Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - (c) NXP N.V. (year). All rights reserved or (c) Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - (c) Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia PDTA124E series PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k Rev. 8 -- 25 November 2011 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package NXP JEITA JEDEC NPN complement PDTA124EE SOT416 SC-75 - PDTC124EE ultra small PDTA124EM SOT883 SC-101 - PDTC124EM leadless ultra small PDTA124ET SOT23 - TO-236AB PDTC124ET small PDTA124EU SOT323 SC-70 - very small PDTC124EU Package configuration 1.2 Features and benefits 100 mA output current capability Built-in bias resistors Simplifies circuit design Reduces component count Reduces pick and place costs AEC-Q101 qualified 1.3 Applications Digital applications in automotive and industrial segments Control of IC inputs Cost-saving alternative for BC847/857 series in digital applications Switching loads 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 50 V IO output current - - 100 mA R1 bias resistor 1 (input) 15.4 22 28.6 k R2/R1 bias resistor ratio 0.8 1 1.2 PDTA124E series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol SOT23; SOT323; SOT416 1 input (base) 2 GND (emitter) 3 3 3 R1 output (collector) 1 R2 1 2 2 006aaa144 sym003 SOT883 1 input (base) 2 GND (emitter) 3 1 3 3 2 output (collector) R1 1 Transparent top view R2 2 sym003 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PDTA124EE SC-75 plastic surface-mounted package; 3 leads SOT416 PDTA124EM SC-101 leadless ultra small plastic package; 3 solder lands; SOT883 body 1.0 0.6 0.5 mm PDTA124ET - plastic surface-mounted package; 3 leads SOT23 PDTA124EU SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 5. Type number Marking code[1] PDTA124EE 05 PDTA124EM DH PDTA124ET *05 PDTA124EU *05 [1] PDTA124E_SER Product data sheet Marking codes * = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. Rev. 8 -- 25 November 2011 (c) NXP B.V. 2011. All rights reserved. 2 of 17 PDTA124E series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 50 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 10 V VI input voltage - +10 V positive PDTA124E_SER Product data sheet negative - 40 V IO output current - 100 mA ICM peak collector current single pulse; tp 1 ms - 100 mA Ptot total power dissipation Tamb 25 C PDTA124EE (SOT416) [1][2] - 150 mW PDTA124EM (SOT883) [2][3] - 250 mW PDTA124ET (SOT23) [1] - 250 mW PDTA124EU (SOT323) [1] - 200 mW Tj junction temperature - 150 C Tamb ambient temperature 65 +150 C Tstg storage temperature 65 +150 C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint. All information provided in this document is subject to legal disclaimers. Rev. 8 -- 25 November 2011 (c) NXP B.V. 2011. All rights reserved. 3 of 17 PDTA124E series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 006aac778 300 Ptot (mW) (1) (2) 200 (3) 100 0 -75 -25 25 75 125 175 Tamb (C) (1) SOT23; FR4 PCB, standard footprint SOT883; FR4 PCB with 70 m copper strip line, standard footprint (2) SOT323; FR4 PCB, standard footprint (3) SOT416; FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 7. PDTA124E_SER Product data sheet Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Min Typ Max Unit PDTA124EE (SOT416) [1][2] - - 830 K/W PDTA124EM (SOT883) [2][3] - - 500 K/W PDTA124ET (SOT23) [1] - - 500 K/W PDTA124EU (SOT323) [1] - - 625 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint. All information provided in this document is subject to legal disclaimers. Rev. 8 -- 25 November 2011 (c) NXP B.V. 2011. All rights reserved. 4 of 17 PDTA124E series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 006aac781 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 0.2 102 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for PDTA124EE (SOT416); typical values 006aac782 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, 70 m copper strip line Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for PDTA124EM (SOT883); typical values PDTA124E_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 -- 25 November 2011 (c) NXP B.V. 2011. All rights reserved. 