March 2008 Rev 6 1/16
16
SD2931-10
RF power transistors
HF/VHF/UHF N-channel MOSFETs
Features
■Gold metallization
■Excellent thermal stability
■Common source configuration
■POUT = 150 W min. with 14 dB gain @ 175 MHz
■Thermally enhanced packaging for lower
junction temperatures
Description
The SD2931-10 is a gold metallized N-channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2931
MOSFET, it is intended for use in 50 V dc large
signal applications up to 230 MHz.
The SD2931-10 is mechanical compatible to the
SD2931 but offers in addition a better thermal
capability (25 % lower thermal resistance),
representing the best-in-class transistors for ISM
applications, where reliability and ruggedness are
critical factors.
Figure 1. Pin connection
M174
Epoxy sealed
1
3
4
2
1. Drain
2. Source
3. Gate
4. Source
www.st.com
Table 1. Device summary
Order code Marking Package Packaging
SD2931-10 SD2931-10 M174 Plastic tray
Contents SD2931-10
2/16
Contents
1 Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 Typical performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6 Circuit layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
7 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
SD2931-10 Electrical data
3/16
1 Electrical data
1.1 Maximum ratings
1.2 Thermal data
Table 2. Absolute maximum ratings (TCASE = 25 °C)
Symbol Parameter Value Unit
V(BR)DSS(1)
1. TJ = 150°C
Drain source voltage 125 V
VDGR Drain-gate voltage (RGS = 1 MΩ)125V
VGS Gate-source voltage ±20 V
IDDrain current 20 A
PDISS Power dissipation 389 W
TJMax. operating junction temperature 200 °C
TSTG Storage temperature -65 to +150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Junction - case thermal resistance 0.45 °C/W
Electrical characteristics (TCASE = +25 ºC) SD2931-10
4/16
2 Electrical characteristics (TCASE = +25 ºC)
2.1 Static
2.2 Dynamic
Table 4. Static (per side)
Symbol Test conditions Min Typ Max Unit
V(BR)DSS VGS = 0 V IDS = 100 mA 125 V
IDSS VGS = 0 V VDS = 50 V 50 µA
IGSS VGS = 20 V VDS = 0 V 250 nA
VGS(Q) (1)
1. VGS(Q) sorted with alpha/numeric code marked on unit.
VDS = 10 V ID = 250 mA See table below V
VDS(ON) VGS = 10 V ID = 10 A 3.0 V
GFS VDS = 10 V ID = 5 A 5 6 mho
CISS VGS = 0 V VDS = 50 V f = 1 MHz 480 pF
COSS VGS = 0 V VDS = 50 V f = 1 MHz 190 pF
CRSS VGS = 0 V VDS = 50 V f = 1 MHz 18 pF
Table 5. Dynamic
Symbol Test conditions Min Typ Max Unit
POUT VDD = 50 V IDQ = 250 mA f = 175 MHz 150 W
GPS VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 14 15 dB
nDVDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 55 65 %
Load
mismatch
VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz
All phase angles 10:1 VSWR
Table 6. VGS sorts
A 2.0 - 2.1 K 2.9 - 3.0
B 2.1 - 2.2 L 3.0 - 3.1
C 2.2 - 2.3 M 3.1 - 3.2
D 2.3 - 2.4 N 3.2 - 3.3
E 2.4 - 2.5 P 3.3 - 3.4
F 2.5 - 2.6 Q 3.4 - 3.5
G 2.6 - 2.7 R 3.5 - 3.6
H 2.7 - 2.8 S 3.6 - 3.7
J 2.8 - 2.9
SD2931-10 Impedance data
5/16
