TLP131 TOSHIBA Photocoupler IRED & Photo-Transistor TLP131 Unit: mm Programmable Controllers AC / DC-Input Module Telecommunication The TOSHIBA mini flat coupler TLP131 is a small outline coupler, suitable for surface mount assembly. TLP131 consists of a photo transistor, optically coupled to an infrared emitting diode. * Collector-emitter voltage: 80 V (min) * Current transfer ratio: 50% (min) * Isolation voltage: 3750 Vrms (min) * UL-recognized: UL 1577, File No.E67349 * cUL-recognized: CSA Component Acceptance Service No.5A Rank GB: 100% (min) File No.E67349 TLP131 base terminal is for the improvement of speed, reduction of dark current, and enable operation. Using by base terminal opening is easy to receive the outside noise. TOSHIBA 11-4C2 Weight: 0.09 g (typ.) Pin Configurations (top view) 1 6 5 3 4 1 : Anode 3 : Cathode 4 : Emitter 5 : Collector 6 : Base Start of commercial production 1988-04 (c) 2019 Toshiba Electronic Devices & Storage Corporation 1 2019-06-10 TLP131 Current Transfer Ratio Current Transfer Ratio (%) (IC/IF) Classification IF = 5 mA, VCE = 5 V, Ta = 25C Marking Of Classification Min Max Blank 50 600 Blank, Y, Y, YE, G, G, GR, B, B, BL, GB Rank Y 50 150 YE Rank GR 100 300 GR Rank BL 200 600 BL Rank GB 100 600 GB Rank YH 75 150 Y Rank GRL 100 200 G Rank GRH 150 300 G Rank BLL 200 400 B Note: Please ask your local retailer about the devices with Rank Y or Rank BL. Note: Application type name for certiffication test,please use standard product type name,i.e. TLP131(GB): TLP131 (c) 2019 Toshiba Electronic Devices & Storage Corporation 2 2019-06-10 TLP131 Absolute Maximum Ratings (Ta = 25C) Characteristics Forward current LED Forward current derating Peak forward current (Ta 53C) (100 s pulse, 100 pps) Reverse voltage Diode power dissipation Symbol Rating Unit IF 50 mA IF/C -0.7 mA/C IFP 1 A VR 5 V PD 100 mW PD/C -1.39 mW/C Tj 125 C Collector-emitter voltage VCEO 80 V Collector-base voltage VCBO 80 V Emitter-collector voltage VECO 7 V Emitter-base voltage VEBO 7 V IC 50 mA ICP 100 mA PC 150 mW PC/C -1.5 mW/C Tj 125 C Storage temperature range Tstg -55 to 125 C Operating temperature range Topr -55 to 100 C Tsol 260 C PT 200 mW PT/C -2.0 mW/C BVS 3750 Vrms Diode power dissipation derating (Ta 53C) Detector Junction temperature Collector current Peak collector current (10 ms pulse, 100 pps) Power dissipation Power dissipation derationg (Ta 25C) Junction temperature Lead soldering temperature (10 s) Total package power dissipation Total package power dissipation derating (Ta 25C) Isolation voltage (AC, 60 s, RH 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: Pins 1 and 3 shorted together, and pins 4, 5 and 6 shorted together. (c) 2019 Toshiba Electronic Devices & Storage Corporation 3 2019-06-10 TLP131 Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VCC 5 48 V Forward current IF 16 25 mA Collector current IC 1 10 mA Topr -25 85 C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Electrical Characteristics (Ta = 25C) Detector LED Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V 10 A Capacitance CT V = 0 V, f = 1 MHz 30 pF Collector-emitter breakdown voltage V(BR)CEO IC = 0.5 mA 80 V Emitter-collector breakdown voltage V(BR)ECO IE = 0.1 mA 7 V Collector-base breakdown voltage V(BR)CBO IC = 0.1 mA 80 V Emitter-base breakdown voltage V(BR)EBO IE = 0.1 mA 7 V VCE = 48 V 10 100 nA VCE = 48 V, Ta = 85 C 2 50 A collector dark current ICEO Collector dark current ICER VCE = 48 V, Ta = 85 C RBE = 1 M 0.5 10 A Collector dark current ICBO VCB = 10 V 0.1 nA DC forward current gain hFE VCE = 5 V, IC = 0.5 mA 400 Capacitance (collector to emitter) CCE V = 0 V, f = 1 MHz 10 pF Min Typ. Max Unit 50 600 100 600 60 30 IF = 5 mA, VCB = 5 V 10 IC = 2.4 mA, IF = 8 mA 0.4 IC = 0.2 mA, IF = 1 mA 0.2 0.4 1 10 Coupled Electrical Characteristics (Ta = 25C) Characteristics Symbol Current transfer ratio Saturated CTR IC/IF IC/IF(sat) Base photo-current Collector-emitter saturation voltage IPB VCE(sat) Test Condition IF = 5 mA, VCE = 5 V Rank GB IF = 1 mA, VCE = 0.4 V Rank GB Rank GB Off-state collector current (c) 2019 Toshiba Electronic Devices & Storage Corporation IC(off) IF = 0.7 mA, VCE = 48 V 4 % % A V A 2019-06-10 TLP131 Isolation Characteristics (Ta = 25C) Characteristics Symbol Test Condition Capacitance (input to output) CS VS = 0 V, f = 1 MHz Isolation resistance RS VS = 500 V, RH 60 % Isolation voltage BVS Min Typ. Max Unit 0.8 pF 10 3750 Vrms Min Typ. Max Unit 2 3 3 3 2 25 40 2 20 30 5x10 10 AC, 60 s 14 Switching Characteristics (Ta = 25C) Characteristics Symbol Rise time tr Fall time tf Test Condition VCC = 10 V, IC = 2 mA RL = 100 Turn-on time ton Turn-off time toff Turn-on time tON Storage time ts Turn-off time tOFF Turn-on time tON Storage time ts Turn-off time tOFF RL = 1.9 k RBE = OPEN VCC = 5 V, IF = 16 mA (Fig.1) RL = 1.9 k RBE = 220 k VCC = 5 V, IF = 16 mA (Fig.1) s s s Fig. 1 Switching time test circuit IF RL RBE IF VCC tS VCE VCE tON (c) 2019 Toshiba Electronic Devices & Storage Corporation 5 VCC 4.5V 0.5V tOFF 2019-06-10 TLP131 IF - Ta PC - Ta 200 Collector power dissipation PC (mW) 100 Forward current IF (mA) 80 60 40 20 0 -20 0 40 20 60 80 100 160 120 80 40 0 -20 120 0 40 20 IF (mA) 500 300 100 50 30 10 10 10 10 -2 Ta = 25C 50 Ta = 25C Forward current Pulse forward current IFP (mA) 100 Pulse width 100s -3 120 I F - VF IFP - DR 1000 100 80 Ambient temperature Ta (C) Ambient temperature Ta (C) 3000 60 10 -1 0 Duty cycle ratio DR 30 10 5 3 1 0.5 0.3 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.6 3.0 VF / Ta - IF IFP - VFP -3.2 -2.8 (mA) -2.4 IFP 1000 -2.0 Pulse forward current Forward voltage temperature coefficient VF / Ta (mV / C) Forward voltage VF (V) -1.6 -1.2 -0.8 -0.4 0.1 0.3 0.5 1 3 Forward current 5 10 IF (mA) 30 50 500 300 100 50 30 10 Pulse width 10s 5 Repetitive 3 Frequency = 100Hz Ta = 25C 1 1.0 1.4 1.8 2.2 Pulse forward voltage VFP NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 6 Toshiba Electronic Devices & Storage Corporation (V) 2019-06-10 TLP131 IC - VCE IC - VCE 30 Ta = 25C IC (mA) 50mA 40 30mA 20mA 15mA 30 Collector current Collector current IC (mA) 50 10mA 0 PC(MAX.) 20 IF = 5mA 10 0 0 2 6 4 8 Ta = 25C IF = 50mA 40mA 30mA 20 20mA 10mA 10 5mA 2mA 0 0 10 0.2 Collector-emitter voltage VCE (V) IC - IF Collector current IC (mA) 50 Ta = 25C 30 10 SAMPLE A 5 3 SAMPLE B 1 VCE = 10V VCE = 5V VCE = 0.4V 0.5 0.3 0.1 0.3 0.5 1 3 5 10 Forward current 30 50 VCE = 10V VCE = 5V VCE = 0.4V 500 300 SAMPLE A 100 SAMPLE B 50 0.3 100 0.5 1 3 3 VCC IF A 1 RBE = 500k 100k 0.1 0.1 0.3 0.5 1 3 5 Forward current 10 IF (mA) 30 50 100 (A) 5 IPB 10 100 30 Base photo current 30 RBE (mA) Collector current IC Ta = 25C 0.3 10 30 50 100 IF (mA) IPB - IF 50 VCE = 5V 50k 5 Forward current IF (mA) 300 0.5 1.0 Ta = 25C IC - IF at RBE 100 0.8 IC / IF - IF 1000 Current transfer ratio IC / IF (%) 100 0.6 0.4 Collector-emitter voltage VCE (V) 10 Ta = 25C VCB IF VCB = 0V VCB = 5V A 3 1 0.3 0.1 0.1 0.3 0.5 1 3 Forward current 5 10 30 50 100 IF (mA) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 7 Toshiba Electronic Devices & Storage Corporation 2019-06-10 TLP131 ICEO - Ta VCE(sat) - Ta 101 0.24 IF = 5mA Ic = 1mA Collector-emitter saturation voltage VCE(sat) (V) 0.20 Collector dark current ICEO (A) 100 VCE = 48V 24V 10V 10-1 5V 10-2 0.16 0.12 0.08 0.04 0 -40 -20 20 0 40 80 60 100 Ambient temperature Ta (C) 10-3 10-4 0 20 60 40 100 80 120 Ambient temperature Ta (C) IC - Ta 100 Switching Time - RL VCE = 5V Ta = 25C IF = 16mA VCC = 5V RBE = 220k 300 IF = 25mA 50 30 10mA 100 (s) Switching time (mA) 5 Collector current 10 IC 5mA 3 1mA 1 50 tOFF 30 ts 10 5 0.5 0.5mA 3 0.3 0.1 tON -20 0 20 40 60 80 1 1 100 3 5 10 Load resistance RL Ambient temperature Ta (C) 30 50 100 (k) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 Toshiba Electronic Devices & Storage Corporation 8 2019-06-10 TLP131 Switching Time - RBE 1000 Ta = 25C IF = 16mA VCC = 5V RL = 1.9k IF = 16mA 300 100 100 (s) 300 tOFF 50 ts 30 Ta = 25C 500 VCC = 5V Switching time (s) 500 Switching time Switching Time - RL 1000 ts 50 30 10 10 5 5 3 tOFF 3 tON 1 100k 300k 1M tON 3M 1 1 Base-emitter resistance RBE () 3 5 10 Load resistance RL 30 50 100 (k) NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. (c) 2019 Toshiba Electronic Devices & Storage Corporation 9 2019-06-10 TLP131 RESTRICTIONS ON PRODUCT USE Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as "TOSHIBA". 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