PDTA124EU,115 - NEXPERIA

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1. Product profile

1.1 General description

PNP Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic

packages.

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

PDTA124E series

PNP resistor-equipped transistors;

R1 = 22 k, R2 = 22 k

Rev. 8 — 25 November 2011 Product data sheet

Table 1. Product overview

Type number Package NPN

complement Package

configuration

NXP JEITA JEDEC

PDTA124EE SOT416 SC-75 - PDTC124EE ultra small

PDTA124EM SOT883 SC-101 - PDTC124EM leadless ultra small

PDTA124ET SOT23 - TO-236AB PDTC124ET small

PDTA124EU SOT323 SC-70 - PDTC124EU very small

100 mA output current capability Reduces component count

Built-in bias resistors Reduces pick and place costs

Simplifies circuit design AEC-Q101 qualified

Digital applications in automotive and

industrial segments

Cost-saving alternative for BC847/857

series in digital applications

Control of IC inputs Switching loads

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 50 V

IOoutput current - - 100 mA

R1 bias resistor 1 (input) 15.4 22 28.6 k

R2/R1 bias resistor ratio 0.8 1 1.2

Product data sheet Rev. 8 — 25 November 2011 2 of 17

NXP Semiconductors PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

2. Pinning information

3. Ordering information

4. Marking

[1] * = placeholder for manufacturing site code

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

SOT23; SOT323; SOT416

1 input (base)

2 GND (emitter)

3 output (collector)

SOT883

1 input (base)

2 GND (emitter)

3 output (collector)

006aaa144

sym003

1R1

Transparent

top view

sym003

1R1

Table 4. Orderin g information

Type number Package

Name Description Version

PDTA124EE SC-75 plastic surface-mounted package; 3 leads SOT416

PDT A124EM SC-101 leadless ultra small plastic package; 3 solder lands;

body 1.0 0.6 0.5 mm SOT883

PDTA124ET - plastic surface-mounted package; 3 le ads SOT23

PDTA124EU SC-70 plastic surface-mounted package; 3 leads SOT323

Table 5. Marking codes

Type number Marking code[1]

PDTA124EE 05

PDTA124EM DH

PDTA124ET *05

PDTA124EU *05

Product data sheet Rev. 8 — 25 November 2011 3 of 17

NXP Semiconductors PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reflow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 50 V

VEBO emitter-base voltage open collector - 10 V

VIinput voltage

positive - +10 V

negative - 40 V

IOoutput current - 100 mA

ICM peak collector current single pulse;

tp1ms -100 mA

Ptot total power dissipation Tamb 25 C

PDTA124EE (SOT416) [1][2] -150mW

PDTA124EM (SOT883) [2][3] -250mW

PDTA124ET (SOT23) [1] -250mW

PDTA124EU (SOT323) [1] -200mW

Tjjunction temperature - 150 C

Tamb ambient temperature 65 +150 C

Tstg storage temperature 65 +150 C

Product data sheet Rev. 8 — 25 November 2011 4 of 17

NXP Semiconductors PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

[3] Device mounted on an FR4 PCB with 70 m copper strip line, standard footprint.

(1) SOT23; FR4 PCB, standard footprint

SOT883; FR4 PCB with 70 m copper strip line, standard footprint

(2) SOT323; FR4 PCB, standard footprint

(3) SOT416; FR4 PCB, standard footprint

Fig 1. Power derating curves

Tamb (°C)

-75 17512525 75-25

006aac778

100

200

300

Ptot

(mW)

(1)

(2)

(3)

Table 7. Thermal characteris tics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from junction

to ambient in free air

PDTA124EE (SOT416) [1][2] --830K/W

PDTA124EM (SOT883) [2][3] --500K/W

PDTA124ET (SOT23) [1] --500K/W

PDTA124EU (SOT323) [1] --625K/W

Product data sheet Rev. 8 — 25 November 2011 5 of 17

NXP Semiconductors PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration for