3 Impedance data
Figure 2. Impedance data
Table 7. Impedance data
Freq ZIN (Ω)Z
DL (Ω)
30 MHz 1.7 - j 5.7 6.8 + j 0.9
175 MHz 1.2 - j 2.0 2.0 + j 2.4
Typical Drain
Load Impedance
Typical Input
Impedance
G
Zin
ZDL
D
S
Typical performance SD2931-10
6/16
4 Typical performance
Figure 3. Capacitance vs drain-source
voltage
Figure 4. Drain current vs gate voltage
Figure 5. Gate-source voltage vs case
temperature
Figure 6. Maximum thermal resistance vs
case temperature
Figure 7. Safe operating area
0 1020304050
VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
10000
C, CAPACITANCE (pF)
Ciss
Coss
Crss
f =1MHz
22.533.544.555.56
VGS, GATE-SOURCE VOLTAGE (V)
0
5
10
15
20
ID, DRAIN CURRENT (A)
Tc=-20 °C
Tc=+25 °C
Tc=+80 °C
VDS = 10 V
-25 0 25 50 75 100
Tc, CASE TEMPERATURE (°C)
0.8
0.84
0.88
0.92
0.96
1
1.04
1.08
1.12
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
Id =.25A
Id =.1A
Id =1A
Id =2A
Id =4A
Id =11A
Id =5A
Id =7A
Id =9A
Id =10A
Vds= 10 V
25 35 45 55 65 75 85
Tc, CASE TEMPERATURE (°C)
0.44
0.48
0.52
0.56
0.6
RTH(j-c) (°C/W)
1 10 100 1000
Vds(V)
1
10
100
Ids(A)
(1) Current in this area may be limited by Rds(on)
(1)
SD2931-10 Typical performance 175 MHz
7/16
5 Typical performance 175 MHz
Figure 8. Output power vs input power Figure 9. Output power vs input power
Figure 10. Power gain vs output power Figure 11. Efficiency vs output power
0 5 10 15 20 25
Pin, INPUT POWER (W)
0
30
60
90
120
150
180
210
240
270
Pout, OUTPUT POWER (W)
f= 175MHz
Idq= 250mA
Vdd= 40V
Vdd= 50V
0 5 10 15 20 25
Pin, INPUT POWER(W)
0
30
60
90
120
150
180
210
240
270
Pout, OUTPUT POWER (W)
Vdd= 50V
Idq= 250mA
f= 175MHz
Tc =-20 °C
Tc =+25 ° C
Tc =+80 °C
0 50 100 150 200 250
Pout, OUTPUT POWER (W)
6
8
10
12
14
16
18
Gp, POWER GAIN (dB)
Vdd=50V
Idq=250mA
f=175Mhz
0 50 100 150 200 250
Pout, OUTPUT POWER (W)
20
30
40
50
60
70
80
Nd, EFFICIENCY (%)
Vdd=50V
Idq=250mA
f=175Mhz
Figure 12. Output power vs supply voltage Figure 13. Drain current vs gate-source
voltage
24 28 32 36 40 44 48 52
Vdd,DRAIN VOLTAGE(V)
0
30
60
90
120
150
180
210
240
270
Pout,OUTPUT POWER(W)
Pin =2.5W
Pin =5W
Pin =10W
Idq= 250mA
f= 175MHz
2 2.5 3 3.5 4 4.5 5 5.5 6
VGS, GATE-SOURCE VOLTAGE (V)
0
5
10
15
20
ID, DRAIN CURRENT (A)
Tc=-20 °C
Tc=+25 °C
Tc=+80 °C
Test circuit SD2931-10
8/16
6 Test circuit
Figure 14. 175 MHz test circuit schematic (production test circuit)
Note: All dimensions in inches
REF. 1021579C
Table 8. Component part list
Component Description
T1 4:1 transformer, 25 ohm flexible coax .090 OD 6” long
T2 1:4 transformer, 25 ohm semi-rigid coax .141 OD 6” long
FB1 Toroid X 2, 0.5” OD .312” ID 850µ 2 turns
FB2, FB3 VK200
FB4 Shield bead, 1” OD 0.5” ID 850µ 3 turns
L1 1/4 wave choke, 50 ohm semi-rigid coax .141 OD 12” Long
PCB 0.62” woven fiberglass, 1 oz. copper, 2 sides, εr = 2.55
R1, R3 470 ohm 1 W chip resistor
R2 360 ohm 1/2 W resistor
R4 20 Kohm 10 turn potentiometer
R5 560 ohm 1 W resistor
C1, C11 470 pF ATC chip cap
