BA157GP thru BA159GP Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Fast Switching Rectifier DO-204AL (DO-41) Reverse Voltage 400 to 1000 V Forward Current 1.0 A Features * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * High temperature metallurgically bonded construction * For use in high frequency rectifier circuits * Fast switching for high efficiency * Cavity-free glass passivated junction * Capable of meeting environmental standards of MIL-S-19500 * 1.0 Ampere operation at TA=55C with no thermal runaway * Typical IR less than 0.1A * High temperature soldering guaranteed: 350C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension * d e t n e t a P 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. 0.205 (5.2) 0.160 (4.1) (R) 1.0 (25.4) MIN. Mechanical Data 0.034 (0.86) 0.028 (0.71) DIA. NOTE: Lead diameter is 0.026 (0.66) 0.023 (0.58) Case: JEDEC DO-204AL, molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 ounce, 0.3 gram for suffix "E" part numbers Dimensions in inches and (millimeters) *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306 Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Symbols BA157GP BA158GP BA159DGP BA159GP Units Maximum repetitive peak reverse voltage VRRM 400 600 800 1000 V Maximum RMS voltage VRMS 280 420 560 700 V Maximum DC blocking voltage VDC 400 600 800 1000 V Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=55C IF(AV) 1.0 A Peak forward surge current 10ms single half sine-wave superimposed on rated load at TA=25C IFSM 20 A RJA 55 C/W TJ, TSTG - 65 to +175 C Typical thermal resistance (NOTE 1) Operating junction and storage temperature range Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Symbols BA157GP BA158GP BA159DGP BA159GP Units Maximum instantaneous forward voltage at 1.0A VF 1.3 V Maximum DC reverse current at rated DC blocking voltage TA=25C IR 5.0 A Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A trr Typical junction capacitance at 4.0V, 1MHz CJ 150 250 500 15 500 ns pF Notes: (1) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, P.C.B. mounted Document Number 88537 06-Mar-02 www.vishay.com 1 BA157GP thru BA159GP Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current 20 1.0 Resistive or Inductive Load 0.8 0.6 0.4 0.2 0.375" (9.5mm) Lead Length Peak Forward Surge Current (A) Average Forward Rectified Current (A) Fig. 1 - Forward Current Derating Curve 75 50 25 100 150 125 5 1 100 Number of Cycles at 50 HZ Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics 20 Instantaneous Reverse Current (A) 1 TJ = 25C Pulse Width = 300s 1% Duty Cycle 0.1 0.01 10 Ambient Temperature (C) 10 TJ = 125C 1 TJ = 75C 0.1 TJ = 25C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 40 60 80 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Transient Thermal Impedance 100 100 100 TJ = 25C f = 1.0MHZ Vsig = 50mVp-p 10 1 10 Reverse Voltage (V) www.vishay.com 2 100 Transient Thermal Impedance (CW) Instantaneous Forward Current (A) 10 175 10 Junction Capacitance (pF) 15 0 0 1 TA = 25C 10ms Single Half Sine-Wave At Rated Load 10 1 0.1 0.01 0.1 1 10 100 t, Pulse Duration (sec.) Document Number 88537 06-Mar-02