PDTA124EE (SOT416); typical values

FR4 PCB, 70 m copper strip line

Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for

PDTA124EM (SOT883); typic al values

006aac781

10-5 1010-2

10-4 102

10-1 tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33 0.2

0.1

0.05

0.02 0.01

006aac782

10-5 1010-2

10-4 102

10-1 tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33 0.2

0.1 0.05

0.02

0.01

Product data sheet Rev. 8 — 25 November 2011 6 of 17

NXP Semiconductors PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

FR4 PCB, standard footprint

Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration for

PDTA124ET (SOT23); typical values

FR4 PCB, standard footprint

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for

PDTA124EU (SOT323); typical values

006aac779

10-5 1010-2

10-4 102

10-1 tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33 0.2

0.1

0.05

0.02 0.01

006aac780

10-5 1010-2

10-4 102

10-1 tp (s)

10-3 103

102

103

Zth(j-a)

(K/W)

duty cycle = 1

0.75 0.5

0.33 0.2

0.1

0.05

0.02 0.01

Product data sheet Rev. 8 — 25 November 2011 7 of 17

NXP Semiconductors PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

7. Characteristics

[1] Characteristics of built-in transistor

Table 8. Characteristics

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off

current VCB =50 V; IE=0A - - 100 nA

ICEO collector-emitter

cut-off current VCE =30 V; I B=0A - - 100 nA

VCE =30 V; IB=0A;

Tj= 150 C--5A

IEBO emitter-base cut-off

current VEB =5V; I

C=0A - - 180 A

hFE DC current gain VCE =5V; I

C=5mA 60 - -

VCEsat collector-emitter

saturation voltage IC=10 mA; IB=0.5 mA - - 150 mV

VI(off) off-state input voltage VCE =5V; I

C=100 A- 1.1 0.8 V

VI(on) on-state input voltage V CE =0.3 V; IC=5mA 2.5 1.7 - V

R1 bias resistor 1 (input) 15.4 22 28.6 k

R2/R1 bias resistor ratio 0.8 1 1.2

Cccollector capacitance VCB =10 V; IE=i

e=0A;

f=1MHz --3pF

fTtransition frequency VCE =5V; I

C=10 mA;

f = 100 MHz [1] -180-MHz

VCE =5V

(1) Tamb = 100 C

(2) Tamb =25C

(3) Tamb =40 C

IC/IB=20

(1) Tamb = 100 C

(2) Tamb =25C

(3) Tamb =40 C

Fig 6. DC current gain as a function of collector

current; typical values Fig 7. Collec tor-emitter sa turation voltage as a

function of collector current; typical values

IC (mA)

-10-1 -102

-10-1

006aac800

102

103

hFE

(1) (2) (3)

006aac801

IC (mA)

-10-1 -102

-10-1

-1

VCEsat

(V)

-10-2

(1)

(2)

(3)

Product data sheet Rev. 8 — 25 November 2011 8 of 17

NXP Semiconductors PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

VCE =0.3 V

(1) Tamb =40 C

(2) Tamb =25C

(3) Tamb = 100 C

VCE =5V

(1) Tamb =40 C

(2) Tamb =25C

(3) Tamb = 100 C

Fig 8. On-state input voltage as a function of

collector current; typical valu es Fig 9. Off-state input voltage as a function of

collector current; typical values

f=1MHz; T

amb =25CV

CE =5V; T

amb =25C

Fig 10. Collector capacitance as a function of

collector-base voltage; typical values Fig 11. Transition frequency as a function of colle cto r

current; typical values of built-in transistor

006aac802

IC (mA)

-10-1 -102

-10-1

-1

-10

VI(on)

(V)

-10-1

(1)

(2)

(3)

IC (mA)

-10-1 -10-1

006aac803

-1

-10

VI(off)

(V)

-10-1

(1)

(2)

(3)

VCB (V)

0 -50-40-20 -30-10

006aac804

(pF)

006aac763

IC (mA)

-10-1 -102

-10-1

102

103

(MHz)

Product data sheet Rev. 8 — 25 November 2011 9 of 17

NXP Semiconductors PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

9. Package outline

Fig 12. Package outline PDTA124EE ( SOT416/SC-75) Fig 13. Package outline PDTA124EM (SOT883/SC-101)

Fig 14. Package outline PDTA124ET (SOT23) Fig 15. Package outline PDTA124EU (SOT323/SC-70)

