Order this document by 2N5758/D SEMICONDUCTOR TECHNICAL DATA " # !!" ! 6 AMPERE POWER TRANSISTOR NPN SILICON 100 - 140 VOLTS 150 WATTS . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. * High Collector-Emitter Sustaining Voltage -- VCEO(sus) = 100 Vdc (Min) * DC Current Gain @ IC = 3.0 Adc -- hFE = 25 (Min) * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 3.0 Adc IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (1) Rating Symbol 2N5758 Unit VCEO 100 Vdc Collector-Base Voltage VCB 100 Vdc Emitter-Base Voltage VEB 7.0 Vdc Collector Current -- Continuous Peak IC 6.0 10 Adc Base Current IB 4.0 Adc Total Device Dissipation @ TC = 25_C Derate above 25_C PD 150 0.857 Watts W/_C TJ, Tstg - 65 to + 200 _C Symbol Max Unit JC 1.17 _C/W Collector-Emitter Voltage Operating and Storage Junction, Temperature Range CASE 1-07 TO-204AA (TO-3) THERMAL CHARACTERISTICS (1) Characteristic Thermal Resistance, Junction to Case (1) Indicates JEDEC Registered Data. PD, POWER DISSIPATION (WATTS) 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) 175 200 Figure 1. Power Derating Safe area limits are indicated by Figure 5. Both limits are applicable and must be observed. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N5758 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIIII IIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII v v *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 100 -- Vdc Collector Cutoff Current (VCE = 50 Vdc, IB = 0) ICEO -- 1.0 mAdc Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C) ICEX -- -- 1.0 5.0 Collector Cutoff Current (VCB = Rated VCB, IE = 0) ICBO -- 1.0 mAdc Emitter-Cutoff Current (VBE = 7.0 Vdc, IC = 0) IEBO -- 1.0 mAdc 25 5.0 100 -- -- -- 1.0 2.0 OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) mAdc ON CHARACTERISTICS (1) DC Current Gain (IC = 3.0 Adc, VCE = 2.0 Vdc) (IC = 6.0 Adc, VCE = 2.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc) (IC = 6.0 Adc, IB = 1.2 Adc) VCE(sat) Vdc Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 2.0 Vdc) VBE(on) -- 1.5 Vdc fT 1.0 -- MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Cob -- 300 pF Small-Signal Current Gain (IC = 2.0 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe 15 -- -- DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 0.5 Adc, VCE = 20 Vdc, ftest = 0.5 MHz) * Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width 300 s, Duty Cycle (2) fT = |hfe| * ftest. 2.0% VCC + 30 V 25 s RC +10 V SCOPE RB 0 51 D1 -10 V - 4.0 V tr, tf 10 ns DUTY CYCLE = 1.0% RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA *For PNP test circuit, reverse all polarities and D1. Figure 2. Switching Time Test Circuit 2 Motorola Bipolar Power Transistor Device Data 2N5758 1.0 0.7 tr 0.5 VCC = 30 V IC/IB = 10 VBE(off) = 5.0 V TJ = 25C t, TIME ( s) 0.3 0.2 td 0.1 0.07 0.05 0.06 0.1 0.2 0.4 0.6 2.0 1.0 IC, COLLECTOR CURRENT (AMP) 4.0 6.0 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 3. Turn-On Time 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 JC = 1.17C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) 0.05 0.02 0.01 0.03 0.02 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 2.0 3.0 5.0 t, TIME (ms) 1.0 10 20 30 50 100 200 300 500 1000 Figure 4. Thermal Response IC, COLLECTOR CURRENT (AMP) 10 0.05 ms 0.1 ms 5.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. TJ = 200C 3.0 0.5 ms 2.0 1.0 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 0.5 0.3 0.2 0.1 10 1.0 ms v 5.0 ms 2N5760 2N5758 70 200 20 30 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 300 Figure 5. Active-Region Safe Operating Area Motorola Bipolar Power Transistor Device Data 3 2N5758 6.0 VCC = 30 V IB1 = IB2 IC/IB = 10 TJ = 25C 4.0 t, TIME ( s) 3.0 2.0 ts 1.0 tf 0.6 0.4 0.3 0.06 1.0 0.2 0.4 0.6 2.0 IC, COLLECTOR CURRENT (AMP) 0.1 4.0 6.0 Figure 6. Turn-Off Time 400 TJ = 25C C, CAPACITANCE (pF) 300 Cib 200 100 80 Cob 60 40 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 7. Capacitance 500 hFE , DC CURRENT GAIN 200 TJ = 150C VCE = 2.0 V 25C 100 50 - 55C 20 10 5.0 0.06 0.1 0.2 0.4 1.0 2.0 0.6 IC, COLLECTOR CURRENT (AMP) 4.0 6.0 Figure 8. DC Current Gain 4 Motorola Bipolar Power Transistor Device Data 2N5758 PACKAGE DIMENSIONS A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C -T- E D K 2 PL 0.13 (0.005) U T Q M M Y M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q- 0.13 (0.005) M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1-07 TO-204AA (TO-3) ISSUE Z Motorola Bipolar Power Transistor Device Data 5 2N5758 Motorola reserves the right to make changes without further notice to any products herein. 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