Semiconductor Group 3
BC 807
BC 808
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
DC current gain1)
IC = 100 mA; VCE = 1 V
BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40
IC = 300 mA; VCE = 1 V
BC 807-16, BC 808-16
BC 807-25, BC 808-25
BC 807-40, BC 808-40
VCollector-emitter breakdown voltage
IC = 10 mA BC 807
BC 808
V(BR)CE0
45
25 –
––
–
nA
µA
Collector cutoff current
VCB = 25 V
VCB = 25 V, TA = 150 ˚C
ICB0 –
––
–100
5
UnitValuesParameter Symbol
min. typ. max.
DC characteristics
Collector-base breakdown voltage
IC = 100 µABC 807
BC 808
V(BR)CB0
50
30 –
––
–
Emitter-base breakdown voltage, IE = 10 µAV(BR)EB0 5––
V
Collector-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA VCEsat – – 0.7
–hFE
100
160
250
60
100
170
160
250
350
–
–
–
250
400
630
–
–
–
Base-emitter saturation voltage1)
IC = 500 mA; IB = 50 mA VBEsat ––2
nAEmitter cutoff current, VEB = 4 V IEB0 – – 100
MHzTransition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz fT– 200 –
AC characteristics
pFOutput capacitance
VCB = 10 V, f = 1 MHz Cobo –10–
Input capacitance
VEB = 0.5 V, f = 1 MHz Cibo –60–