NOTES :1.Measured at 1.0 MHz and applied reverse volt age of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
3.Reverse Recovery Test Conditions:I
F
=0.5A,I
R
=1A,I
RR
=0.25A.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
I
R
@T
A
=
55 C
@T
A
=100 C
PR1001G thru PR1007G
FEATURES
Fast switching for high efficiency
Glass passivated chip
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic ma terial has UL flamm ability classification
94V-0
ME CHANICAL DAT A
Case : JEDEC DO-41 m olded plastic
Polarity : Color band denotes cathode
Weight : 0.012 ounces, 0.34 grams
Mounting position : Any
MAXIMUM RATI NGS AND ELECTRICAL CHA RACTERISTICS
Ratings at 25
℃
am bient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
F o r capacitive lo ad, dera te c u rr e n t by 20%
PR
1003G
200
140
200
PR
1001G
50
35
50
PR
1007G
1000
700
1000
PR
1002G
100
70
100
PR
1006G
800
560
800
PR
1005G
600
420
600
PR
1004G
400
280
400
Maxim um Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load
Maximum Recurren t Peak R everse Voltage
Maximu m R MS Vo lta ge
Maxim um DC Blocking Voltage
Maximu m f orward Vo ltage a t 1.0A DC
Maximum DC Reve rse Current
at Rated DC Blocking Voltage
@T
A
=25 C
1.0
30
1.3
5
50
T
J
Operating Temperature Range
-55 to +150 C
T
STG
Storage Temperature Range
-55 to +150 C
Typic al Thermal Resistance (Note 2)
R
0JA
50
C/W
C
J
Typical Junction
Capacitance (Note 1)
15
pF
uA
uA
V
A
A
V
UNIT
V
V
All Dimensions in millimete r
Max.
Mi n.
DO-41
Dim.
A
D
C
B 25.4 5.2 0
-
4.10
0.71
2.00 2.70
0.8 6
DO-41
A
C
D
A
B
CHARACTERISTICS SYMBOL
Maximum Reverse Recovery Time (Note 3)
T
RR
250 ns150 500
FA ST RECOVERY
GLAS S PA SSIVATED RECTIFIERS
REVERSE VOLT AGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.0
Ampere
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KDEC02
RATING AND CHARACT ERISTIC CU RV ES
PR1001G thru PR1007G
FIG.2 - MAXIM UM NON-REPETITIVE SURGE CURRENT
NUMB ER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT,
AMPERES
1 5 10 50 100220
0
10
20
30
40
Pulse width 8.3ms
Single Half-Sine-Wave
(J EDEC METHOD)
10
AMBIENT TEMPERATURE , C
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FOR WARD CURRENT
AMPERES
0.6
0
0.2
1.0
25
75 100 125 15050 175
SINGLE PHASE HALF W AVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
0.8
0.4
25
75 100 125 15050 175
IN STANTANEOUS F ORWARD VOLTAGE , VO LTS
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
0.2 0.4 1.2 1.4
0.1
1.0
0.6 0.8 1.0
0.01 1.8
1.6
TJ= 25 C
PULSE WIDTH 300us
2.0
FIG.3 - TYPICAL JUNCTION CAPACITANCE
CA PACITA N CE , (pF)
REVERSE VOLTAG E , VOLTS
10
1100
100
10
1.0
INSTANTANEOUS FOR WARD CURRENT ,(A)
4
T
J
= 25 C, f= 1MHz
REV. 2, 01-Dec-2000, KDEC02
