CHP4511 RoHS COMPLIANT 6-18GHz Phase-shifter GaAs Monolithic Microwave IC _ A Description The CHP4511 is a 4-bit digital phaseshifter with an output single pole double through (SPDT) switch. It is designed for 6 to 18GHz frequency range applications. The backside of the chip is both RF and DC grounded. _ C _ D E O/I 1 I/O 180 90 45 22.5 O/I 2 The circuit is manufactured with a Power PHEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. _ B A _ E Typical on wafer measurements It is available in chip form. Main Features n n n n n n n n Broadband performances : 6-18GHz 22.5 phase step Losses < 15dB 22dBm input power at -1dBc. I/O reversible. Adaptative SPDT 0/-5V control voltage Chip size : 4.62 x 3.0 x 0.1 mm dB(S21) for 16 states dB(S11)and dB(S22) for 16 Main Characteristics Tamb. = 25C Parameter Fop Operating frequency range G Small signal gain Poi1 Output power at 1dB compression Vctrl Voltage control Min Typ Max Unit 6 18 GHz -15 -7 dB 10 -5 dBm 0 V ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHP45116216 - 04 Aug 06 1/8 United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz Phase-shifter CHP4511 Electrical Characteristics Low level control voltage = -5V, High level control voltage = 0V Pin = 5 dBm on the input, output on SPDT 1 or 2 Parameter Fop Conditions Tamb = +25C Min Operating frequency range typ. 6 Phrange Phase shifter range 0 to Max Unit 18 GHz 360 deg. Phstep Phase step S11 Input reflection coefficient -6 dB S22 Output reflection coefficient -7 dB S22off Output reflection coefficient path OFF -15 IL Insertion loss ISO Isolation between Output 1 and 2 AV Amplitude variation Pio1dB Output Power @1dB compression Poi1dB Output Power @1dB compression Parameter PPE Peak Phase Error 22.5 deg 6 to 14GHz 13 15 to 18GHz 15 25 dB dB 35 dB -1.5 / +2.5 dB In => out1 or 2 10 dBm out1 or 2 => in 12 dBm Conditions average std dev pk to pk state 22.5 22.5 5 < 3 6 / average state 45 state 90 state 180 45 5 90 5 180 10 < 6 < 6 < 6 10 / average 10 / average Unit deg 10 / average Peak Phase Error (PPE) definition: PPE(i) =measured_phase(S21) (i) - measured_phase(S21) (0) - theoretical_phase(i) (i) = state [0,15] Amplitude variation (AV) definition: AV(i) = measured_dB(S21) (i) - measured_dB(S21) (0) (i) = state [0,15] Absolute Maximum Ratings Tamb = +25C Operation of this device above anyone of these paramaters may cause permanent damage. Symbol Parameter Values Unit Vgi Phase shifter control voltage -7 to +0.6 V Pin Maximum peak input power overdrive (1) +30 dBm Top Operating temperature range -40 to +70 C Tstg Storage temperature range -55 to +125 C (1) duration < 1s. Ref. : DSCHP45116216 - 04 Aug 06 2/8 United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz Phase-shifter CHP4511 Phase Shifter Control Interface The 4-bit phase shifter is controlled by 5 voltages: State TOTAL PHASE SHIFT _ D 25 _ C 45 _ B 90 A 180 _ A 180 0 0 0 0 0 -5V 0 1 22.5 -5V 0 0 -5V 0 2 45 0 -5V 0 -5V 0 3 67.5 -5V -5V 0 -5V 0 4 90 0 0 -5V -5V 0 5 112.5 -5V 0 -5V -5V 0 6 135 0 -5V -5V -5V 0 7 157.5 -5V -5V -5V -5V 0 8 180 0 0 0 0 -5V 9 202.5 -5V 0 0 0 -5V 10 225 0 -5V 0 0 -5V 11 247.5 -5V -5V 0 0 -5V 12 270 0 0 -5V 0 -5V 13 292.5 -5V 0 -5V 0 -5V 14 315 0 -5V -5V 0 -5V 15 337.5 -5V -5V -5V 0 -5V The SPDT switch allows to choice one of the output path: SPDT Control Output Selected E 0 _ E -5V O/I 1 -5V 0 O/I 2 Ref. : DSCHP45116216 - 04 Aug 06 3/8 United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz Phase-shifter CHP4511 Typical on wafer [S] measurements at +25C Peak phase error versus frequency for all states Peak phase error versus states 6GHz< frequency < 18GHz Amplitude variation versus frequency for all states Amplitude variation versus states 6GHz< frequency < 18GHz dB(S21) versus frequency for all states dB(S21) versus states 6GHz< frequency < 18GHz Ref. : DSCHP45116216 - 04 Aug 06 4/8 United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz Phase-shifter CHP4511 dB(S11) versus frequency for all states dB(S11) versus states 6GHz< frequency < 18GHz dB(S22) versus frequency for all states dB(S22) versus states 6GHz< frequency < 18GHz dB(S21) for path OFF: in => out1, state 0 Gain and output power at 12GHz (input to output1) (20 samples) Ref. : DSCHP45116216 - 04 Aug 06 5/8 United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz Phase-shifter CHP4511 Chip Assembly and Mechanical Data A C D E Out/In 1 In/Out Out/In 2 A B E Note : 25m diameter gold wire is recommended Bonding pad positions. (Chip thickness : 100m.all dimensions are in micrometers) Ref. : DSCHP45116216 - 04 Aug 06 6/8 United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz Phase-shifter Ref. : DSCHP45116216 - 04 Aug 06 CHP4511 7/8 United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz Phase-shifter CHP4511 Ordering Information Chip form : CHP4511-99F Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S Ref. : DSCHP45116216 - 04 Aug 06 8/8 United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice