PRELIMINARY
ES1J thru ES1M
FEA T URES
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
ME CHANICA L DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
SMA
All Dimensions in millimeter
SMA
DIM. MIN. MAX.
A
C
D
E
F
G
H
B 4.06 4.57
2.92 2.29
1.27 1.63
0.31 0.15
4.83 5.59
0.05 0.20
2.01 2.62
0.76 1.52
B
A
C
HEF
GD
NOTES : 1.Reverse Recovery Test Conditions :I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resist ance junction to Lead.
SURFA CE MOUNT
SUPER FA ST RECTIFIERS
REVERSE VOLTAGE -
600
to
100 0
Volts
FORWARD CURRENT -
1. 0
Ampere
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
I
R
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum Rec urrent Pea k R everse Voltag e
Maximu m R MS Voltage
Maximum DC Blocking Voltage
Maximum forwar d Voltage at 1 . 0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=125 C
@T
J
=25 C
1.0
30
1.3
5
200
T
J
Operating Temperature Range
-55 to +150
T
STG
Storage Tem perature Range
-55 to +150 C
C
J
Typical Junction Capa c it anc e (Not e 2)
10
pF
uA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
@T
L
=110 C
600
420
600
ES1J
Maximum Reverse Recovery Time (Note 1)
T
RR
50
ns
Typical Thermal Resistance (Note 3)
R
0JL
25
C/W
1.7
1000
700
1000
ES1M
800
560
800
ES1K
1.5
35
C
MAXIMUM RATINGS AND ELECTRICAL CHA RACTERISTICS
Ratings at 25
℃
amb ien t tem perature unless otherw i s e specifi e d .
Sin gle ph ase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SEMICONDUCTOR
LITE-ON
REV. 1-PRE, 01-Dec-2000, KSGA03