Standard Power MOSFETs BUZ 11 N-Channel Enhancement-Mode Power Fieid-Effect Transistors 30 A, 50 V lpston) = 0.04.0 Features: s SOA is power-clissipation limited m Nanosecond switching speeds a Linear transfer characteristics s High input impedance u Majority carrier device The BUZ 11 is an n-channel enhancement-mode silicon- gate power field-effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- drive power. This type can be operated directly from inte- grated circuits. The BUZ 11 is supplied in the JEDEC TO-220AB plastic package. MAXIMUM RATINGS, Absolute-Maximum Values (Tc = 25C): DRAIN-SOURCE VOLTAGE ...... 0.0... cece cece eee ence eee eee eee DRAIN-GATE VOLTAGE, Ros = 20 kQ GATE-SOURCE VOLTAGE ...............008- DRAIN CURRENT, RMS Continuous Tc = 30C ...... 02-2. Pulsed Te = 25 C POWER DISSIPATION @ Te = 25 C OPERATING AND STORAGE TEMPERATURE ...........-..-...0000- DIN HUMIDITY CATEGORY DIN 40040 .......... 0... c eee eee eee IEC CLIMATIC CATEGORY DIN IEC 68-1 ......0 0.00.0 eee eee eee 3-2 File Number 2253 N-CHANNEL ENHANCEMENT MODE $s 92CS -33741 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE | ol DRAIN __}| = | JOP VIEW GATE 92cs-39528 JEDEC TO-220AB DRAIN (FLANGE) ence ene e eee eeee Voss 50 Vv se eeee Vocr 50 Vv beet ee Ves +20 Vv eee e eee e eee eee lo 30 A seeeeee tom 120 A see eeeee Pr 75 WwW ete e cena eee Tj, Tata -55 to +150 C wba e eee nee e eens ~ E fete e eee cece e eee ene 55/150/56 Standard Power MOSFETs ELECTRICAL CHARACTERISTICS At Case Temperature (Tc) = 25C Unless Otherwise Specified LIMITS CHARACTERISTIC TEST CONDITIONS IT: MIN. TYP. MAX. UNITS Drain-Source Breakdown Voltage BVoss Ves =0V 50 _ _ Ip = 0.25 mA Vv Gate-Threshold Voltage Vesitni Vos = Ves = 2.1 3 4 lo=1mA Zero-Gate Voltage Drain Current loss T) = 26C _ 20 250 Tj = 125 C _ 100 1000 HA Vos = 50 V, Ves = OV Gate-Source Leakage Current Jess Vas = 20 V _ 10 100 nA Vos =O V Drain-Source On Resistance fostom Ves = 10V _ 0.03 0.04 Q ID=15A Forward Transconductance Ors Vos = 25 V 40 8.0 _ s ID=15A Input Capacitance Ciss Ves = OV _ 1500 2000 Output Capacitance Coss Vos = 25V _ 750 1100 pF Reverse Transfer Capacitance Grss f= 1 MHz 250 400 Turn-On Time ton tatons Veo = 30 V _ 30 45 (ton = tation + te) t ID=3A _ 70 410 Ves = 10 V ns Turn-Off Time tor tatotn es - 180 230 = Res = 502 (tott = tarot + tr) t 430 170 Thermal Resistance, Junction-to-Case Raic = 167 C/W Thermal Resistance, Junction-to-Ambient Rea =75 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS LIMITS Ni UNITS CHARACTERISTIC TEST CONDITIONS MIN. TYP. MAX. i i _ _ 30 Continuous Reverse Drain Current Iba Te = 25C A Pulsed Reverse Drain Current Ipam _ _ 120 Diode Forward Voltage Vsp Ir = 2x lon _ 26 Vv Ves = 0V, T,= 25C w ; Reverse Recovery Time tr T, = 25C, le = lor _ 200 _ ns Reverse Recovered Charge Qar | dr/dt = 100 A/ys, Va = 30 V _- 0.25 = uC 103 = 2 ~ w DRAIN CURRENT (lo) ~ A 3 5 i t 7 r | el T t 10 70 5 10! 5_. 10? DRAIN-TO-SOURCE VOLTAGE (Vps) V Fig. 1 - Maximum safe operating areas for aif types. 3-3 Standard Power MOSFETs BUZ 11 80 70 n Oo ao o POWER DISSIPATION (P1) W ow - ao Qo id Go = oO 0 50 100 150 CASE TEMPERATURE (Tc) C Fig. 2 - Power vs. temperature derating curve for all types. 0.10 0.08 S o a 2 > DRAIN-TO-SOURCE ON RESISTANCE lpg fom 9 0.02 0 -50 0 50 100 150 JUNCTION TEMPERATURE (T )C Fig. 4 - Normalized drain-to-source on resistance to junction temperature for alt types. 7) 80 ws PULSE TEST Re Y= 20,0V 50 100V < 1 00 +2 Eb z iw 30 c 3 Oo z = 20 c Oo 10 4,0V 45V 4ov 0 1 2 3 4 5 Vv 6 0 DRAIN-TO-SOURCE VOLTAGE (Vos) V Fig. 6 - Typical output characteristics. 3-4 Nn w g at 5 3 3. 3 a! ae ze w & zy z= im w < So 0 -50 0 50 100 150 JUNCTION TEMPERATURE (Ty) *C Fig. 3 - Normalized gate threshold voltage as a function of junction temperature for all types. 20 80 ws PULSE TEST 10 ON-STATE DRAIN CURRENT [loton} A 7 123 6 5 6 aoev GATE-TO-SOURCE VOLTAGE (Vas) V Fig. 5 - Typical transfer characteristics for all types. 80 ws PULSE TEST = 25V TRANSCONDUCTANCE (gis) S 0 5 10 bi] 20 DRAIN CURRENT (ip) A Fig. 7 - Typical transconductance vs. drain current. Standard Power MOSFETs BUZ 11 015 10 oe Ves = 0, f = 1 MHz | 5 w us Z 010 ; 10 b o w a H yD w x Zz 8 = ud 9 005 & 49" 3 Oo a 5 un < zt a 0 10? 0 20 40 60 0 10 20 30 40 DRAIN CURRENT (Ip) A DRAIN-TO-SOURCE VOLTAGE (Vos) V Fig. 8 - Typical on-resistance vs. drain current. Fig. 9 - Typical capacitance vs. drain-to-source voltage. 40 103 Ves = 10V 5 80 jes PULSE TEST = 925 <2 < 102 Ty= 25C TYP | sy 3 3 8 = E 5 ai Z a Ty = 150C TYP. c 20 3 101 s z 8 z 5 z 3 a ui 0 # 490 5 0 10-1 0 50 100 150 0 #058 10 15 20 2.5 3.0 CASE TEMPERATURE {Tc) t SOURCE-TO-DRAIN VOLTAGE (gp) ~ V Fig. 10 - Maximum drain current vs. case temperature. Fig. 11 - Typical source-drain diode forward voltage. > | 3 10 3 N Ww G Ww 3 # 2 D 8 i 0,5 Q 4 0,2 a z' 1 a z 95 % wi 5 0,02 z= 9,01 fi SINGLE PULSE 3 (THERMAL 10? 10 5 10 5 103 5 10? 5 10 5 10 10! 0 10 20 30 40 50 RECTANGULAR PULSE DURATION (t1) S TOTAL GATE CHARGE (Qe) nC Fig. 12 - Maximum effective transient thermal impedance, junction- Fig. 13 - Typical gate charge vs. gate-to-source voltage. to-case vs. pulse duration. 3-5