BAR 64 ... W
Mar-21-20001
Silicon PIN Diode
High voltage current controlled
RF resistor for RF attenuator and switches
Frequency range above 1 MHz
Low resistance and short carrier lifetime
For frequencies up to 3 GHz
1
3
VSO05561
2
BAR 64-04W BAR 64-05W BAR 64-06W
EHA07181
3
12
A1 C2
C1/A2
EHA07179
3
12
A1 A2
C1/C2
EHA07187
3
12
C1 C2
A1/A2
Type Marking Pin Configuration Package
BAR 64-04W
BAR 64-05W
BAR 64-06W
PPs
PRs
PSs
1 = A1
1 = A1
1 = C1
2 = C2
2 = C2
2 = C2
3=C1/A2
3 = C1/2
3 = A1/2
SOT-323
SOT-323
SOT-323
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage VR150 V
Forward current IF100 mA
Total power dissipation, TS
115 °C Ptot 250 mW
Junction temperature Tj150 °C
Operating temperature range Top -55 ... 150
Storage temperature Tstg -55 ... 150
Thermal Resistance
Junction - ambient 1) RthJA
300 K/W
Junction - soldering point RthJS
140
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
BAR 64 ... W
Mar-21-20002
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Breakdown voltage
I(BR) = 5 µA
V(BR) 150 - - V
Reverse current
VR = 20 V
IR- - 50 nA
Forward voltage
IF = 50 mA
VF- - 1.1 V
AC characteristics
Diode capacitance
VR = 20 V, f = 1 MHz
CT- 0.23 0.35 pF
Forward resistance
IF = 1 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
IF = 100 mA, f = 100 MHz
rf
-
-
-
12.5
2.1
0.85
20
2.8
1.35
Charge carrier life time
IF = 10 mA, IR = 6 mA, IR = 3 mA
rr - 1.55 - µs
Series inductance Ls- 1.2 - nH
BAR 64 ... W
Mar-21-20003
Forward current IF = f (TA*;TS)
* mounted on alumina
0 20 40 60 80 100 120 °C 150
TA,TS
0
20
40
60
80
100
mA
140
I
F
5
TS
TA
Permissible Pulse Load RthJS = f(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax / IFDC = f(tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1
s
tp
0
10
1
10
2
10
-
I
Fmax
/ I
FDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
BAR 64 ... W
Mar-21-20004
Forward resistance rf = f(IF)
f = 100MHz
10 -2 10 -1 10 0 10 1 10 2 10 3
mA
IF
-1
10
0
10
1
10
2
10
3
10
Ohm
r
f
Diode capacitance CT = f (VR)
f = 1MHz
0 5 10 15 20 V30
VR
0.0
0.1
0.2
0.3
pF
0.5
C
T
Intermodulation intercept point
IP3 = f (IF)
f = parameter
10 -1 10 0 10 1
mA
IF
1
10
2
10
dBm
IP
3
5
f=1800MHz
f=900MHz
Forward current IF = f (VF)
TA = parameter
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V1.0
VF
-2
10
-1
10
0
10
1
10
2
10
3
10
mA
I
F