04-11-04Dimensions in mm

0.95

0.60

1.8

1.4

1.75

1.45 0.9

0.7

0.25

0.10

0.30

0.15

30.45

0.15

03-04-03Dimensions in mm

0.62

0.55

0.47 0.50

0.46

0.65

0.20

0.12

0.30

0.22

0.30

0.22

1.02

0.95

0.35

04-11-04Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1 1.4

1.2

0.48

0.38 0.15

0.09

04-11-04Dimensions in mm

0.45

0.15

1.1

0.8

2.2

1.8

2.2

2.0 1.35

1.15

1.3

0.4

0.3 0.25

0.10

Product data sheet Rev. 8 — 25 November 2011 10 of 17

NXP Semiconductors PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

11. Soldering

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

3000 5000 10000

PDTA124EE SOT416 4 mm pitch, 8 mm tape and reel -115 - -135

PDTA124EM SOT883 2 mm pitch, 8 mm tape and reel - - -315

PDTA124ET SOT23 4 mm pitch, 8 mm tape and reel -215 - -235

PDTA124EU SOT323 4 mm pitch, 8 mm tape and reel -115 - -135

Reflow soldering is the only recommended soldering method.

Fig 16. Reflow soldering footprint PDTA124EE (SOT416/SC-75)

solder lands

solder resist

occupied area

solder paste

sot416_fr

0.85

1.7

2.2

0.5

(3×)

0.6

(3×)

1.3

Dimensions in mm

Product data sheet Rev. 8 — 25 November 2011 11 of 17

NXP Semiconductors PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Reflow soldering is the only recommended soldering method.

Fig 17. Reflow soldering footprint PDTA124EM (SOT883/SC-101)

solder lands

solder resist

occupied area

solder paste

sot883_fr

1.3

0.3

0.6 0.7

0.4

0.9

0.3

(2×)

0.4

(2×)

0.25

(2×)

R0.05 (12×)

0.7

Dimensions in mm

Product data sheet Rev. 8 — 25 November 2011 12 of 17

NXP Semiconductors PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Fig 18. Reflow soldering footprint PDTA124ET (SOT23)

Fig 19. Wave soldering footprint PDTA124ET (SOT23)

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Product data sheet Rev. 8 — 25 November 2011 13 of 17

NXP Semiconductors PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Fig 20. Reflow soldering footprint PDTA124EU (SOT323/SC-70)

Fig 21. Wave soldering footprint PDTA124EU (SOT323/SC-70)

solder lands

solder resist

occupied area

solder paste

sot323_fr

2.65

2.35 0.6

(3×)

0.5

(3×)

0.55

(3×)

1.325

1.85

1.3

Dimensions in mm

sot323_fw

3.65 2.1

1.425

(3×)

4.6

(2×)

2.575

1.8

solder lands

solder resist

occupied area

preferred transport

direction during soldering

Dimensions in mm

Product data sheet Rev. 8 — 25 November 2011 14 of 17

NXP Semiconductors PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PDTA124E_SER v.8 20111125 Product data sheet - PDTA124E_SERIES v.7

Modifications: •The format of this document has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Type numbers PDTA124EEF, PDTA124EK and PDTA124ES removed.

•Section 1 “Product profile”: updated

•Section 3 “Ordering information”: added

•Section 4 “Marking”: updated

•Figure 1 to 11: added

•Section 6 “Thermal characteristics”: updated

•Table 8 “Characteristics”: Vi(on) redefined to VI(on) on-state input voltage, Vi(off) redefined to

VI(off) off-state input voltage, ICEO updated, fT added

•Section 8 “Test information”: added

•Section 9 “Package outline”: superseded by minimized package outline drawings

•Section 10 “Packing information”: added

•Section 11 “Soldering”: added

•Section 13 “Legal information”: updated

PDTA124E_SERIES v.7 20040805 Product data sheet - PDTA124E_SERIES v.6

PDTA124E_SERIES v.6 20030414 Product specification - -

Product data sheet Rev. 8 — 25 November 2011 15 of 17

NXP Semiconductors PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

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full information. For detailed and full information see the relevant full data

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 8 — 25 November 2011 16 of 17

NXP Semiconductors PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PDTA124E series

PNP resistor-equipped transistors; R1 = 22 k, R2 = 22 k

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 25 November 2011

Documen t identifier: PDTA124E_SER

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 7

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Packing information . . . . . . . . . . . . . . . . . . . . 10

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16

14 Contact information. . . . . . . . . . . . . . . . . . . . . 16

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17