2N4237
2N4238
2N4239
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4237, 2N4238,
and 2N4239 are silicon NPN transistors mounted in
a hermetically sealed metal case, designed for power
amplifier, power driver, and switching power supply
applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL 2N4327 2N4328 2N4329 UNITS
Collector-Base Voltage VCBO 50 80 100 V
Collector-Emitter Voltage VCEO 40 60 80 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 3.0 A
Continuous Base Current IB 0.5 A
Power Dissipation PD 6.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJC 29.2 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO V
CB=Rated VCBO 100 μA
ICEV V
CE=45V, VEB=1.5V (2N4237) 100 μA
ICEV V
CE=75V, VEB=1.5V (2N4238) 100 μA
ICEV V
CE=90V, VEB=1.5V (2N4239) 100 μA
ICEV V
CE=30V, VEB=1.5V, TC=150°C (2N4237) 1.0 mA
ICEV V
CE=50V, VEB=1.5V, TC=150°C (2N4238) 1.0 mA
ICEV V
CE=70V, VEB=1.5V, TC=150°C (2N4239) 1.0 mA
ICEO V
CE=Rated VCEO 700 μA
IEBO V
EB=6.0V 500 μA
BVCEO I
C=100mA (2N4237) 40 V
BVCEO I
C=100mA (2N4238) 60 V
BVCEO I
C=100mA (2N4239) 80 V
VCE(SAT) I
C=500mA, IB=50mA 0.3 V
VCE(SAT) I
C=1.0A, IB=0.1A 0.6 V
VBE(SAT) I
C=1.0A, IB=0.1A 1.5 V
VBE(ON) V
CE=1.0V, IC=250mA 1.0 V
TO-39 CASE
R2 (18-June 2013)
www.centralsemi.com
2N4237
2N4238
2N4239
SILICON
NPN TRANSISTORS
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
hFE V
CE=1.0V, IC=50mA 30
hFE V
CE=1.0V, IC=250mA 30 250
hFE V
CE=1.0V, IC=500mA 30
hFE V
CE=1.0V, IC=1.0A 15
hfe V
CE=10V, IC=100mA, f=1.0kHz 30
fT V
CE=10V, IC=100mA, f=1.0kHz 2.0 MHz
Cob V
CB=10V, IE=0, f=100kHz 100 pF
www.centralsemi.com
R2 (18-June 2013)
2N4237
2N4238
2N4239
SILICON
NPN TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
R2 (18-June 2013)
www.centralsemi.com
