44
k
Ω
6 3
Input Volt a g e
Operation voltage between VDD pin
and VSS pin V
DSOP1
−
1.5
−
8
V
−
−
Operation voltage between VDD pin
and VM pi n V
DSOP2
−
1.5
−
28
V
−
−
Input Current (With Power-down Function)
Current consumption during operation I
OPE
V
DD
= 3.5 V, V
VM
= 0 V 0.7 3.0 6.0
μ
A 5 2
Current consumption during power-down I
PDN
V
DD
= V
VM
= 1.5 V
−
−
0.3
μ
A 5 2
Input Current (Without Power-down Function)
Current consumption during operation I
OPE
V
DD
= 3.5 V, V
VM
= 0 V 0.7 3.0 6.0
μ
A 5 2
Current consumption during overdischarge I
OPED
V
DD
= V
VM
= 1.5 V 0.2 2.0 3.8
μ
A 5 2
Output Resistance
CO pin resistance "H" R
COH
V
CO
= 3.0 V, V
DD
= 3.5 V, V
VM
= 0 V 1.2 5 15
k
Ω
7 4
CO pin resistance "L" R
COL
V
CO
= 0.5 V, V
DD
= 4.5 V, V
VM
= 0 V 1.2 5 15
k
Ω
7 4
DO pin resistance "H" R
DOH
V
DO
= 3.0 V, V
DD
= 3.5 V, V
VM
= 0 V 1.2 5 15
k
Ω
8 4
DO pin resistance "L" R
DOL
V
DO
= 0.5 V, V
DD
= V
VM
= 1.8 V 1.2 5 15
k
Ω
8 4
*1. Since products are not screen ed at high and lo w temperature, the specifica tion for this temperature ran ge is guaranteed
by design, not tested in production.
*2. In an y conditions, load short-circuiting detec tion voltage (VSHORT) is higher than discharge overcurr ent detection voltage
(VDIOV).
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.5_00 S-8211C Series
Seiko Instruments Inc. 11
3. Detection delay time
3. 1 S-8211CAA, S-8211CAH, S-8211CAI, S-8211CAJ, S-8211CAK, S-8211CAL, S-8211CAM, S-8211CAN,
S-8211CAR, S-8211CAS, S-8211CAU, S-8211CAY, S-8211CAZ, S-8211CBA, S-8211CBB, S-8211CBF,
S-8211CBH, S-8211CBW, S-8211CCB, S-8211CCD, S-8211CCG, S-8211CCK, S-8211CCN, S-8211CCQ,
S-8211CCR, S-8211CCT, S-8211CCV, S-82 11CDA, S-8211CDB, S-8211CDC, S-8211C DG, S-8211CDO
Table 11
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition Test
Circuit
Delay Time (Ta =
+
25°C)
Overcharge detection delay time t
CU
−
0.96 1.2 1.4 s 9 5
Overdischarge detection delay time t
DL
−
120 150 180 ms 9 5
Discharge overcurrent detection delay time t
DIOV
−
7.2 9 11 ms 10 5
Load short-circuiting detection delay time t
SHORT
−
240 300 360
μ
s 10 5
Charge overcurrent detection delay time t
CIOV
−
7.2 9 11 ms 10 5
Delay Time (Ta =
−
40°C to
+
85°C)
P
*1
Overcharge detection delay time t
CU
−
0.7 1.2 2.0 s 9 5
Overdischarge detection delay time t
DL
−
83 150 255 ms 9 5
Discharge overcurrent detection delay time t
DIOV
−
5 9 15
ms 10 5
Load short-circuiting detection delay time t
SHORT
−
150 300 540
μ
s 10 5
Charge overcurrent detection delay time t
CIOV
−
5 9 15 ms 10 5
*1. Since products are not screen ed at high and lo w temperature, the specifica tion for this temperature ran ge is guaranteed
by design, not tested in production.
3. 2 S-8211CAB, S-8211CAV
Table 12
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition Test
Circuit
Delay Time (Ta =
+
25°C)
Overcharge detection delay time t
CU
−
0.96 1.2 1.4 s 9 5
Overdischarge detection delay time t
DL
−
120 150 180 ms 9 5
Discharge overcurrent detection delay time t
DIOV
−
7.2 9 11 ms 10 5
Load short-circuiting detection delay time t
SHORT
−
450 560 670
μ
s 10 5
Charge overcurrent detection delay time t
CIOV
−
7.2 9 11 ms 10 5
Delay Time (Ta =
−
40°C to
+
85°C)
P
*1
Overcharge detection delay time t
CU
−
0.7 1.2 2.0 s 9 5
Overdischarge detection delay time t
DL
−
83 150 255 ms 9 5
Discharge overcurrent detection delay time t
DIOV
−
5 9 15 ms 10 5
Load short-circuiting detection delay time t
SHORT
−
260 560 940
μ
s 10 5
Charge overcurrent detection delay time t
CIOV
−
5 9 15 ms 10 5
*1. Since products are not screen ed at high and lo w temperature, the specifica tion for this temperature ran ge is guaranteed
by design, not tested in production.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series Rev.7.5_00
Seiko Instruments Inc.
12
3. 3 S-8211CAD, S-8211CCW
Table 13
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition Test
Circuit
Delay Time (Ta =
+
25°C)
Overcharge detection delay time t
CU
−
115 143 172 ms 9 5
Overdischarge detection delay time t
DL
−
30 38 46 ms 9 5
Discharge overcurrent detection delay time t
DIOV
−
14.5 18 22 ms 10 5
Load short-circuiting detection delay time t
SHORT
−
240 300 360
μ
s 10 5
Charge overcurrent detection delay time t
CIOV
−
7.2 9 11 ms 10 5
Delay Time (Ta =
−
40°C to
+
85°C)
P
*1
Overcharge detection delay time t
CU
−
82 143 240 ms 9 5
Overdischarge detection delay time t
DL
−
20 38 65 ms 9 5
Discharge overcurrent detection delay time t
DIOV
−
10 18 30
ms 10 5
Load short-circuiting detection delay time t
SHORT
−
150 300 540
μ
s 10 5
Charge overcurrent detection delay time t
CIOV
−
5 9 15 ms 10 5
*1. Since products are not screen ed at high and lo w temperature, the specifica tion for this temperature ran ge is guaranteed
by design, not tested in production.
