TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/357
T4-LDS-0156 Rev. 2 (101452) Page 1 of 5
DEVICES LEVELS
2N3634 2N3635 2N3636 2N3637 JAN
2N3634L 2N3635L 2N3636L 2N3637L JANTX
2N3634UB 2N3635UB 2N3636UB 2N3637UB JANTXV
JANS
ABSOLUTE MAXIMUM RATI NG S (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol 2N3634*
2N3635* 2N3636*
2N3637* Unit
Collector-Emitter Voltage VCEO 140 175 Vdc
Collector-Base Voltage VCBO 140 175 Vdc
Emitter-Base Voltage VEBO 5.0 5.0 Vdc
Collector Current IC 1.0 1.0 Adc
Total Power Dissipation
UB:
@ TA = +25°C
@ TC = +25°C
@ TC = +25°C
PT **
1.0
5.0
1.5
W
W
W
Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 °C
* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding
devices.
** Consult 19500/357 for De-Rating curves.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
V(BR)CEO
Vdc
IC = 10mAdc 2N3634, 2N3635
2N3636, 2N3637
140
175
Collector-Base Cutoff Current
ICBO
ηAdc
μAdc
μAdc
VCB = 100Vdc
VCB = 140Vdc
VCB = 175Vdc
2N3634, 2N3635
2N3636, 2N3637
100
10
10
Emitter-Base Cutoff Current
VEB = 3.0Vdc
VEB = 5.0Vdc IEBO
50
10
ηAdc
μAdc
Collector-Emitter cutoff Current
VCE = 100Vdc ICEO 10
μAdc
TO-5*
2N3634L, 2N3635L
2N3636L, 2N3637L
TO-39* (TO-205AD)
2N3634, 2N3 635
2N3636, 2N3 637
3 PIN
2N3634UB, 2N3635UB
2N3636UB, 2N3637UB
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0156 Rev. 2 (101452) Page 2 of 5
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
ON CHARACTERISTICS (1)
Forward-Current Transfer Ratio
hFE
IC = 0.1mAdc, VCE = 10Vdc
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 50mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
2N3634, 2N3636 25
45
50
50
30
150
IC = 0.1mAdc, VCE = 10Vdc
IC = 1.0mAdc, VCE = 10Vdc
IC = 10mAdc, VCE = 10Vdc
IC = 50mAdc, VCE = 10Vdc
IC = 150mAdc, VCE = 10Vdc
2N3635, 2N3637 55
90
100
100
60
300
Collector-Emitter Saturation Voltage
VCE(sat)
Vdc
IC = 10mAdc, IB = 1.0mAdc
IC = 50mAdc, IB = 5.0mAdc
0.3
0.6
Base-Emitter Saturation Voltage
VBE(sat)
Vdc
IC = 10mAdc, IB = 1.0mAdc
IC = 50mAdc, IB = 5.0mAdc
0.65
0.8
0.9
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions Symbol Min. Max. Unit
Forward Current Transfer Ratio
|hfe|
IC = 30mAdc, VCE = 30Vdc, f = 100MHz 2N3634, 2N3636
2N3635, 2N3637
1.5
2.0
8.0
8.5
Forward Current Transfer Ratio
hfe
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz 2N3634, 2N3636
2N3635, 2N3637
40
80
160
320
Small-Signal Short-Circuit Input Impedance
hie
Ω
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz 2N3634, 2N3636
2N3635, 2N3637
100
200
600
1200
Small-Signal Open-Circuit Input Impedance
hoe 200
μs
IC = 10mAdc, VCE = 10Vdc, f = 1.0kHz
Output Capacitance
Cobo 10 pF
VCB = 20Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0MHz
Input Capacitance
Cibo 75 pF
VEB = 1.0Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0MHz
Noise Figure
VCE = 10Vdc, IC = 0.5mAdc, Rg = 1.0kΩ
f = 100Hz
f = 1.0kHz
f = 10kHz
NF
5.0
3.0
3.0
dB
(1) Pulse Test: Pulse Width = 300μs, Duty Cycle ≤ 2.0%
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0156 Rev. 2 (101452) Page 3 of 5
SAFE OPERATING AREA
DC Tests
TC = 25°C, 1 Cycle, t = 1.0s
Test 1
VCE = 100Vdc, IC = 30mAdc
VCE = 130Vdc, IC = 20mAdc
2N3634, 2N3635
2N3636, 2N3637
Test 2
VCE = 50Vdc, IC = 95mAdc
Test 3
VCE = 5.0Vdc, IC = 1.0Adc
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0156 Rev. 2 (101452) Page 4 of 5
PACKAGE DIMENSIONS
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Beyond r maximum, TW must be held to a minimum length of .021 inch (0.53 mm).
4. TL measured from maximum HD.
5. CD shall not vary more than ±.010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 - .055 inch (1.37 - 1.40 mm) below seating plane shall be within .007 inch (0.18 mm) radius of
true position (TP) at a maximum material condition (MMC) relative to the tab at MMC. The device may be measured by
direct methods or by gauge and gauging procedure.
7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL
minimum.
8. r (radius) applies to both inside corners of tab.
9. For transistor types 2N3634 through 2N3637, LL is .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)
maximum (TO-39).
10. For transistor types 2N3634L through 2N3637L, LL is 1.500 inches (38.10 mm) minimum, and 1.750 inches (44.45 mm)
maximum (TO-5).
11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1: Physical dimensions (TO-5 and TO-39)
Dimensions
Ltr Inches Millimeters Notes
Min Max Min Max
CD .305 .335 7.75 8.51
CH .240 .260 6.10 6.60
HD .335 .370 8.51 9.40
LC .200 TYP 5.08 TYP 7
LD .016 .021 0.41 0.53 6
LL See notes 7, 9, and 10
LU .016 .019 0.41 0.48 7
L1 050 1.27 7
L2 .250 6.35 7
P .100 2.54 5
Q .050 1.27
r .010 0.254 8
TL .029 .045 0.74 1.14 4
TW .028 .034 0.71 0.86 3
α 45° TP 45° TP 6
Term 1 Emitter
Term 2 Base
Term 3 Collector
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http: //www.microsemi.com
T4-LDS-0156 Rev. 2 (101452) Page 5 of 5
FIGURE 2: Physical dimensions, surface mount 2N3634UB through 2N3637UB (UB version).
NOTES: Dimensions
1. Dimensions are in inches. Ltr Inches Millimeters Notes
2. Millimeters are given for general information only. Min Max Min Max
3. Hatched areas on package denote metallized areas. BH .046 .056 1.17 1.42
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = BL .115 .128 2.92 3.25
Shielding connected to the lid. BW .085 .108 2.16 2.74
5. In accordance with ASME Y14.5M, diameters are. CL .128 3.25
equivalent to φx symbology CW .108 2.74
LL1 .022 .038 0.56 0.96
LL2 .017 .035 0.43 0.89
LS1 .036 .040 0.91 1.02
LS2 .071 .079 1.81 2.01
LW .016 .024 0.41 0.61
r .008 .203
r
1 .012 .305
r
2 .022 .559
