SEMICONDUCTOR 2N5401S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. E B L L FEATURES D *High Collector Breakdwon Voltage 2 H A 3 G : VCBO=-160V, VCEO=-150V *Low Leakage Current. 1 : ICBO=-50nA(Max.) @VCB=-120V *Low Saturation Voltage Q P P J K C *Low Noise : NF=8dB (Max.) N : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER 2. BASE MAXIMUM RATING (Ta=25) CHARACTERISTIC 3. COLLECTOR SYMBOL RATING UNIT Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -150 V Emitter-Base Voltage VEBO -5 V Collector Current IC -600 mA Base Current IB -100 mA PC * 350 mW Tj 150 Tstg -55150 Collector Power Dissipation Junction Temperature Storage Temperature Range SOT-23 Marking Lot No. Note : * Package Mounted On 99.5% Alumina 10x8x0.6) Type Name 1999. 12. 22 Revision No : 2 ZE 1/2 2N5401S ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL IEBO Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter * Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Emitter * * Saturation Voltage Base-Emitter Saturation Voltage MIN. TYP. MAX. UNIT VCB=-120V, IE=0 - - -50 nA VCB=-120V, IE=0, Ta=100 - - -50 A VEB=-3V, IC=0 - - -50 nA ICBO Collector Cut-off Current DC Current Gain TEST CONDITION * V(BR)CBO IC=-0.1mA, IE=0 -160 - - V V(BR)CEO IC=-1mA, IB=0 -150 - - V V(BR)EBO IE=-10A, IC=0 -5 - - V hFE(1) VCE=-5V, IC=-1mA 50 - - hFE(2) VCE=-5V, IC=-10mA 60 - 240 hFE(3) VCE=-5V, IC=-50mA 50 - - VCE(sat)1 IC=-10mA, IB=-1mA - - -0.2 VCE(sat)2 IC=-50mA, IB=-5mA - - -0.5 VBE(sat)1 IC=-10mA, IB=-1mA - - -1.0 VBE(sat)2 IC=-50mA, IB=-5mA - - -1.0 100 - 300 MHz - - 6 pF 40 - 200 - - 8 V V fT Transition Frequency VCE=-10V, IC=-10mA, f=100MHz Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Small-Signal Current Gain hfe VCE=-10V, IC=-1mA, f=1kHz Noise Figure NF VCE=-5V, IC=-250A dB Rg=1k, f=10Hz15.7kHz * Pulse Test : Pulse Width300S, Duty Cycle2%. 1999. 12. 22 Revision No : 2 2/2