3. 4 S-8211CAE, S-8211CAT, S-8211CAX, S-8211CBR, S-8211CBV, S-8211CBZ , S-8211CCM, S-8211CCY,
S-8211CCZ
Table 14
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition Test
Circuit
Delay Time (Ta =
+
25°C)
Overcharge detection delay time t
CU
−
0.96 1.2 1.4 s 9 5
Overdischarge detection delay time t
DL
−
120 150 180 ms 9 5
Discharge overcurrent detection delay time t
DIOV
−
14.5 18 22 ms 10 5
Load short-circuiting detection delay time t
SHORT
−
240 300 360
μ
s 10 5
Charge overcurrent detection delay time t
CIOV
−
7.2 9 11 ms 10 5
Delay Time (Ta =
−
40°C to
+
85°C)
P
*1
Overcharge detection delay time t
CU
−
0.7 1.2 2.0 s 9 5
Overdischarge detection delay time t
DL
−
83 150 255 ms 9 5
Discharge overcurrent detection delay time t
DIOV
−
10 18 30
ms 10 5
Load short-circuiting detection delay time t
SHORT
−
150 300 540
μ
s 10 5
Charge overcurrent detection delay time t
CIOV
−
5 9 15 ms 10 5
*1. Since products are not screen ed at high and lo w temperature, the specifica tion for this temperature ran ge is guaranteed
by design, not tested in production.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.5_00 S-8211C Series
Seiko Instruments Inc. 13
3. 5 S-8211CAF, S-8211CAO, S-8211CAP, S-8211CAQ, S-8211CBD, S-8211CBJ, S-8211CBO, S-8211CCC,
S-8211CCF, S-8211CCI, S-8211CCS, S-8211CCU, S-8211CCX, S-8211CDE, S-8211CDF, S-8211CDH,
S-8211CDI
Table 15
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition Test
Circuit
Delay Time (Ta =
+
25°C)
Overcharge detection delay time t
CU
−
0.96 1.2 1.4 s 9 5
Overdischarge detection delay time t
DL
−
30 38 46 ms 9 5
Discharge overcurrent detection delay time t
DIOV
−
7.2 9 11 ms 10 5
Load short-circuiting detection delay time t
SHORT
−
240 300 360
μ
s 10 5
Charge overcurrent detection delay time t
CIOV
−
7.2 9 11 ms 10 5
Delay Time (Ta =
−
40°C to
+
85°C)
P
*1
Overcharge detection delay time t
CU
−
0.7 1.2 2.0 s 9 5
Overdischarge detection delay time t
DL
−
20 38 65 ms 9 5
Discharge overcurrent detection delay time t
DIOV
−
5 9 15
ms 10 5
Load short-circuiting detection delay time t
SHORT
−
150 300 540
μ
s 10 5
Charge overcurrent detection delay time t
CIOV
−
5 9 15 ms 10 5
*1. Since products are not screen ed at high and lo w temperature, the specifica tion for this temperature ran ge is guaranteed
by design, not tested in production.
3. 6 S-8211C AW, S-8211CD D
Table 16
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition Test
Circuit
Delay Time (Ta =
+
25°C)
Overcharge detection delay time t
CU
−
0.96 1.2 1.4 s 9 5
Overdischarge detection delay time t
DL
−
120 150 180 ms 9 5
Discharge overcurrent detection delay time t
DIOV
−
3.6 4.5 5.4 ms 10 5
Load short-circuiting detection delay time t
SHORT
−
240 300 360
μ
s 10 5
Charge overcurrent detection delay time t
CIOV
−
7.2 9 11 ms 10 5
Delay Time (Ta =
−
40°C to
+
85°C)
P
*1
Overcharge detection delay time t
CU
−
0.7 1.2 2.0 s 9 5
Overdischarge detection delay time t
DL
−
83 150 255 ms 9 5
Discharge overcurrent detection delay time t
DIOV
−
2.5 4.5 7.7
ms 10 5
Load short-circuiting detection delay time t
SHORT
−
150 300 540
μ
s 10 5
Charge overcurrent detection delay time t
CIOV
−
5 9 15 ms 10 5
*1. Since products are not screen ed at high and lo w temperature, the specifica tion for this temperature ran ge is guaranteed
by design, not tested in production.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series Rev.7.5_00
Seiko Instruments Inc.
14
3. 7 S-8211CBN
Table 17
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition Test
Circuit
Delay Time (Ta =
+
25°C)
Overcharge detection delay time t
CU
−
458 573 687 ms 9 5
Overdischarge detection delay time t
DL
−
120 150 180 ms 9 5
Discharge overcurrent detection delay time t
DIOV
−
3.6 4.5 5.4 ms 10 5
Load short-circuiting detection delay time t
SHORT
−
240 300 360
μ
s 10 5
Charge overcurrent detection delay time t
CIOV
−
3.6 4.5 5.4 ms 10 5
Delay Time (Ta =
−
40°C to
+
85°C)
P
*1
Overcharge detection delay time t
CU
−
334 573 955 ms 9 5
Overdischarge detection delay time t
DL
−
83 150 255 ms 9 5
Discharge overcurrent detection delay time t
DIOV
−
2.5 4.5 7.7
ms 10 5
Load short-circuiting detection delay time t
SHORT
−
150 300 540
μ
s 10 5
Charge overcurrent detection delay time t
CIOV
−
2.5 4.5 7.7 ms 10 5
*1. Since products are not screen ed at high and lo w temperature, the specifica tion for this temperature ran ge is guaranteed
by design, not tested in production.
3. 8 S-8211CCE, S-8211CCH, S-8211CCJ
Table 18
Item Symbol Condition Min. Typ. Max. Unit
Test
Condition Test
Circuit
Delay Time (Ta =
+
25°C)
Overcharge detection delay time t
CU
−
0.96 1.2 1.4 s 9 5
Overdischarge detection delay time t
DL
−
61 75 90 ms 9 5
Discharge overcurrent detection delay time t
DIOV
−
7.2 9 11 ms 10 5
Load short-circuiting detection delay time t
SHORT
−
240 300 360
μ
s 10 5
Charge overcurrent detection delay time t
CIOV
−
7.2 9 11 ms 10 5
Delay Time (Ta =
−
40°C to
+
85°C)
P
*1
Overcharge detection delay time t
CU
−
0.7 1.2 2.0 s 9 5
Overdischarge detection delay time t
DL
−
41 75 128 ms 9 5
Discharge overcurrent detection delay time t
DIOV
−
5 9 15
ms 10 5
Load short-circuiting detection delay time t
SHORT
−
150 300 540
μ
s 10 5
Charge overcurrent detection delay time t
CIOV
−
5 9 15 ms 10 5
*1. Since products are not screen ed at high and lo w temperature, the specifica tion for this temperature ran ge is guaranteed
by design, not tested in production.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.5_00 S-8211C Series
Seiko Instruments Inc. 15
Test Circuits
Caution Unless otherw ise specified, the outpu t voltage levels "H" and "L" at CO pin (VCO) and DO pin (VDO) are
judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with respect to
VVM and the DO pin level with respect to VSS.
