2N4403 / MMBT4403 — PNP General-Purpose Amplifier
Publication Order Number:
MMBT4403/D
© 2001 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
2N4403 / MMBT4403
PNP General-Purpose Amplifier
Ordering Information
Figure 1. 2N4403 Device Pack age Figure 2. MMBT4403 Device Packag e
Part Number Marking Package Packing Method
2N4403BU 2N4403 TO-92 3L Bulk
2N4403TF 2N4403 TO-92 3L Tape and Reel
2N4403TFR 2N4403 TO-92 3L Tape and Reel
2N4403TA 2N4403 TO-92 3L Ammo
2N4403TAR 2N4403 TO-92 3L Ammo
MMBT4403 2T SOT-23 3L Tape and Reel
EBC TO-92
SOT-23
Mark:2T
C
B
E
Description
This device is designed for use as a general-purpo se
amplifier and switch for collector currents to 500 mA.
2N4403 / MMBT4403 — PNP General-Purpose Amplifier
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Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute ma ximum ratings may damage the de vice. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty cycle operations.
Thermal Characteristics
Valu es are at TA = 25°C unle s s otherwise noted.
Notes:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
4. Device mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage -40 V
VCBO Collector-Base Voltage -40 V
VEBO Emitter-Base Voltage -5.0 V
ICCollector Current - Continuous -600 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Parameter Max. Unit
2N4403(3) MMBT4403(4)
PDTotal Device Dissipation 625 350 mW
Derate Above 25°C5.02.8mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
2N4403 / MMBT4403 — PNP General-Purpose Amplifier
Electrical Characteristics
Valu es are at TA = 25°C unle s s otherwise noted.
Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown
Voltage(5) IC = -1.0 mA, IB = 0 -40 V
V(BR)CBO Collector-Base Breakdown
Voltage IC = -0.1 mA, IE = 0 -40 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = -0.1 mA, IC = 0 -5.0 V
IBL Base Cut-Off Current VCE = -35 V, VEB = -0.4 V -0.1 μA
ICEX Collector Cut-Off Current VCE = -35 V, VEB = -0.4 V -0.1 μA
On Characteristics
hFE DC Current Gain
IC = -0.1 mA, VCE = -1.0 V 30
IC = -1.0 mA, VCE = -1.0 V 60
IC = -10 mA, VCE = -1.0 V 100
IC = -150 mA, VCE = -2.0 V(5) 100 300
IC = -500 mA, VCE = -2.0 V(5) 20
VCE(sat) Collector-Emitter Saturation
Voltage(5) IC = -150 mA, IB = -15 mA -0.40 V
IC = -500 mA, IB = -50 mA -0.75
VBE(sat) Base-Emitter Saturation Voltage IC = -150 mA, IB = -15 mA(5) -0.75 -0.95 V
IC = -500 mA, IB = -50 mA -1.30
Small Signal Characteristics
fTCurrent Gain - Bandwidth Product IC = -20 mA, VCE = -10 V,
f = 100 MHz 200 MHz
Ccb Collector-Base Capacitance VCB = -10 V, IE = 0,
f = 140 kHz 8.5 pF
Ceb Emitter-Base Capacitance VBE = -0.5 V, IC = 0,
f = 140 kHz 30 pF
hie Input Impedance IC = -1.0 mA, VCE = -10 V,
f = 1.0 kHz 1.5 15.0 kΩ
hre Voltage Feedback Ratio IC = -1.0 mA, VCE = -10 V,
f = 1.0 kHz 0.1 8.0 x10-4
hfe Small-Signal Current Gain IC = -1.0 mA, VCE = -10 V,
f = 1.0 kHz 60 500
hoe Output Admittance IC = -1.0 mA, VCE = -10 V,
f = 1.0 kHz 1100μmhos
Switching Characteristics
tdDelay Time VCC = -30 V, IC = -150 mA,
IB1 = -15 mA 15 ns
trRise Time 20 ns
tsStorage Time VCC = -30 V, IC = -150 mA,
IB1 = IB2 = -15 mA 225 ns
tfFall Time 30 ns
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2N4403 / MMBT4403 — PNP General-Purpose Amplifier
Typical Performance Characteristics
Figure 3. Typical Pulsed Current Gai n vs.
Collector Current Figure 4. Colle ctor-Emitter Saturation Voltage vs.
