DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
© 1988, 1999
Document No. P11310EJ5V0DS00 (5th edition)
Date Published February 1999 NS CP(K)
Printed in Japan
PHOTOCOUPLER
PS2706-1,PS2706-2,PS2706-4
AC INPUT RESPONSE
DARLINGTON TRANSISTOR
SOP MULTI PHOTOCOUPLER SERIES
The mark •
••
• shows major revised poi nts.
−NEPOCTM Series−
DESCRIPTION
The PS2706-1, PS2706-2, PS2706-4, are optically coupled isolators containing GaAs light emitting diodes and an
NPN silicon darlington-connected phototransistor.
Each is mounted in a plastic SOP (Small Out-line Package) for high density applications.
This package has shield effect to cut off ambient light.
FEATURES
• AC input response
• High current transfer ratio (CTR = 2 000 % TYP.)
• High isolation voltage (BV = 3 750 Vr.m.s.)
• Small and thin (SOP) package
• High-speed switching (tr, tf = 200
µ
s TYP.)
• Ordering number of taping product (1-ch only): PS2706-1-E3, E4, F3, F4
• UL approved: File No. E72422 (S)
• VDE0884 approved (Option)
APPLICATIONS
•Hybrid IC
• Telephone, Exchange equipment
• FA/OA equipment
• Programmable logic controllers
ORDERING INFORMATION
Part Number Package Safety Standard A pproval
PS2706-1 4-pin SOP Standard specifi c ation product s
PS2706-2 8-pin SOP • UL approved
PS2706-4 16-pin SOP
PS2706-1-V 4-pin SOP VDE0884 specification products (Option)
PS2706-2-V 8-pin SOP
PS2706-4-V 16-pin SOP
Data Sheet P11310EJ5V0DS00
2
PS2706-1,PS2706-2,PS2706-4
PACKAGE DIMENSIONS (in millimeters)
PS2706-1
4.5 MAX.
7.0±0.3
4.4 1.3
0.5±0.3
0.15
+0.10
–0.05
2.0
0.1±0.1
2.3 MAX.
2.54 1.2 MAX.
0.4
+0.10
–0.05
0.25 M
PS2706-2
9.3 MAX.
2.0
0.1±0.1
2.3 MAX.
2.54 1.2 MAX.
0.4
+0.10
–0.05
0.25 M
7.0±0.3
4.4 1.3
0.5±0.3
0.15
+0.10
–0.05
TOP VIEW
1234
8765 1. 3. Anode,Cathode
2. 4. Cathode,Anode
5. 7. Emitter
6. 8. Collector
PS2706-4
19.46 MAX.
2.0
0.1±0.1
2.3 MAX.
2.54 1.2 MAX.
0.4
+0.10
–0.05
0.25 M
7.0±0.3
4.4 1.3
0.5±0.3
0.15
+0.10
–0.05
TOP VIEW
1. 3. 5. 7. Anode,Cathode
2. 4. 6. 8. Cathode,Anode
9. 11. 13. 15. Emitter
10. 12. 14. 16. Collector
16 15 14 13 12 11 10 9
12345678
TOP VIEW
1. Anode,Cathode
2. Cathode,Anode
3. Emitter
4. Collector
43
12
Data Sheet P11310EJ5V0DS00 3
PS2706-1,PS2706-2,PS2706-4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °
°°
°C, unless otherwise specified)
Ratings
Parameter Symbol PS2706-1 PS2706-2,
PS2706-4
Unit
Diode Forward Current (DC) IF±50 mA
Power Dissipati on Derating
∆
PD/°C0.8mW/
°
C
Power Dissipati on PD80 mW/ch
Peak Forward Current*1 IFP ±1A
Transistor Collector to Emitter Voltage VCEO 40 V
Emitter to Collector Voltage VECO 6V
Collector Current IC200 160 mA/ch
Power Dissipati on Derating
∆
PC/°C 1.5 1.2 mW/°C
Power Dissipati on PC150 120 mW/ch
Isolat i on Voltage*2 B V 3 750 Vr.m. s .