5 of 17 PDTA124E series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 006aac779 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for PDTA124ET (SOT23); typical values 006aac780 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.1 0.05 0.02 10 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for PDTA124EU (SOT323); typical values PDTA124E_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 -- 25 November 2011 (c) NXP B.V. 2011. All rights reserved. 6 of 17 PDTA124E series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 7. Characteristics Table 8. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 100 nA VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 180 A hFE DC current gain VCE = 5 V; IC = 5 mA 60 - - VCEsat collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV VI(off) off-state input voltage VCE = 5 V; IC = 100 A - 1.1 0.8 V VI(on) on-state input voltage VCE = 0.3 V; IC = 5 mA 2.5 1.7 - V R1 bias resistor 1 (input) 15.4 22 28.6 k R2/R1 bias resistor ratio Cc collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz [1] Characteristics of built-in transistor 006aac800 103 [1] 0.8 1 1.2 - - 3 pF - 180 - MHz 006aac801 -1 hFE (1) VCEsat (V) (2) (3) 102 -10-1 (1) (2) 10 (3) 1 -10-1 -1 -102 -10 -10-2 -10-1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 40 C (3) Tamb = 40 C DC current gain as a function of collector current; typical values PDTA124E_SER Product data sheet -102 -10 IC (mA) (1) Tamb = 100 C Fig 6. -1 Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. Rev. 8 -- 25 November 2011 (c) NXP B.V. 2011. All rights reserved. 7 of 17 PDTA124E series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 006aac802 -10 (1) VI(on) (V) 006aac803 -10 VI(off) (V) (2) (3) (1) (2) -1 -1 -10-1 -10-1 -1 -102 -10 (3) -10-1 -10-1 -1 IC (mA) VCE = 0.3 V VCE = 5 V (1) Tamb = 40 C (1) Tamb = 40 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C (3) Tamb = 100 C Fig 8. -10 IC (mA) On-state input voltage as a function of collector current; typical values 006aac804 6 Cc (pF) Fig 9. Off-state input voltage as a function of collector current; typical values 006aac763 103 fT (MHz) 4 102 2 0 0 -10 -20 -30 -40 -50 VCB (V) f = 1 MHz; Tamb = 25 C Product data sheet -1 -102 -10 IC (mA) VCE = 5 V; Tamb = 25 C Fig 10. Collector capacitance as a function of collector-base voltage; typical values PDTA124E_SER 10 -10-1 Fig 11. Transition frequency as a function of collector current; typical values of built-in transistor All information provided in this document is subject to legal disclaimers. Rev. 8 -- 25 November 2011 (c) NXP B.V. 2011. All rights reserved. 8 of 17 PDTA124E series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 0.62 0.55 0.55 0.47 0.95 0.60 1.8 1.4 3 0.45 0.15 0.50 0.46 3 0.30 0.22 1.75 0.9 1.45 0.7 1.02 0.95 0.65 1 0.30 0.22 2 0.30 0.15 0.25 0.10 1 2 1 0.20 0.12 0.35 Dimensions in mm 04-11-04 Fig 12. Package outline PDTA124EE (SOT416/SC-75) 3.0 2.8 Dimensions in mm 03-04-03 Fig 13. Package outline PDTA124EM (SOT883/SC-101) 1.1 0.9 2.2 1.8 1.1 0.8 0.45 0.15 3 3 0.45 0.15 2.5 1.4 2.1 1.2 2.2 1.35 2.0 1.15 1 1 2 1.9 0.48 0.38 04-11-04 Fig 14. Package outline PDTA124ET (SOT23) PDTA124E_SER Product data sheet 0.4 0.3 0.15 0.09 Dimensions in mm 2 0.25 0.10 1.3 Dimensions in mm 04-11-04 Fig 15. Package outline PDTA124EU (SOT323/SC-70) All information provided in this document is subject to legal disclaimers. Rev. 8 -- 25 November 2011 (c) NXP B.V. 2011. All rights reserved. 9 of 17 PDTA124E series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package Description Packing quantity 3000 5000 10000 PDTA124EE SOT416 4 mm pitch, 8 mm tape and reel -115 - -135 PDTA124EM SOT883 2 mm pitch, 8 mm tape and reel - - -315 PDTA124ET SOT23 4 mm pitch, 8 mm tape and reel -215 - -235 PDTA124EU SOT323 4 mm pitch, 8 mm tape and reel -115 - -135 [1] For further information and the availability of packing methods, see Section 14. 