6 Lake Street, Lawrence, MA 01841 3/98 REV: B
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2
MAXIMUM RATINGS
Ratings Symbol 2N1487
2N1498 2N1488
2N1490 Units
Collector-Emitter Voltage VCEO 40 55 Vdc
Collector-Base Voltage VCBO 60 100 Vdc
Collector-Emitter Voltage VCEX 60 100 Vdc
Emitter-Base Voltage VEBO 10 Vdc
Base Current IB3.0 Adc
Collector Current IC6.0 Adc
Total Power Dissipation @ TC = 250C (1) PT75 W
Operating & Storage Junction
Temperature Range TJ, Tstg -65 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case RθJC 2.33 0C/W
1) Derate linearly 0.429 W/0C for TC > 250C
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc 2N1487, 2N1489
2N1488, 2N1490 V(BR)CEO 40
55 Vdc
Collector-Emitter Breakdown Voltage
IC = 200 µAdc 2N1487, 2N1489
2N1488, 2N1490 V(BR)CBO 60
100 Vdc
Collector-Emitter Breakdown Voltage
IC = 0.5 mAdc, VEB = 1.5 Vdc 2N1487, 2N1489
2N1488, 2N1490 V(BR)CEX 60
100 Vdc
Collector-Base Cutoff Current
VCB = 30 Vdc ICBO 25 µAdc
Emitter-Base Cutoff Current
VEB = 10 Vdc IEBO 25 µAdc
TECHNICAL DATA
2N1487 JAN, JTX, JTXV
2N1488 JAN, JTX, JTXV
2N1489 JAN, JTX, JTXV
2N1490 JAN, JTX, JTXV
Processed per MIL-PRF-19500/208
NPN HIGH-POWER SILICON TRANSISTOR
TO-33 (TO-204AA)
MIL-PRF
QPL
DEVICES