ky SGS-THOMSON MICROELECTRONICS BCW61 BCX71 SMALL SIGNAL PNP TRANSISTORS Type Marking BCW61A BA BCW61B BB BCW61C BC BCX71G BG BCX71H BH BCX71J BJ a SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR SOT-23 APPLICATION IN SURFACE MOUNTING CIRCUITS LOWLEVELAF AMPLIFICATION AND SWITCHING a NPN COMPLEMENTS ARE RESPECTIVELY BCW60 AND BCX70 INTERNAL SCHEMATIC DIAGRAM Co (2) (1) B EO(3) $C08810 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit BCW61 BCX71 Vces _|Collector-Emitter Voltage (Vac = 0) -32 -45 Vv Vceo {Collector-Emitter Voltage (Ip = 0) -32 -45 Vv Veso | Emitter-Base Voltage (Ic = 0) -5 Vv Ic Collector Current -0.2 A Ip Base Current -0.05 A Prot | Total Dissipation at T. = 25 C 310 mW Tstg |Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature 150 C March 1996 1/5 Me 79e%e37 CO76014 767 BCW61/BCX71 THERMAL DATA Rinj-amb |Thermal Resistance Junction-Ambient Max 450 C/w Rinj-sh |Thermal Resistance Junction-Substrate Max 320 C/W e Mounted on a ceramic substrate area = 0.7 mm x 2.5 cm* ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Ices Collector Cut-off Vce = Rated Vces -20 nA Current (Vee = 0) Vce = Rated Vces Tamb = 150 C -20 HA 1EBO Collector Cut-off Vep =-4V -20 nA Current (le = 0) Visryceo* | Collector-Emitter Ilo =-2 mA Breakdown Voltage for BCW61 -32 Vv (Ip = 0) for BCX71 -45 Vv Visryeso | Emitter-Base lo =-1 HA - Vv Breakdown Voltage (Ic = 0) Vce(saty* |Collector-Emitter lc =-10mA_ Ip =-0.25 mA -0.25 Vv Saturation Voltage Ic =-50mA Ip =-1.25 mA -0.55 Vv Vee(saty* |Collector-Base lc =-10 MA Ip = -0.25 mA -0.85 Vv Saturation Voltage Ic =-50mA Ip =-1.25 mA -1.05 Vv VeE(on) |Collector-Base On Io =-2 MA Voce = -5 V -0.6 -0.75 Vv Voltage Nee* DC Current Gain Io =-0.01 MA Vce =-5 V for group A, G 140 for group B, H 30 200 for group C, J 40 270 Io = -2 MA Voce =-5 V for group A, G 120 220 for group B, H 180 310 for group C, J 250 460 Ic = -50 mA Voce =-1V for group A, G 60 for group B, H 80 for group C, J 100 fr Transition Frequency Ic = -10 MA Vce = -5V f = 100MHz 180 MHz Ccp Collector Base le =0 Vocp =-10V f=1MHz 6 pF Capacitance Ces Emitter Base le =0 Vep=-0.5V f=1 MHz 11 pF Capacitance NF Noise Figure Voe=-5V Ic =-0.2 mA f= 1KHz 2 6 dB Af =200 Hz Rge=2KQ hie Input Impedance VocE=-5V Ic =-2mA_ f= 1KHz for group A, G 1.6 2.7 4.6 KQ for group B, H 2.5 3.6 6 KQ for group C, J 3.2 4.5 8.5 KQ Hre Reverse Voltage Ratio |[Vce=-5 V Ic =-2mA_ f= 1KHz for group A, G 1.5 10* for group B, H 2 10% for group C, J 2 10% * Pulsed: Pulse duration = 300 ps, duty cycle < 2% 2/5 ky See THOMSON Me 7929237? 0078015 13 ELECTRICAL CHARACTERISTICS (Continued) BCW61/BCX71 Symbol Parameter Test Conditions Min. | Typ. | Max. Unit te Small Signal Current Vce=-5V Ic=-2mA_ f= 1KHz Gain for group A, G 200 for group B, H 260 for group C, J 330 Hoe Output Admittance Voe=-5V Ic =-2mA_ f= 1KHz for group A, G 18 30 ps for group B, H 24 50 Hs for group C, J 30 60 Hs ta Delay Time Ic =-10mA [pi = Ip2 = -1MA 35 ns : ; Vea =-3.6V Ri=Re=5 KQ tr Rise Time R. = 9909 50 ns ton Switching On Time 85 150 ns ts Storage Time 400 ns tr Fali Time 80 ns tort Switching Off Time 480 800 ns * Pulsed: Pulse duration = 300 us, duty cycle < 2% SGS-THOMSON 36 ii BICAORLECTHORICS Me 792923? 0074016 SST BCW61/BCX71 SOT-23 MECHANICAL DATA mm mils DIM. MIN. TYP. MAX. MIN. TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 Cc 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 oO 0.09 0.17 3.5 6.7 A F 0 Tr _M S z= Fe B 0044616/B 4fS ii SGS-THOMSON BECROGLECTRORICS Mm 7929237? OO78017 456