Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 7
1Publication Order Number:
PZT2222AT1/D
PZT2222A, SPZT2222A
NPN Silicon Planar
Epitaxial Transistor
This NPN Silicon Epitaxial transistor is designed for use in linear
and switching applications. The device is housed in the SOT−223
package which is designed for medium power surface mount
applications.
Features
PNP Complement is PZT2907AT1
The SOT−223 Package Can be Soldered Using Wave or Reflow
SOT−223 Package Ensures Level Mounting, Resulting in Improved
Thermal Conduction, and Allows Visual Inspection of Soldered
Joints
The Formed Leads Absorb Thermal Stress During Soldering,
Eliminating the Possibility of Damage to the Die
Available in 12 mm Tape and Reel
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 40 Vdc
Collector−Base Voltage VCBO 75 Vdc
Emitter−Base Voltage
(Open Collector)
VEBO 6.0 Vdc
Collector Current IC600 mAdc
Total Power Dissipation
up to TA = 25C (Note 1)
PD
1.5
W
Storage Temperature RangeTstg −65 to +150 C
Junction TemperatureTJ150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on an epoxy printed circuit board 1.575 inches x 1.575 inches x
0.059 inches; mounting pad for the collector lead min. 0.93 inches2.
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal Resistance,
Junction−to−Ambient
RqJA 83.3 C/W
Lead Temperature for Soldering,
0.0625 from case
Time in Solder Bath
TL260
10
C
Sec
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
MARKING DIAGRAM
SOT−223 (TO−261)
CASE 318E−04
STYLE 1
Device Package Shipping†
ORDERING INFORMATION
PZT2222AT1G SOT−223
(Pb−Free)
1,000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
A = Assembly Location
Y = Year
M = Month Code
G= Pb−Free Package
BASE
1
COLLECTOR
2, 4
3
EMITTER
SOT−223 PACKAGE
NPN SILICON TRANSISTOR
SURFACE MOUNT
PZT2222AT3G SOT−223
(Pb−Free)
4,000 Tape & Reel
AYM
P1FG
G
(Note: Microdot may be in either location)
SPZT2222AT1G SOT−223
(Pb−Free)
1,000 Tape & Reel
PZT2222A, SPZT2222A
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 −Vdc
Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO 75−Vdc
Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 −Vdc
Base−Emitter Cutoff Current (VCE = 60 Vdc, VBE = −3.0 Vdc) IBEX −20 nAdc
Collector−Emitter Cutoff Current (VCE = 60 Vdc, VBE = −3.0 Vdc) ICEX −10 nAdc
Emitter−Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO −100 nAdc
Collector−Base Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0, TA = 125C)
ICBO
−
−
10
10
nAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc, TA = −55C)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE
35
50
70
35
100
50
40
−
−
−
−
300
−
−
−
Collector−Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VCE(sat)
−
−
0.3
1.0
Vdc
Base−Emitter Saturation Voltages
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
0.6
−
1.2
2.0
Vdc
Input Impedance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hie
2.0
0.25
8.0
1.25
kW
Voltage Feedback Ratio
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hre
−
−
8.0x10−4
4.0x10−4
−
Small−Signal Current Gain
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
ťhfe ť
50
75
300
375
−
Output Admittance
(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
(VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz)
hoe
5.0
25
35
200
mmhos
Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, f = 1.0 kHz) F−4.0 dB
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
300 −
MHz
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cc−8.0 pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ce−25 pF
SWITCHING TIMES (TA = 25C)
Delay Time (VCC = 30 Vdc, IC = 150 mAdc,
IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc)
Figure 1
td−10 ns
Rise Time tr−25
Storage Time (VCC = 30 Vdc, IC = 150 mAdc,
IB(on) = IB(off) = 15 mAdc)
Figure 2
ts−225 ns
Fall Time tf−60
PZT2222A, SPZT2222A
http://onsemi.com
3
Vi
90%
10%
tp
tr
0
VCC
R2
R1
ViD.U.T.
Vo
Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time
Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time
Vi = −0.5 V to +9.9 V, VCC = +30 V, R1 = 619 W, R2 = 200 W.
PULSE GENERATOR: OSCILLOSCOPE:
PULSE DURATION tp3 200 ns INPUT IMPEDANCE Zi> 100 kW
RISE TIME tr3 2 ns INPUT CAPACITANCE Ci< 12 pF
DUTY FACTOR d= 0.02 RISE TIME tr< 5 ns
tf100 ms
-13.8 V
0
+16.2 V
Vi
TIME
VCC
Vo
OSCILLOSCOPE
D.U.T.
Vi
R2
R3
R4
D1
R1
VBB
PZT2222A, SPZT2222A
http://onsemi.com
4
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
A1
b1
D
E
b
e
e1
4
123
0.08 (0003)
A
L1
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: INCH.
1.5
0.059 ǒmm
inchesǓ
SCALE 6:1
3.8
0.15
2.0
0.079
6.3
0.248
2.3
0.091
2.3
0.091
2.0
0.079
SOLDERING FOOTPRINT*
HE
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.50 1.63 1.75 0.060
INCHES
A1 0.02 0.06 0.10 0.001
b0.60 0.75 0.89 0.024
b1 2.90 3.06 3.20 0.115
c0.24 0.29 0.35 0.009
D6.30 6.50 6.70 0.249
E3.30 3.50 3.70 0.130
e2.20 2.30 2.40 0.087
0.85 0.94 1.05 0.033
0.064 0.068
0.002 0.004
0.030 0.035
0.121 0.126
0.012 0.014
0.256 0.263
0.138 0.145
0.091 0.094
0.037 0.041
NOM MAX
L1 1.50 1.75 2.00 0.060
6.70 7.00 7.30 0.264
0.069 0.078
0.276 0.287
HE
− −
e1
010010
q
q
L
L0.20 −−− −−− 0.008 −−− −−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
PZT2222AT1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