C2 43 pF ATC chip cap
C3, C8, C9 Arco 404, 12-65 pF
C4 Arco 423, 16-100 pF
SD2931-10 Test circuit
9/16
Figure 15. 175 MHz test circuit photomaster
Component Description
C5 120 pF ATC chip cap
C6 0.01 µF ATC chip cap
C7 30 pF ATC chip cap
C10 91 pF ATC chip cap
C12, C15 1200 pF ATC chip cap
C13, C14,C16, C17 0.01 µF / 500 V chip cap
C18 10 µF 63 V electrolytic capacitor
Table 8. Component part list (continued)
6.4 inches
4 inches
Test circuit SD2931-10
10/16
Figure 16. 175 MHz test circuit
SD2931-10 Typical performance 30 MHz
11/16
7 Typical performance 30 MHz
Figure 17. Output power vs input power Figure 18. Power gain vs output power
Figure 19. Efficiency vs output power Figure 20. Output power vs supply voltage
0 0.1 0.2 0.3 0.4 0.5
Pin, INPUT POWER (W)
0
50
100
150
200
250
Pout, OUTPUT POWER (W)
Vdd = 50 V
Vdd = 40 V
f = 30 MHz
IDQ = 250 mA
0 40 80 120 160 200
Pout, OUTPUT POWER (W)
24
25
26
27
28
29
30
PG, POWER GAIN (dB)
f = 30 MHz
VDD = 50 V
IDQ = 250 mA
0 40 80 120 160 200
Pout, OUTPUT POWER (W)
0
10
20
30
40
50
60
70
Efficiency (%)
f = 30 MHz
VDD = 50 V
IDQ = 250 mA
24 28 32 36 40 44 48 52
VDD(V)
0
50
100
150
200
Pout(W)
f = 30 MHz
IDQ = 250 mA
Pin=.31 W
Pin=.22 W
Pin=.13 W
Figure 21. Output power vs gate voltage
0123456
VGS GATE-SOURCE VOLTAGE (V)
0
50
100
150
200
Pout, OUTPUT POWER (W)
VDD = 50 V
IDQ = 250 mA
f = 30 MHz
Pin = Constant
T= -20 °C
T= +25 °C
T= +80 °C
Test circuit 30 MHz SD2931-10
12/16
8 Test circuit 30 MHz
Figure 22. 30 MHz test circuit schematic (engineering test circuit)
Figure 23. 30 MHz test circuit component part list
Symbol Description
T1 9:1 transformer, 25 Ω flexible coax with extra shield .090 OD 15” long
T2 1:4 transformer, 50 Ω flexible coax .225 OD 15” long
FB1 Toroid 1.7” OD .30” ID 220 µ 4 turns
FB2 Surface mount EMI shield bead
FB3 Toroid 1.7” OD .300” ID 220µ 3 turns
RFC1 Toroid 0.5” OD 0.30” ID 125µ 4 turns 12 awg wire
PCB 0.62” Woven Fiberglass, 1 oz. Copper, 2 Sides, εr = 2.55
R1, R3 1 KΩ 1 W chip resistor
R2 680 Ω 3 W wirewound resistor
C1,C4,C6,C7,C8,C
9,
C11,C12,C13
0.1 µF ATC chip cap
C2,C3 750 pF ATC chip cap
C5 470 pF ATC chip cap
C10 10 µF 63 V electrolytic capacitor
C14 100 µF 63 V electrolytic capacitor
SD2931-10 Package mechanical data
13/16
9 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second Level Interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
Package mechanical data SD2931-10
14/16
Figure 24. Package dimensions
Table 9. M174 (0.500 DIA 4/L N/HERM W/FLG) mechanical data
Dim.
mm. Inch
Min Typ Max Min Typ Max
A 5.56 5.584 0.219 0.230
B3.18 0.125
C 6.22 6.48 0.245 0.255
D 18.28 18.54 0.720 0.730
E3.18 0.125
F 24.64 24.89 0.970 0.980
G 12.57 12.83 0.495 0.505
H 0.08 0.18 0.003 0.007
I 2.11 3.00 0.083 0.118
J 3.81 4.45 0.150 0.175
K7.110.280
L 25.53 26.67 1.005 1.050
M 3.05 3.30 0.120 0.130
Controlling Dimension: Inches 1011000D
SD2931-10
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