1. Overcharge detection voltage, overcharge release voltage
(Test condition 1, test circuit 1)
Overcharge detection voltage (VCU) is defined as the voltage between the VDD pin and VSS pin at which VCO goes
from "H" to "L" when the voltage V1 is gradually increased from the starting condition of V1 = 3.5 V. Overcharge
release voltage (VCL) is defined as the voltage bet ween the VDD pin and VSS pin at which VCO goes from "L" to "H"
when the voltage V1 is then gradually decreased. Overcharge hysteresis voltage (VHC) is defined as the difference
between overcharg e detection voltage (VCU) and overcharge release voltage (VCL).
2. Overdischarge detection voltage, overdischarge release voltage
(Test condition 2, test circuit 2)
Overdischarge detection voltage (VDL) is defined as the volt age bet ween the VDD pin an d VSS pin at which VDO goes
from "H" to "L" when the voltage V1 is gradually decreased from the starting condition of V1 = 3.5 V, V2 = 0 V.
Overdischarge release voltage (V DU) is defined as the voltage between the VDD pin and VSS pin at which VDO goes
from "L" to "H" when the voltage V1 is then gradu ally incre ased. Overdisc harge h ysteresis voltag e (VHD) i s defined as
the difference between overdischarge release voltage (VDU) and overdischarge detection voltag e (VDL).
3. Discharge overcurrent detection voltage
(Test condition 3, test circuit 2)
Discharge overcurrent detection voltage (VDIOV) is defined as the voltage between the VM pin and VSS pin whose
delay time for changing VDO from "H" to "L" lies between the minimum and the maximum value of discharge
overcurrent delay time when the voltage V2 is increased rapidly (within 10 μs) from the starting condition of
V1 = 3.5 V, V2 = 0 V.
4. Load short-circuiting detection voltage
(Test condition 3, test circuit 2)
Load short-circuiting detection voltage (VSHORT) is defined as the voltage between the VM pin and VSS pin whose
delay time for changing VDO from "H" to "L" l ies bet ween the minimum and the ma ximum value of loa d short-circuiting
delay time when the voltage V2 is increased rapidly (within 10 μs) from the starting condition of V1 = 3.5 V, V2 = 0 V.
5. Charge overcurrent detection voltage
(Test condition 4, test circuit 2)
Charge overcurrent detection voltage (V CIOV) is defined as the voltage between the VM pin and VSS pin whos e delay
time for changing VCO from "H" to "L" l ies between the minimum and the maximum value of charge overcurre nt delay
time when the voltage V2 is decreased rapid ly (within 10 μs) from the starting condition of V1 = 3.5 V, V2 = 0 V.
6. Current consumption during operation
(Test condition 5, test circuit 2)
The current consumption during operation (IOPE) is the current that flows through the VDD pin (IDD) under the set
conditions of V1 = 3.5 V and V2 = 0 V (normal status).
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series Rev.7.5_00
Seiko Instruments Inc.
16
7. Current consumption during power-down, current consumption during overdischarge
(Test condition 5, test circuit 2)
7. 1 With power-down function
The current consumption during power-down (IPDN) is the current that flows through the VDD pin (IDD) under the set
condition of V1 = V2 = 1.5 V (overdischar ge status).
7. 2 Without power-down function
The current consumption during overdischarge (IOPED) is the current that flows through the VDD pin (IDD) under the
set condition of V1 = V2 = 1.5 V (overdisc harge status).
8. Resistance between VM pin and VDD pin
(Test condition 6, test circuit 3)
The resistance between VM pin and VDD pin (RVMD) is the resistance between VM pin and VDD pin under the set
conditions of V1 = 1.8 V, V2 = 0 V.
9. Resistance between VM pin and VSS pin
(Test condition 6, test circuit 3)
The resistance between VM pin and VSS pin (RVMS) is the resistance between VM pin and VSS pin under the set
conditions of V1 = 3.5 V, V2 = 1.0 V.
10. CO pin resistance "H"
(Test condition 7, test circuit 4)
The CO pin resistance "H" (RCOH) is the resistance at the CO pin under the set conditions of V1 = 3.5 V, V2 = 0 V,
V3 = 3.0 V.
11. CO pin resistance "L"
(Test condition 7, test circuit 4)
The CO pin resistance "L" (RCOL) is the resistance at the CO pin under the set conditions of V1 = 4.5 V, V2 = 0 V,
V3 = 0.5 V.
12. DO pin resistance "H"
(Test condition 8, test circuit 4)
The DO pin resistance "H" (RDOH) is the resistance at the DO pin under the set conditions of V1 = 3.5 V, V2 = 0 V,
V4 = 3.0 V.
13. DO pin resistance "L"
(Test condition 8, test circuit 4)
The DO pin resistance "L" (RDOL) is the resistance at the DO pin under the set conditions of V1 = 1.8 V, V2 = 0 V, V4 =
0.5 V.
14. Overcharge detection delay time
(Test condition 9, test circuit 5)
The overcharge detecti on delay time (tCU) is the time need ed for VCO to change from "H" to "L" just after the v oltage
V1 momentarily increases (within 10 μs) from overcharge detection voltage (VCU) − 0.2 V to overcharge detection
voltage (VCU) + 0.2 V under the set condition of V2 = 0 V.
15. Overdischarge detection delay time
(Test condition 9, test circuit 5)
The overdischarge detection delay time (tDL) is the time needed for VDO to change from "H" to "L" just after the voltage
V1 momentarily decreases (within 10 μs) from overdischarge detection voltage (VDL) + 0.2 V to overdischarge
detection voltage (VDL) − 0.2 V under the set condition of V2 = 0 V.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.5_00 S-8211C Series
Seiko Instruments Inc. 17
16. Discharge overcurrent detection delay time
(Test condition 10, test circuit 5)
Discharge overcurrent detection delay time (tDIOV) is the time needed for VDO to go to "L" after the voltage V2
momentarily increases (within 10 μs) from 0 V to 0.35 V under the set conditions of V1 = 3.5 V, V2 = 0 V.
17. Load short-circuiting detection delay time
(Test condition 10, test circuit 5)
Load short-circuiting detection delay time (tSHORT) is the time needed for VDO to go to "L" after the voltage V2
momentarily increases (within 10 μs) from 0 V to 1.6 V under the set conditions of V1 = 3.5 V, V2 = 0 V.