Operating Am bi ent Tem perature TA–55 to +100 °C
Storage Temperat ure Tstg –55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
Data Sheet P11310EJ5V0DS00
4
PS2706-1,PS2706-2,PS2706-4
ELECTRICAL CHARACTERISTICS (TA = 25 °
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VFIF = ±5 mA 1.1 1.4 V
Terminal Capaci tance CtV = 0 V, f = 1 MHz 60 pF
Transistor Collecto r to Emitte r
Current ICEO IF = 0 mA, VCE = 40 V 400 nA
Coupled Current Transf er Ratio
(IC/IF)CTR IF = ±1 m A , VCE = 2 V 200 2 000 %
CTR Ratio*1 CTR1/
CTR2 IF = ±1 mA, V CE = 2 V 0.3 1.0 3.0
Collecto r Sa tu r a tio n
Voltage VCE (sat) IF = ±1 mA, I C = 2 m A 1.0 V
Isolat i on Resistance RI-O VI-O = 1 kVDC 1011 Ω
Isolat i on Capacitance CI-O V = 0 V, f = 1 M Hz 0.4 pF
Rise Time *2 trVCC = 5 V, I C = 2 mA, RL = 100 Ω200
µ
s
Fall Time *2 tf200
*1 CTR1 = IC1/IF1, CTR2 = IC2/IF2
I
F1
I
F2
I
C1
I
C2
V
CE
*2 Test circuit for switching time
PW = 1 ms,
Duty cycle = 1/10
Pulse input V
CC
V
OUT
R
L
= 100 Ω50 Ω
I
F
Input monitor
Data Sheet P11310EJ5V0DS00 5
PS2706-1,PS2706-2,PS2706-4
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
100
50
25
0
75
25 50 75 100
Ambient Temperature T
A
(˚C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE 200
150
100
50
025 50 75 100
Ambient Temperature T
A
(˚C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PS2706-1
1.5 mW/˚C
PS2706-2,
PS2706-4
1.2 mW/˚C
50 000
1
1 000
5 000
100
10
10 000
500
50
5
–60 0 40 80–40 –20 20 60 100
Ambient Temperature T
A
(˚C)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
V
CE
= 40 V
24 V
10 V
5 V
2 V
100
0.1
1
0.01
10
0.6 1.0 1.4 1.60.8 1.2
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
300
10
0.1
30
0.3
100
3
1
0.6 1.2 1.6
0.4 0.8 1.4
1.0
Collector Saturation Voltage V
CE (sat)
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
I
F
= 10 mA
1 mA
0.5 mA
5 mA
0.2 mA
0.1 mA
FORWARD CURRENT vs.
FORWARD VOLTAGE
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
80
60
40
20
0
–40
–60
–80
–20
–1.2 0 0.4 1.2 1.6–1.6 –0.8 –0.4 0.8
Data Sheet P11310EJ5V0DS00
6
PS2706-1,PS2706-2,PS2706-4
1.2
0.6
0.0
0.8
1.0
0.4
0.2
025 50 100
–50 –25 75
Ambient Temperature TA (˚C)
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
Normalized Current Transfer Ratio CTR
Normalized to 1.0
at TA = 25 ˚C,
IF = 1 mA, VCE = 2 V
,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,
,,,,,,,,,,,,,,,
Forward Current IF ( A)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
Forward Current IF (mA)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
1 000
5
1
500
100
50
10
50 500 5 k
100 1 k
Load Resistance RL (Ω)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
µ
VCC = 5 V, IC = 2 mA,
CTR = 2 200 %
tf
trtd
ts
5 000
1
500
1 000
50
5
100
10
50 500 5 k1 k 10 k 50 k100
Load Resistance RL (Ω)
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
µ
IF = 1 mA, VCC = 5 V,
CTR = 2 200 % tf
ts
tr
td
µ
180
80
0
140
120
20
40
60
100
160
61024 8
Collector to Emitter Voltage VCE (V)
Collector Current IC (mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
IF = 5 mA
0.5 mA
1 mA
2 mA
10
0
500
1 000
1 500
2 000
2 500
3 000
50 100 300
VCE = 2 V
0
1 000
2 000
3 000
4 000
5 000
6 000
7 000
8 000
9 000
10 000
10150.5
VCE = 2 V
Data Sheet P11310EJ5V0DS00 7
PS2706-1,PS2706-2,PS2706-4
1.2
1.0
0.0
0.4
0.2
0.8
0.6
10
2
10
3
110
4
10
5
10
6
Time (Hr)
LONG TERM CTR DEGRADATION
CTR (Relative Value)
I
F
= 1 mA, T
A
= 60 ˚C
I
F
= 1 mA, T
A
= 25 ˚C
–10
–20
0
–5
–15
5
100
0.5 10.1 5 10 50
Frequency f (kHz)
Normalized Gain G
V
FREQUENCY RESPONSE
I
F
= 1 mA,
V
CE
= 2 V
R
L
= 100 Ω
Remark The graphs indicate nominal characteristics.