11. Soldering 2.2 1.7 solder lands solder resist 1 0.85 2 solder paste 0.5 (3x) occupied area Dimensions in mm 0.6 (3x) 1.3 sot416_fr Reflow soldering is the only recommended soldering method. Fig 16. Reflow soldering footprint PDTA124EE (SOT416/SC-75) PDTA124E_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 -- 25 November 2011 (c) NXP B.V. 2011. All rights reserved. 10 of 17 PDTA124E series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 1.3 0.7 R0.05 (12x) solder lands solder resist 0.9 0.6 0.7 solder paste 0.25 (2x) occupied area 0.3 (2x) 0.3 0.4 (2x) 0.4 Dimensions in mm sot883_fr Reflow soldering is the only recommended soldering method. Fig 17. Reflow soldering footprint PDTA124EM (SOT883/SC-101) PDTA124E_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 -- 25 November 2011 (c) NXP B.V. 2011. All rights reserved. 11 of 17 PDTA124E series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3x) 0.7 (3x) Dimensions in mm 0.5 (3x) 0.6 (3x) 1 sot023_fr Fig 18. Reflow soldering footprint PDTA124ET (SOT23) 2.2 1.2 (2x) 1.4 (2x) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 19. Wave soldering footprint PDTA124ET (SOT23) PDTA124E_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 -- 25 November 2011 (c) NXP B.V. 2011. All rights reserved. 12 of 17 PDTA124E series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3x) 3 solder paste 1.3 1 occupied area 0.5 (3x) Dimensions in mm 0.55 (3x) sot323_fr Fig 20. Reflow soldering footprint PDTA124EU (SOT323/SC-70) 4.6 2.575 1.425 (3x) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2x) Dimensions in mm preferred transport direction during soldering sot323_fw Fig 21. Wave soldering footprint PDTA124EU (SOT323/SC-70) PDTA124E_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 -- 25 November 2011 (c) NXP B.V. 2011. All rights reserved. 13 of 17 PDTA124E series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PDTA124E_SER v.8 20111125 Product data sheet - PDTA124E_SERIES v.7 Modifications: * The format of this document has been redesigned to comply with the new identity guidelines of NXP Semiconductors. * * * * * * * * Legal texts have been adapted to the new company name where appropriate. * * * * * Type numbers PDTA124EEF, PDTA124EK and PDTA124ES removed. Section 1 "Product profile": updated Section 3 "Ordering information": added Section 4 "Marking": updated Figure 1 to 11: added Section 6 "Thermal characteristics": updated Table 8 "Characteristics": Vi(on) redefined to VI(on) on-state input voltage, Vi(off) redefined to VI(off) off-state input voltage, ICEO updated, fT added Section 8 "Test information": added Section 9 "Package outline": superseded by minimized package outline drawings Section 10 "Packing information": added Section 11 "Soldering": added Section 13 "Legal information": updated PDTA124E_SERIES v.7 20040805 Product data sheet - PDTA124E_SERIES v.6 PDTA124E_SERIES v.6 20030414 Product specification - - PDTA124E_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 -- 25 November 2011 (c) NXP B.V. 2011. All rights reserved. 14 of 17 PDTA124E series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft -- The document is a draft version only. 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NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). 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Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. 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Export might require a prior authorization from competent authorities. PDTA124E_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 -- 25 November 2011 (c) NXP B.V. 2011. All rights reserved. 15 of 17 PDTA124E series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PDTA124E_SER Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 8 -- 25 November 2011 (c) NXP B.V. 2011. All rights reserved. 16 of 17 PDTA124E series NXP Semiconductors PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Quality information . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packing information . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Contact information. . . . . . . . . . . . . . . . . . . . . 16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 25 November 2011 Document identifier: PDTA124E_SER