18. Charge overcurrent detection de lay time
(Test condition 10, test circuit 5)
Charge overcurrent detection delay time (tCIOV) is the time needed for VCO to go to "L" after the voltage V2
momentarily decreas es (within 10 μs) from 0 V to − 0.3 V under the set conditions of V1 = 3.5 V, V2 = 0 V.
19. 0 V battery charge starting charger v oltage (0 V battery charge function "av ailable")
(Test condition 11, test circuit 2)
The 0 V charge starting charger voltage (V 0CHA) is defined as the voltage between the V DD pin and VM pin at which
VCO goes to "H" (VVM + 0.1 V or higher) when the voltage V2 is gradually decreased from the starting condition of
V1 = V2 = 0 V.
20. 0 V battery charge inhibition battery voltage (0 V batte ry charge function "unavailable")
(Test condition 12, test circuit 2)
The 0 V battery charge inhibition battery voltage (V 0INH) is defined as the voltage bet ween the VDD pin and VSS pin
at which V CO goes to "H" (VVM + 0.1 V or higher) when the voltage V1 is gradually increased from the starting
conditions of V1 = 0 V, V2 = −4 V.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series Rev.7.5_00
Seiko Instruments Inc.
18
V V
DO
V V
CO
CO
DO
VSS
VDD
VM
S-8211C Serie s
R1 =
220 Ω
V1
COM
VV
DO
V V
CO
CO
DO
VSS
VDD
VM
S-8211C Series
V1
V2
COM
A
I
DD
Figure 5 Test Circuit 1 Figure 6 Test Circuit 2
CO DO
VSS
VDD
VM
S-8211C Series
V1
V2
COM
A
I
DD
AI
VM
AI
DO
A I
CO
CO
DO
VSS
VDD
VM
S-8211C Series
V1
V2
COM
V4 V3
Figure 7 Test Circuit 3 Figure 8 Test Circuit 4
CO DO
VSS
VDD
VM
S-8211C Series
V1
V2
COM
Oscilloscope Oscilloscope
Figure 9 Test Circuit 5
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.5_00 S-8211C Series
Seiko Instruments Inc. 19
Operation
Remark Refer to " Battery Protection IC Connection Example".
1. Normal status
The S-8211C Series monitors the voltage of the battery connected between the VDD pin and VSS pin and the
voltage difference between the VM pi n and VSS pin to control chargi ng and discharging. When the b attery voltage is
in the range from overdischarge detection voltage (VDL) to overcharge detection voltage (VCU), and the VM pin
voltage is in the range from the charge overcurrent detection voltage (VCIOV) to discharge overcurrent detection
voltage (VDIOV), the S-8211C Series turns both the charging and discharging contro l FETs on. This condition is called
the normal status, and in this condition charg ing and discharging can be carried out freely.
The resistance (RVMD) between the VM pin a nd VDD pin, and the res istance (RVMS) bet ween the VM pin and VSS pin
are not connected in the normal status.
Caution When the battery is conn ected fo r the first time, d ischar ging may not be enabled . In this cas e, short
the VM pin and VSS pin, or set the VM pin’s voltage at the level of the charge overcurrent detection
voltage (VCIOV) or more and the discharge overcurrent detection voltage (VDIOV) or less by
connecting the charg er. T h e S-8211C Series then returns to the normal status.
2. Overcharge status
When the battery voltage becomes higher than overcharge detection voltage (VCU) during charging in the normal
status and detection continues for the overcharge detection delay time (tCU) or longer, the S-8211C Series turns the
charging control FET off to stop charging. This condition is called the overcharge status.
The resistance (RVMD) between the VM pin a nd VDD pin, and the resistan ce (RVMS) bet ween the VM pin and VSS pin
are not connected in the overcharge status.
The overcharge status is released in the following two cases ( (1) and (2) ).
(1) In the case that the VM pin voltage is higher than or equal to the charge overcurrent detection voltage (VCIOV),
and is lower than the discharge overcurrent detection voltage (VDIOV), the S-8211C Series releases the
overcharge status when the battery voltage f alls b elow the overcharge release voltage (VCL).
(2) In the case that the VM pin voltage is higher than or equa l to the dischar ge overcurr ent det ection voltag e (V DIOV),
the S-8211C Series releases the overcharge status when the battery voltage falls below the overcharge
detection voltage (VCU).
The discharge is started by connectin g a load after the overcharge detection, the VM pin voltage rises more than
the VSS pin voltage due to the Vf voltage of the parasitic diode, because the discharge current flows through the
parasitic diode in the charging control FET. If this VM pin voltage is higher than or equal to the discharge
overcurrent detection voltag e (VDIOV), the S-8211 C Series re leas es the ov ercharg e status when the batter y voltage
is lower than or equal to the overchar ge detection voltage (VCU).
For the actual application boards, changing the batter y voltage and the charger voltage simultaneousl y enables to
measure the overcharge release voltage (VCL). In this case, the charger is always necessary to have the
equivalent voltage level to the battery voltage. The charger keeps VM pin voltage higher than or equal to the
charge overcurrent detection voltage (VCIOV) and lower than or equal to the discharge overcurrent detection
voltage (VDIOV). The S-8211C Series releases the overcharge status when the battery voltage falls below the
overcharge release voltage (V CL).
Caution 1. If the battery is charged to a voltage higher than overcharge detection voltage (VCU) and the
battery voltage does not fall below o vercharge detection voltage (VCU) even when a h eavy load is
connected, discharge overcurrent detection and load short-circuiting detection do not function
until the battery voltage falls below overcharge detection voltage (VCU). Since an actual battery
has an internal impedance of tens of mΩ, the battery voltage drops immediately after a heavy
load that causes o vercurren t is connected, and discharge overcurren t detection and load short-
circuiting detection functio n.
2. When a charger is connected after overcharge detection, the overcharge status is not released
even if the battery voltage is below overcharge release voltage (VCL). The overcharge status is
released when the VM pin voltage goes o ver the charge o vercurrent detection voltage (VCIOV) by
removing the charger.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series Rev.7.5_00
Seiko Instruments Inc.
20
3. Overdischarge status
3. 1 With power-down function
When the battery voltage falls below overdischarge detection voltage (VDL) during discharging in the normal status
and the detection continues for the overdischarge detection delay time (t DL) or longer, the S-8211C Series turns the
discharging control FET off to stop discharging. This condition is called the overdischarge status. Under the
overdischarge status, the VM pin voltag e is pulled up by the resistor bet ween the VM pin and VDD pin in the S-8211C
Series (RVMD). When voltage difference between the VM pin and VDD pin then is 1.3 V typ. or lower, the current
consumption is reduced to the power-down current consumption (IPDN). This condition is called the power-down
status.
The resistance (RVMS) between the VM pin and VSS pin is not connected in the power-down status and the
overdischarge status.
The power-down status is released when a charger is connected and the voltage difference bet ween the VM pin and
VDD pin becomes 1.3 V typ. or higher.
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is lower
than −0.7 V typ., the S-8211C Series releases the overdischarge status and turns the discharging FET on when the
battery voltage reaches overdischarge detection voltage (V DL) or higher.
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is not
lower than −0.7 V typ., the S-8211C Series releases the overdischarge status when the battery voltage reaches
overdischarge release volta ge (VDU) or higher.
3. 2 Without power-down function
When the battery voltage falls below overdischarge detection voltage (VDL) during discharging in the normal status
and the detection continues for the overdischarge detection delay time (t DL) or longer, the S-8211C Series turns the
discharging control FET off to stop discharging. This condition is called the overdischarge status. Under the
overdischarge status, the VM pin voltag e is pulled up by the resistor bet ween the VM pin and VDD pin in the S-8211C
Series (RVMD).
The resistance (RVMS) between the VM pin and VSS pin is not connected in the overdischarge status.
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is lower
than −0.7 V typ., the S-8211C Series releases the overdischarge status and turns the discharging FET on when the
battery voltage reaches overdischarge detection voltage (V DL) or higher.
When a battery in the overdischarge status is connected to a charger and provided that the VM pin voltage is not
lower than −0.7 V typ., the S-8211C Series releases the overdischarge status when the battery voltage reaches
overdischarge release volta ge (VDU) or higher.
4. Discharge overcurrent status (discharge overcurrent, load short-circuiting)
When a battery in the normal status is in the status where the VM pin voltage is equal to or higher than the discharge
overcurrent detection voltage (VDIOV) because the discharge current is hig her than the specified value and the status
lasts for the discharge overcurrent detection delay time (tDIOV), the discharge control FET is turned off and
discharging is stopped. This status is called the discharge overcurrent status.
In the discharge overcurrent status, the VM pin and VSS pin are shorted by the resistor between VM pin and VSS pin
(RVMS) in the S-8211C Series. However, the VM pin voltage is at the VDD potential due to the load as long as the load
is connected. When the load is disconnected completely, the VM pin returns to the VSS potential.
If the S-8211C Series detects that the VM pin voltage returns to discharge overcurrent detection voltage (VDIOV) or
lower, the discharge overcurrent status is restored to the normal status.
The S-8211C Series will be restored to the normal status from discharg e overcurrent detection status e ven when the
VM pin voltage becomes the discharge overcurrent detection voltage (VDIOV) or lower by connecting the charger.
The resistance (RVMD) between the VM pin and VDD pin is not connected in the discharge overcurrent status.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.5_00 S-8211C Series
Seiko Instruments Inc. 21
5. Charge overcurrent status
When a battery in the normal status is in the status where the VM pin voltage is lower than the charge overcurrent
detection voltage (VCIOV) because the charge current is higher than the specified value and the status lasts for the
charge overcurrent detection delay time (tCIOV), the charge control FET is turned off and charging is stopped. This
status is called the charge overcurrent status.
The S-8211C Series will be restored to the normal status from the charge overcurrent status when the VM pin voltage
returns to charge overcurrent detection volta ge (VCIOV) or higher by removing the charger.
The charge overcurrent detection function does not work in the overdischarge status.
The resistance (RVMD) between the VM pi n and VDD pin, a nd the resistance (R VMS) between the VM pin and VSS p in
are not connected in the charge overcurrent status.
6. 0 V Battery charge function "av ailable"
This function is used to recharge a connected battery whose voltage is 0 V due to self-discharge. When the 0 V
battery charge starting charger voltage (V0CHA) or a higher voltage is applied between the EB+ and EB− pins by
connecting a charger, the charging control FET gate is fixed to the VDD pin voltage.
When the voltage between the gate and source of the charging control FET becomes equal to or higher than the turn-
on voltage due to the charger voltage, the charging control FET is turned on to start charging. At this time, the
discharging control FET is off and the charging current flows through the internal parasitic diode in the discharging
control FET. When the battery voltage becomes equal to or higher than overdischarge release voltage (VDU), the
S-8211C Series enters the normal status.
Caution 1. Some battery providers do not recommend charging for a completely self-discharged battery.
Please ask the battery pro vider to determine whether to enable or inhib it the 0 V battery charge
function.
2. The 0 V battery charge function has higher priority than the charge overcurrent detection
function. Consequently, a product in which use of the 0 V battery charge function is enabled
charges a battery forcibly and the charge overcurrent cannot be detected when the battery
voltage is lower than overdischarge detect io n voltage (VDL).
7. 0 V Battery charge function "unav ailable"
This function inhibits recharg ing when a battery that is internally short-circ uited (0 V battery) is connected. When the
battery voltage is the 0 V battery charge inhibition battery voltage (V0INH) or lower, the charging control FET gate is
fixed to the EB− pin voltage to inhibit charging. When the battery voltage is the 0 V battery charge inhibition battery
voltage (V0INH) or higher, charging can be performed.
Caution Some battery providers do not recommend charging for a completely self-discharged battery.
Please ask the battery provider to determine whether to enable or inhibit the 0 V battery charge
function.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series Rev.7.5_00
Seiko Instruments Inc.
22
8. Delay circuit
The detection dela y times are determined by dividing a clock of approximately 3.5 kHz by the counter.
Remark 1. The discharge overcurrent detection delay time (tDIOV) and the load short-circuiting detection delay time
(tSHORT) start when the discharge overcurrent detection voltage (VDIOV) is detected. When the load short-
circuiting detection voltage (V SHORT) is detected over the lo ad short-circuiting detection delay time (tSHORT)
after the detection of discharge overcurrent detection voltage (VDIOV), the S-8211C Series turns the
discharging control FET off within the load short-circuiting detection delay time (tSHORT) from the time of
detecting VSHORT.
DO Pin
VM Pin
V
DD
V
DD
Time
V
DIOV
V
SS
V
SS
V
SHORT
Load short-circuiting detection delay time (t
SHORT
)
Time
t
D
0
≤
t
D
≤
t
SHORT
Figure 10
2. With power-down function
When any overcurrent is detected and the overcurrent continues for longer than the overdischarge
detection delay time (tDL) without the load being released, the status changes to the power-do wn status at
the point where the battery voltage falls below overdischarge detection voltage (VDL).
When the battery voltage falls below overdischarge detection voltage (VDL) due to overcurrent, the
S-8211C Series turns the discharging control FET off via overcurrent detection. In this case, if the
recovery of the battery voltage is so slo w that the battery voltage after the overdisc harge detection delay
time (tDL) is still lower than the overdischarge detection voltage (VDL), the S-8211C Series shifts to the
power-down status.
Without power-down function
When any overcurrent is detected and the overcurrent continues for longer than the overdischarge
detection delay time (tDL) without the load being released, the status changes to the overdischarge statu s
at the point where the battery voltage falls below overdischa rge detection voltage (VDL).
When the battery voltage falls below overdischarge detection voltage (VDL) due to overcurrent, the
S-8211C Series turns the discharging control FET off via overcurrent detection. In this case, if the
recovery of the battery voltage is so slo w that the battery voltage after the overdisc harge detection delay
time (tDL) is still lower than the overdischarge detection voltage (VDL), the S-8211C Series shifts to the
overdischarge status.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.5_00 S-8211C Series
Seiko Instruments Inc. 23
Timing Charts
1. Overcharge detection, overdischarge detection
VCU
VDU (VDL + VHD)
VDL
VCL (VCU − VHC)
Battery voltage
VSS
CO pin voltage
VDD
DO pin voltage
VSS
Charger connection
Load connection
Status*1
Overcharge detection delay time (tCU)Overdischarge detection delay time (
DL)
(1) (2) (1) (3) (1)
VDIOV
VSS
V
M pin voltage VDD
VEB−
VDD
VCIOV
VEB−
*1. (1): Normal status
(2): Overcharge status
(3): Overdischarge status
Remark The charger is assumed to charge with a constant current.
Figure 11
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series Rev.7.5_00
Seiko Instruments Inc.
24
2. Discharge overcurrent detection
V
DD
VSS
VSHORT
(1) (2) (1) (1)
Load s hor t-c ir cuiti ng
detection dela
y
time
(
tSHORT
)
(2)
VDIOV
Dis charge ov er curr ent
detection dela
y
time
(
tDIOV
)
VCU
VDU (VDL + VHD)
VDL
VCL (VCU − VHC)
Battery voltage
VSS
CO pin voltage
VDD
DO pin voltage
VSS
Load connection
Status*1
VM pin voltage
VDD
*1. (1): Normal status
(2): Discharge overcurrent status
Remark The charger is assumed to charge with a constant current.
Figure 12
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.5_00 S-8211C Series
Seiko Instruments Inc. 25
3. Charge overcurrent detection
V
DD
DO pin voltage
V
SS
V
DD
V
SS
CO pin voltage
V
DD
V
SS
VM pin voltage
V
CIOV
Status
*1
(
3
)
(
1
)
Charger connection
V
EB−
V
EB−
Charge overcurrent detection
delay time (t
CIOV
)
V
CU
V
DU
(V
DL
+ V
HD
)
V
DL
V
CL
(V
CU
− V
HC
)
Battery voltage
(
2
)
Load connection
(
1
) (
1
)
(
2
)
Overdischarge detection
dela
y
time
(
t
DL
)
Charge overcurrent detection
delay time (t
CIOV
)
*1. (1): Normal status
(2): Charge overcurrent status
(3): Overdischarge status
Remark The charger is assumed to charge with a constant current.
Figure 13
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series Rev.7.5_00
Seiko Instruments Inc.
26
Battery Protection IC Connection Example
R1
Battery C1
VSS DO
VDD
CO VM
S-8211C Series
FET1 FET2 EB−
EB+
R2
Figure 14
Table 19 Constants for Extern al Components
Symbol Part Purpose Min. Typ. Max. Remark
FET1 N-channel
MOS FET Discharge control − − −
Threshold voltage ≤ Overdischarge
detection voltage*1
P
Gate to source withstand voltage ≥
Charger voltageP
*2
FET2 N-channel
MOS FET Charge control − − −
Threshold voltage ≤ Overdischarge
detection voltage*1
Gate to source withstand voltage ≥
Charger voltage*2
R1 Resistor
ESD protection,
For power fluctuation 100 Ω 220 Ω 330 Ω
Resistance should be as small as
possible to avoid lowering the
overcharge detect ion accuracy due to
current consumption.*3
C1 Capacitor For power fluctuat ion 0. 022 μF 0.1 μF 1.0 μF Connect a capacitor of 0.022 μF or
higher between VDD pin and VSS pin.*4
R2 Resistor
Protection for reverse
connection of a
charger 300 Ω 2 kΩ 2 kΩ Select as large a resistance as possible
to prevent current when a charger is
connected in reverse.*5
*1. If the threshold voltage of an FET is low, the FET may not cut the charge current. If an FET with a threshold voltage
equal to or higher than the overdischarge detection voltage is used, discharging may be stopped before overdischarge
is detected.
*2. If the withstand voltage between the g ate and source is lower than the charger voltage, the FET may be dest r oyed.
*3. If a high resistor is connected to R1, the voltage between VDD pin and VSS pin may exceed the absolute maximum
rating when a charger is connect ed in reverse since the c urrent flo ws from the charger to the I C. Insert a resistor of 100
Ω or higher as R1 for ESD protection.
*4. If a capacitor of less than 0.022 μF is connected to C1, DO pin ma y oscillate when load short-circuiting is detected. Be
sure to connect a capacit or of 0.022 μF or higher to C1.
*5. If a resistor of 2 kΩ or higher is connected to R2, the charge current may not be cut when a high-voltage charger is
connected.
Caution 1. The above constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
example of connection. In addition, the example of connection shown above and the constant do not
guarantee proper operation. Perform thorough evaluation using the actual application to set the
constant.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.5_00 S-8211C Series
Seiko Instruments Inc. 27
Precautions
• The application conditions for the input voltage, output voltage, and load current should not exceed the package
power dissipation.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• SII claims no responsibility for any and all disputes arising out of or in connection with any infringement by products
including this IC of patents owned by a third party.
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series Rev.7.5_00
Seiko Instruments Inc.
28
Characteristics (Typical Data)
1. Current consumption
1. 1 IOPE vs. Ta 1. 2 IPDN vs. T a
−40 −25 0 25 50 7585
6
5
4
3
2
1
0
Ta [°C]
I
OPE
[μA]
−
40
−
25 0 25 50 7585
Ta [°C]
0.16
0.14
0.12
0.10
0.08
0.06
0
I
PDN
[μA]
0.04
0.02
1. 3 IOPE vs. V DD
0 2 4 6
V
DD
[V]
6
5
4
3
2
1
0
I
OPE
[μA]
8
2. Overcharge detection / release v oltage, overdischarge detection / release v oltage,
overcurrent detection v oltage, and delay time
2. 1 VCU vs. Ta 2. 2 VCL vs. T a
−40 −25 0 25 50 7585
Ta [°C]
4.350
4.345
4.340
4.335
4.330
4.325
4.300
V
CU
[V]
4.320
4.315
4.310
4.305
−
40
−
25 0 25 50 7585
Ta [°C]
4.125
4.115
4.105
4.095
4.085
4.075
4.025
V
CL
[V]
4.065
4.055
4.045
4.035
2. 3 VDU vs. Ta 2. 4 VDL vs. Ta
−40 −25 0 25 50 7585
Ta [°C]
2.95
2.94
2.93
2.92
2.91
2.90
2.85
V
DU
[V]
2.89
2.88
2.87
2.86
−
40
−
25 0 25 50 7585
Ta [°C]
2.60
2.58
2.56
2.54
2.52
2.50
2.40
V
DL
[V]
2.48
2.46
2.44
2.42
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.5_00 S-8211C Series
Seiko Instruments Inc. 29
2. 5 tCU vs. Ta 2. 6 tDL vs. T a
−40 −25 0 25 50 7585
Ta [°C]
1.50
1.45
1.40
1.35
1.30
1.25
1.00
t
CU
[s]
1.20
1.15
1.10
1.05
−
40
−
25 0 25 50 7585
Ta [°C]
200
190
180
170
160
150
100
t
DL
[ms]
140
130
120
110
2. 7 VDIOV vs. Ta 2. 8 tDIOV vs. V DD
−40 −25 0 25 50 7585
Ta [°C]
0.175
0.170
0.165
0.160
0.155
0.150
0.125
VDIOV [V]
0.145
0.140
0.135
0.130
3.0 3.5 4.0 4.5
VDD [V]
14
13
12
11
10
9
4
tDIOV [ms]
8
7
6
5
2. 9 tDIOV vs. Ta 2. 10 VCIOV vs. Ta
−40 −25 0 25 50 7585
Ta [°C]
14
13
12
11
10
9
4
tDIOV [ms]
8
7
6
5
−
40
−
25 0 25 50 7585
Ta [°C]
−
0.05
−
0.06
−
0.07
−
0.08
−
0.09
−
0.10
−
0.15
V
CIOV
[V]
−
0.11
−
0.12
−
0.13
−
0.14
2. 11 tCIOV vs. V DD 2. 12 tCIOV vs. T a
3.0 3.5 4.0 4.5
V
DD
[V]
14
13
12
11
10
9
4
t
CIOV
[ms]
8
7
6
5
14
13
12
11
10
9
4
t
CIOV
[ms]
8
7
6
5
−
40
−
25 0 25 50 7585
Ta [°C]
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series Rev.7.5_00
Seiko Instruments Inc.
30
2. 13 VSHORT vs. Ta 2. 14 tSHORT vs. VDD
0.75
0.70
0.65
0.60
0.55
0.50
0.25
V
SHORT
[V]
0.45
0.40
0.35
0.30
−40 −25 0 25 50 7585
Ta [°C]
3.0 3.5 4.0 4.5
V
DD
[V]
0.65
0.63
0.61
0.59
0.57
0.55
0.45
t
SHORT
[ms]
0.53
0.51
0.49
0.47
2. 15 tSHORT vs. Ta
−40 −25 0 25 50 7585
Ta [°C]
1.0
0.9
0.8
0.7
0.6
0.5
0
t
SHORT
[ms]
0.4
0.3
0.2
0.1
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.5_00 S-8211C Series
Seiko Instruments Inc. 31
3. CO pin / DO pin
3. 1 ICOH vs. V CO 3. 2 ICOL vs. V CO
0
−0.1
−0.2
−0.5
I
COH
[mA]
−0.3
−0.4
0 1 2 3 4
V
CO
[V]
0.5
0.4
0.3
0
I
COL
[mA]
0.2
0.1
0 1 2 3 4
V
CO
[V]
3. 3 IDOH vs. V DO 3. 4 IDOL vs. V DO
0 1 2 3 4
VDO [V]
0
−0.05
−0.10
−0.15
−0.30
IDOH [mA]
−0.20
−0.25
0 0.5 1.0 1.5
VDO [V]
0.20
0.15
0.10
0
IDOL [mA]
0.05
BATTERY PROTECTION IC FOR 1-CELL PACK
S-8211C Series Rev.7.5_00
Seiko Instruments Inc.
32
Marking Specifications
1. SOT-23-5
(1) to (3): Product code (refer to Product name vs. Product code)
(4): Lot number
123
45
Top view
(1) (2) (3) (4)
Product name vs. Product code
Product Code
Product Name (1) (2) (3)
S-8211CAA-M5T1x R Z A
S-8211CAB-M5T1x R Z B
S-8211CAD-M5T1x R Z D
S-8211CAE-M5T1x R Z E
S-8211CAF-M5T1x R Z F
S-8211CAH-M5T1x R Z H
S-8211CAI-M5T1x R Z I
S-8211CAJ-M5T1x R Z J
S-8211CAK-M5T1x R Z K
S-8211CAL-M5T1x R Z L
S-8211CAM-M5T1x R Z M
S-8211CAN-M5T1x R Z N
S-8211CAO-M5T1x R Z O
S-8211CAP-M5T1x R Z P
S-8211CAQ-M5T1x R Z Q
S-8211CAR-M5T1x R Z R
S-8211CAS-M5T1x R Z S
Product Code
Product Name (1) (2) (3)
