1999. 12. 22 1/2
SEMICONDUCTOR
TECHNICAL DATA
2N5401S
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 2
GENERAL PURPOSE APPLICATION.
HIGH VOLTAGE APPLICATION.
FEATURES
·High Collector Breakdwon Voltage
: VCBO=-160V, VCEO=-150V
·Low Leakage Current.
: ICBO=-50nA(Max.) @VCB=-120V
·Low Saturation Voltage
: VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA
·Low Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25℃)
DIM MILLIMETERS
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.40+0.15/-0.05
2.40+0.30/-0.20
G 1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
Q 0.1 MAX
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
23
H
G
A
N
C
B
D
1.30 MAX
LL
PP
P7
+
_
Q
1. EMITTER
2. BASE
3. COLLECTOR
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -150 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC-600 mA
Base Current IB-100 mA
Collector Power Dissipation PC *350 mW
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
Note : * Package Mounted On 99.5% Alumina 10×8×0.6㎜)
Type Name
Marking
Lot No.
ZE
1999. 12. 22 2/2Revision No : 2
ELECTRICAL CHARACTERISTICS (Ta=25℃)
2N5401S
* Pulse Test : Pulse Width≦300μS, Duty Cycle≦2%.
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO
VCB=-120V, IE=0 - - -50 nA
VCB=-120V, IE=0, Ta=100℃- - -50 μA
Emitter Cut-off Current IEBO VEB=-3V, IC=0 - - -50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=-0.1mA, IE=0 -160 - - V
Collector-Emitter *
Breakdown Voltage V(BR)CEO IC=-1mA, IB=0 -150 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10μA, IC=0 -5 - - V
DC Current Gain *
hFE(1) VCE=-5V, IC=-1mA 50 - -
hFE(2) VCE=-5V, IC=-10mA 60 - 240
hFE(3) VCE=-5V, IC=-50mA 50 - -
Collector-Emitter *
Saturation Voltage
VCE(sat)1 IC=-10mA, IB=-1mA - - -0.2
V
VCE(sat)2 IC=-50mA, IB=-5mA - - -0.5
Base-Emitter *
Saturation Voltage
VBE(sat)1 IC=-10mA, IB=-1mA - - -1.0
V
VBE(sat)2 IC=-50mA, IB=-5mA - - -1.0
Transition Frequency fTVCE=-10V, IC=-10mA, f=100MHz 100 - 300 MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 6 pF
Small-Signal Current Gain hfe VCE=-10V, IC=-1mA, f=1kHz 40 - 200
Noise Figure NF VCE=-5V, IC=-250μA
Rg=1kΩ, f=10Hz～15.7kHz - - 8 dB
