2N2918
DUAL SILICON
NPN TRANSISTOR DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N2918 is a Dual
Silicon NPN Transistor utilizing two individual chips
mounted in a hermetically sealed metal case designed
for differential amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 45 V
Collector-Emitter Voltage VCEO 45 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 30 mA
Power Dissipation (One Die) PD 300 mW
Power Dissipation (Both Dice) PD 500 mW
Power Dissipation (One Die, TC=25°C) PD 750 mW
Power Dissipation (Both Dice, TC=25°C) PD 1.5 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=45V 10 nA
ICEO V
CE=5.0V 2.0 nA
IEBO V
EB=5.0V 2.0 nA
BVCBO I
C=10μA 45 V
BVCEO I
C=10mA 45 V
BVEBO I
E=10μA 6.0 V
VCE(SAT) I
C=1.0mA, IB=0.1mA 0.35 V
VBE(ON) V
CE=5.0V, IC=100μA 0.70 V
hFE V
CE=5.0V, IC=10μA 150 600
hFE V
CE=5.0V, IC=10μA, TA=–55°C 30
hFE V
CE=5.0V, IC=100μA 225
hFE V
CE=5.0V, IC=1.0mA 300
fT V
CE=5.0V, IC=500μA, f=20MHz 60 MHz
Cob V
CB=5.0V, IE=0, f=140kHz 6.0 pF
NF VCE=5.0V, IC=10μA, RS=10kΩ,
f=1.0kHz, BW=200Hz 3.0 dB
hFE1/hFE2 V
CE=5.0V, IC=100μA 0.8 1.0
|VBE1-VBE2| V
CE=5.0V, IC=10μA 10 mV
|VBE1-VBE2| V
CE=5.0V, IC=100μA 5.0 mV
|VBE1-VBE2| V
CE=5.0V, IC=1.0mA 10 mV
Δ(VBE1-VBE2) VCE=5.0V, IC=100μA, TA=–55°C to +25°C 1.6 mV
Δ(VBE1-VBE2) VCE=5.0V, IC=100μA, TA=+25°C to +125°C 2.0 mV
TO-78 CASE
R1 (4-March 2011)
www.centralsemi.com
2N2918
DUAL SILICON
NPN TRANSISTOR
TO-78 CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
www.centralsemi.com
R1 (4-March 2011)