S-8211CAT-M5T1x R Z T
S-8211CAU-M5T1x R Z U
S-8211CAV-M5T1x R Z V
S-8211CAY-M5T1x R Z Y
S-8211CAZ-M5T1x R Z Z
S-8211CBV-M5T1x R 7 V
S-8211CCD-M5T1U R 8 D
S-8211CCK-M5T1U R 8 K
S-8211CCQ-M5T1U R 8 Q
S-8211CCR-M5T1U R 8 R
S-8211CCT-M5T1U R 8 T
S-8211CCV-M5T1U R 8 V
S-8211CCW-M5T1U R 8 W
S-8211CDB-M5T1U R 6 B
S-8211CDD-M5T1U R 6 D
S-8211CDG-M5T1U R 6 G
Remark 1. x: G or U
2. Please select products of environme ntal cod e = U for Sn 100%, halogen-free products.
BATTERY PROTECTION IC FOR 1-CELL PACK
Rev.7.5_00 S-8211C Series
Seiko Instruments Inc. 33
2. SNT-6A
(1) to (3): Product code (refer to Product name vs. Product code)
(4) to (6): Lot number
Top view
132
645
(1) (2) (3)
(4) (5) (6)
Product name vs. Product code
Product Code
Product Name (1) (2) (3)
S-8211CAA-I6T1x R Z A
S-8211CAB-I6T1x R Z B
S-8211CAD-I6T1x R Z D
S-8211CAE-I6T1x R Z E
S-8211CAF-I6T1x R Z F
S-8211CAH-I6T1x R Z H
S-8211CAI-I6T1x R Z I
S-8211CAJ-I6T1x R Z J
S-8211CAK-I6T1x R Z K
S-8211CAL-I6T1x R Z L
S-8211CAM-I6T1x R Z M
S-8211CAN-I6T1x R Z N
S-8211CAO-I6T1x R Z O
S-8211CAP-I6T1x R Z P
S-8211CAQ-I6T1x R Z Q
S-8211CAR-I6T1x R Z R
S-8211CAS-I6T1x R Z S
S-8211CAT-I6T1x R Z T
S-8211CAU-I6T1x R Z U
S-8211CAV-I6T1x R Z V
S-8211CAW-I6T1x R Z W
S-8211CAX-I6T1x R Z X
S-8211CAY-I6T1x R Z Y
S-8211CAZ-I6T1x R Z Z
S-8211CBA-I6T1x R 7 A
S-8211CBB-I6T1x R 7 B
S-8211CBD-I6T1x R 7 D
S-8211CBF-I6T1x R 7 F
S-8211CBH-I6T1x R 7 H
S-8211CBJ-I6T1x R 7 J
Product Code
Product Name (1) (2) (3)
S-8211CBN-I6T1x R 7 N
S-8211CBO-I6T1x R 7 O
S-8211CBR-I6T1x R 7 R
S-8211CBV-I6T1x R 7 V
S-8211CBW-I6T1x R 7 W
S-8211CBZ-I6T1x R 7 Z
S-8211CCB-I6T1x R 8 B
S-8211CCC-I6T1x R 8 C
S-8211CCD-I6T1x R 8 D
S-8211CCE-I6T1x R 8 E
S-8211CCF-I6T1x R 8 F
S-8211CCG-I6T1x R 8 G
S-8211CCH-I6T1x R 8 H
S-8211CCI-I6T1x R 8 I
S-8211CCJ-I6T1U R 8 J
S-8211CCM-I6T1x R 8 M
S-8211CCN-I6T1x R 8 N
S-8211CCS-I6T1U R 8 S
S-8211CCU-I6T1U R 8 U
S-8211CCX-I6T1U R 8 X
S-8211CCY-I6T1U R 8 Y
S-8211CCZ-I6T1U R 8 Z
S-8211CDA-I6T1U R 6 A
S-8211CDC-I6T1U R 6 C
S-8211CDE-I6T1U R 6 F
S-8211CDF-I6T1U R 6 E
S-8211CDH-I6T1U R 6 H
S-8211CDI-I6T1U R 6 I
S-8211CDO-I6T1U R 6 O
Remark 1. x: G or U
2. Please select products of environme ntal cod e = U for Sn 100%, halogen-free products.
No.
TITLE
SCALE
UNIT
Seiko Instruments Inc.
2.9±0.2
1.9±0.2
0.95±0.1
0.4±0.1
0.16 +0.1
-0.06
123
4
5
No. MP005-A-P-SD-1.2
MP005-A-P-SD-1.2
SOT235-A-PKG Dimensions
mm
No.
TITLE
SCALE
UNIT
Seiko Instruments Inc.
ø1.5 +0.1
-0 2.0±0.05
ø1.0 +0.2
-0 4.0±0.1
1.4±0.2
0.25±0.1
3.2±0.2
123
45
No. MP005-A-C-SD-2.1
MP005-A-C-SD-2.1
SOT235-A-Carrier Tape
Feed direction
4.0±0.1(10 pitches:40.0±0.2)
mm
No.
TITLE
SCALE
UNIT
Seiko Instruments Inc.
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY. 3,000
No. MP005-A-R-SD-1.1
MP005-A-R-SD-1.1
SOT235-A-Reel
Enlarged drawing in the central part
mm
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-6A-A-PKG Dimensions
PG006-A-P-SD-2.0
No. PG006-A-P-SD-2.0
0.2±0.05
0.48±0.02
0.08 +0.05
-0.02
0.5
1.57±0.03
123
45
6
Feed direction
4.0±0.1
2.0±0.05
4.0±0.1
ø1.5 +0.1
-0
ø0.5
1.85±0.05 0.65±0.05
0.25±0.05
5°
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
PG006-A-C-SD-1.0
SNT-6A-A-Carrier Tape
No. PG006-A-C-SD-1.0
+0.1
-0
1
2
4
3
56
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY.
No. PG006-A-R-SD-1.0
PG006-A-R-SD-1.0
Enlarged drawing in the central part
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-6A-A-Reel
5,000
No.
TITLE
SCALE
UNIT mm
SNT-6A-A-Land Recommendation
Seiko Instruments Inc.
PG006-A-L-SD-4.0
No. PG006-A-L-SD-4.0
0.3
0.2
0.52
1.36
0.52
1
2
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
1. (0.25 mm min. / 0.30 mm typ.)
2. (1.30 mm ~ 1.40 mm)
0.03 mm
SNT
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package ( 1.30 mm ~ 1.40 mm ).
1.
2.
※1. 䇋⊼ᛣ⛞Ⲭ῵ᓣⱘᆑᑺ(0.25 mm min. / 0.30 mm typ.)DŽ
※2. 䇋࣓৥ᇕ㺙Ё䯈ᠽሩ⛞Ⲭ῵ᓣ (1.30 mm ~ 1.40 mm)DŽ
⊼ᛣ1. 䇋࣓೼󰶆㛖ൟᇕ㺙ⱘϟ䴶ࠋϱ㔥ǃ⛞䫵DŽ
2. ೼ᇕ㺙ϟǃᏗ㒓Ϟⱘ䰏⛞㝰ᑺ (Ң⛞Ⲭ῵ᓣ㸼䴶䍋) 䇋᥻ࠊ೼0.03 mmҹϟDŽ
3. ᥽㝰ⱘᓔষሎᇌᓔষԡ㕂䇋Ϣ⛞Ⲭ῵ᓣᇍ唤DŽ
4. 䆺㒚ݙᆍ䇋খ䯙 "SNTᇕ㺙ⱘᑨ⫼ᣛ"DŽ
www.sii-ic.com
• The information described herein is subject to change without notice.
• Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
• When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the approp riate governmental authority.
• Use of the information described herein for other purposes and/or reproduction or copying without the
express permissi on of Seiko Instruments Inc. is strictly prohibited.
• The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, vehicle equipment,
in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment, without prior
written permission of Seiko Instrum ents Inc.
• The products described herein are not designed to be radiation-proof.
• Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or comm unity damage that may ensue.