Collector Current
Figure 5. Base-Em itter Saturation Voltage
vs. Collector Current Figure 6. Base-Emitter On Voltage vs.
Collector Current
Figure 7. Collect or Cut-Off Current vs.
Ambient Temperature Figure 8. Input and Output Capacitance vs.
Revers e B ia s Voltage
0.1 0.3 1 3 10 30 100 300
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
h - TYPICAL PULSED CURRENT GAIN
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
110100500
0
0. 1
0. 2
0. 3
0. 4
0. 5
I - COLLECTOR CURRE NT (mA)
V - COLLECTOR EMITTER VOLTAGE (V)
C
CESAT
β= 10
25 °C
- 40 °C
125 °C
110100500
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
25 °C
- 40 °C
125 °C
β= 10
0.1 1 10 25
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BE( ON)
V = 5V
CE
25 °C
- 40 °C
125°C
25 50 75 100 125
0.01
0.1
1
10
10 0
T - A MBI E NT TEMP ER AT UR E ( C)
I - COLLECTOR CURRENT (nA)
A
CBO
°
V = 35V
CB
0.1 1 10 50
0
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
CAPACITANCE (pF)
Cob
C
ib
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2N4403 / MMBT4403 — PNP General-Purpose Amplifier
Typical Performance Characteristics (Continued)
Figure 9. Switching Times vs. Collector Current Figure 10. Turn -On and Turn- Off Time s vs.
Collector Current
Figure 11. Rise Time vs.
Collector and Turn-On Base Currents Figure 12. Power Dissipation vs.
Ambient Temperature
Figure 13. Common Emitter Characteristics Figure 14. Common Emitter Characteristics
10 100 1000
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
tr
t
s
B1
C
B2
Ic
10
V = 15 V
cc
tf
td
10 100 1000
0
100
200
300
400
500
I - COLLECTOR CURRENT (mA)
TIME (nS)
I = I =
ton
t
off
B1
C
B2
I
c
10
V = 15 V
cc
10 100 500
1
2
5
10
20
50
I - COLLECTOR CURRENT (mA)
I - TURN 0N BASE CURRENT (mA)
30 ns
C
t = 15 V
r
B1
60 ns
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMPERATURE ( C)
P - POWER DISSIPATION (W)
D
o
SOT-223
TO-92
SOT-23
12 51020 50
0.1
0.2
0.5
1
2
5
I - COLLECTOR CURRENT (mA)
CHAR. RELATIVE TO VALUES AT I = -10mA
V = -10 V
CE
C
C
T = 25 C
A o
hoe
hre
hfe
hie
_ _ _ _ __
-20-16-12-8-4
0.8
0.9
1
1.1
1.2
1.3
V - COLLECTOR VOLTAGE (V)
CHAR. RELATIVE TO VALUES AT V = -10V
I = -10mA
C
CE
CE
T = 25 C
A o
hoe
h and h
re
hfe
hie
oe hfe
hie
hre
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2N4403 / MMBT4403 — PNP General-Purpose Amplifier
Typical Performance Characteristics (Continued)
Figure 15. Common Emitter Characteristics
-40-200 20406080100
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
T - AMBIENT TEMPERATURE ( C)
CHAR. RELATIVE TO VALUES AT T = 25 C
V = -10 V
CE
A
A
hoe
hre
hfe
hie
o
o
I = -10mA
C hfe
h ie
hre
hoe
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2N4403 / MMBT4403 — PNP General-Purpose Amplifier
Physical Dimensions
Figure 16. 3-LEAD, TO-92, MOLDED 0.200 IN LINE SPACING LD FORM (J61Z OPTION) (ACTIVE)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
TO-92 3L (Tape and Reel, Ammo)
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2N4403 / MMBT4403 — PNP General-Purpose Amplifier
Physical Dimensions (Continued)
Figure 17. 3-LEAD, JEDEC TO-92 COMPLIANT STRAGHIT LEAD CONFIGURATION (OLD TO92AM3)
D
TO-92 3L (Bulk)
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Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any
manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
2N4403 / MMBT4403 — PNP General-Purpose Amplifier
Physical Dimensions (Continued)
Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE (ACTIVE)
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor's worldwide terms and
conditions, specifically the warranty therein, which covers ON Semiconductor products.
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
SOT-23 3L
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