Data Sheet P11310EJ5V0DS00
8
PS2706-1,PS2706-2,PS2706-4
TAPING SPECIFICATIONS (in millimeters)
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1 1.55±0.1
1.75±0.1
5.5±0.1
12.0±0.2
4.6±0.1
2.4±0.1
7.4±0.1
0.3
8.0±0.1
Tape Direction
PS2706-1-E3
PS2706-1-F3 PS2706-1-E4
PS2706-1-F4
Outline and Dimensions (Reel)
Packing: PS2706-1-E3, E4 900 pcs/reel
PS2706-1-F3, F4 3 500 pcs/reel
1.5±0.5
1
2
0
˚
2.0±0.5
6.0±1
21.0±0.8
φ
6
0
˚
12.4+2.0
–0.0
18.4 MAX.
1.5±0.1 1.5±0.1
66
φ
13.0±0.5
φ
PS2706-1-E3, E4: 178
PS2706-1-F3, F4: 330
φ
φ
Data Sheet P11310EJ5V0DS00 9
PS2706-1,PS2706-2,PS2706-4
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering
• Peak reflow temperature 235 °C (package surface temperature)
• Time of temperature higher than 210 °C 30 seconds or less
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
60 to 90 s
(preheating)
210 ˚C
120 to 160 ˚C
Package Surface Temperature T (˚C)
Time (s)
(heating)
to 10 s
to 30 s
235 ˚C (peak temperature)
Recommended Temperature Profile of Infrared Reflow
Peak temperature 235 ˚C or below
(2) Dip soldering
• Temperature 260 °C or below (molten solder temperature)
• Time 10 seconds or less
• Number of times One
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
(3) Cautions
•Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
Data Sheet P11310EJ5V0DS00
10
PS2706-1,PS2706-2,PS2706-4
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter Symbol Speck Unit
Applic at i on classification (DI N V DE 0109)
for rated li ne v ol tages ≤ 300 Vr.m.s .
for rated li ne v ol tages ≤ 600 Vr.m.s . IV
III
Climati c test clas s (DIN IEC 68 Teil 1/09.80) 55/100/21
Dielect ri c strength
maximum operating isolation voltage
Test v ol t age (partial discharge test, procedure a for type test and random tes t)
Upr = 1.2 × UIORM, Pd < 5 pC
UIORM
Upr
710
850 Vpeak
Vpeak
Test v ol t age (partial discharge test, procedure b for random t est)
Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 140 Vpeak
Highest perm i ssible overvoltage UTR 6 000 Vpeak
Degree of pollut i on (DI N V DE 0109) 2
Clearance dis tance > 5mm
Creepage distance > 5mm
Comparativ e tracki ng i ndex (DIN IE C 112/VDE 0303 part 1) CTI 175
Material group (DIN VDE 0109) III a
Storage tem perature range Tstg −55 to +150 °C
Operating tem perat ure range TA–55 to +100 °C
Isolat i on resistance, m i ni m um value
VIO = 500 V dc at T A = 25 °C
VIO = 500 V dc at T A MAX. at least 100 °CRi s MI N.
Ris MIN. 1012
1011 Ω
Ω
Safety maxi m um ratings (m ax i mum permissible i n case of fault, see thermal
derating curve)
Package temperature
Current (input c urrent IF, Psi = 0)
Power (output or total power dissipat i on)
Isolat i on resistance
VIO = 500 V dc at T A = 175 °C (Tsi)
Tsi
Isi
Psi
Ris MIN.
150
200
300
109
°C
mA
mW
Ω
Data Sheet P11310EJ5V0DS00 11
PS2706-1,PS2706-2,PS2706-4
[MEMO]
PS2706-1,PS2706-2,PS2706-4
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEPOC is a trademark of NEC Corporation.
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
