Rev. 2.4 Page 1 2009-11-10
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• Logic Level
Pin 1 Pin 2 Pin 3
GDS
Type
V
DS
I
D
R
DS(on)Package Pb-free
BUZ 73 AL H 200 V 5.5 A 0.6
Ω
PG-TO220-3 Yes
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
C = 37 ˚C
I
D
5.5
A
Pulsed drain current
T
C = 25 ˚C
I
Dpuls
22
Avalanche current,limited by
T
jmax
I
AR 7
Avalanche energy,periodic limited by
T
jmax
E
AR 6.5 mJ
Avalanche energy, single pulse
I
D = 7 A,
V
DD = 50 V,
R
GS = 25
Ω
L
= 3.67 mH,
T
j = 25 ˚C
E
AS
120
Gate source voltage
V
GS
±
20 V
ESD-Sensitivity HBM as per MIL-STD 883 Class 1
Power dissipation
T
C = 25 ˚C
P
tot
40
W
Operating temperature
T
j -55 ... + 150 ˚C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip case
R
thJC
≤
3.1 K/W
Thermal resistance, chip to ambient
R
thJA 75
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
BUZ 73AL H
. Halogen-free according to IEC61249-2-21
BUZ 73AL H
Rev. 2.4 Page 2 2009-11-10
Electrical Characteristics, at
T
j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = 0.25 mA,
T
j = 25 ˚C
V
(BR)DSS
200 --
V
Gate threshold voltage
V
GS=
V
DS,
I
D = 1 mA
V
GS(th)
1.2 1.6 2
Zero gate voltage drain current
V
DS = 200 V,
V
GS = 0 V,
T
j = 25 ˚C
V
DS = 200 V,
V
GS = 0 V,
T
j = 125 ˚C
I
DSS
-
-
10
0.1
100
1
µA
Gate-source leakage current
V
GS = 20 V,
V
DS = 0 V
I
GSS - 10 100
nA
Drain-Source on-resistance
V
GS = 5 V,
I
D = 3.5 A
R
DS(on)
- 0.5 0.6
Ω
BUZ 73AL H
Rev. 2.4 Page 3 2009-11-10
Electrical Characteristics, at
T
j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS
≥
2 *
I
D *
R
DS(on)max,
I
D = 3.5 A
g
fs
5 6.5 -
S
Input capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
iss
- 630 840
pF
Output capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
oss
- 120 200
Reverse transfer capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
rss - 60 90
Turn-on delay time
V
DD = 30 V,
V
GS = 5 V,
I
D = 3 A
R
GS = 50
Ω
t
d(on)
- 15 20
ns
Rise time
V
DD = 30 V,
V
GS = 5 V,
I
D = 3 A
R
GS = 50
Ω
t
r
- 60 90
Turn-off delay time
V
DD = 30 V,
V
GS = 5 V,
I
D = 3 A
R
GS = 50
Ω
t
d(off)
- 100 130
Fall time
V
DD = 30 V,
V
GS = 5 V,
I
D = 3 A
R
GS = 50
Ω
t
f
- 40 50
BUZ 73AL H
Rev. 2.4 Page 4 2009-11-10
Electrical Characteristics, at
T
j = 25˚C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
C = 25 ˚C
I
S
-- 5.5
A
Inverse diode direct current,pulsed
T
C = 25 ˚C
I
SM -- 22
Inverse diode forward voltage
V
GS = 0 V,
I
F = 14 A
V
SD
- 1.1 1.7
V
Reverse recovery time
V
R = 100 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
t
rr
- 140 -
ns
Reverse recovery charge
V
R = 100 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
Q
rr - 0.7 -
µC
BUZ 73AL H
Rev. 2.4 Page 5 2009-11-10
Power dissipation
P
tot =
ƒ
(
T
C)
020 40 60 80 100 120 ˚C 160
T
C
0
5
10
15
20
25
30
35
W
45
P
tot
Drain current
I
D =
ƒ
(
T
C)
parameter:
V
GS
≥
5 V
020 40 60 80 100 120 ˚C 160
T
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
A
6.0
I
D
Safe operating area
I
D =
ƒ
(
V
DS)
parameter:
D
= 0.01
, T
C = 25˚C
-1
10
0
10
1
10
2
10
A
I
D
10 0 10 1 10 2 V
V
DS
R
DS(on) =
V
DS /
I
D
DC
10 ms
1 ms
100 µs
t
p = 24.0µs
Transient thermal impedance
Z
th JC =
ƒ
(
t
p)
parameter:
D = t
p /
T
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
thJC
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0
s
t
p
single pulse 0.01
0.02
0.05
0.10
0.20
D = 0.50
BUZ 73AL H
Rev. 2.4 Page 6 2009-11-10
Typ. output characteristics
I
D =
ƒ(
V
DS)
parameter:
t
p = 80 µs
0246810 12 V16
V
DS
0
1
2
3
4
5
6
7
8
9
10
11
A
13
I
D
V
GS [V]
a
a 2.0
b
b 2.5
c
c 3.0
d
d 3.5
e
e 4.0
f
f 4.5
g
g 5.0
h
h 5.5
i
i 6.0
j
j 7.0
k
k 8.0
l
P
tot = 40W
l 10.0
Typ. drain-source on-resistance
R
DS (on) =
ƒ(
I
D)
parameter:
V
GS
0.0 1.0 2.0 3.0 4.0 5.0 6.0 A7.5
I
D
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Ω
1.8
R
DS (on)
V
GS [V] =
a
2.0
V
GS [V] =
a
a
2.5
b
b
3.0
c
c
3.5
d
d
4.0
e
e
4.5
f
f
5.0
g
g
5.5
h
h
6.0
i
i
7.0
j
j
8.0
k
k
10.0
Typ. transfer characteristics
I
D =
f
(
V
GS)
parameter:
t
p = 80 µs
V
DS
≥
2 x
I
D x
R
DS(on)max
012345678V10
V
GS
0
2
4
6
8
10
12
14
A
18
I
D
Typ. forward transconductance
g
fs =
f
(
I
D)
parameter:
t
p = 80 µs,
V
DS
≥
2 x
I
D
x R
DS(on)max
0246810 12 A15
I
D
0
1
2
3
4
5
6
7
8
9
10
S
12
g
fs
BUZ 73AL H
Rev. 2.4 Page 7 2009-11-10
Drain-source on-resistance
R
DS (on) =
ƒ
(
T
j)
parameter:
I
D = 3.5 A,
V
GS = 5 V
-60 -20 20 60 100 ˚C 160
T
j
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Ω
1.9
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th) =
ƒ
(
T
j)
parameter:
V
GS =
V
DS,
I
D = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60 -20 20 60 100 ˚C 160
T
j
2%
typ
98%
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS = 0V,
f
= 1MHz
0510 15 20 25 30 V40
V
DS
1
10
2
10
3
10
4
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F =
ƒ
(
V
SD)
parameter:
T
j
, t
p = 80 µs
-1
10
0
10
1
10
2
10
A
I
F
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0
V
SD
T
j = 25 ˚C typ
T
j = 25 ˚C (98%)
T
j = 150 ˚C typ
T
j = 150 ˚C (98%)
BUZ 73AL H
Rev. 2.4 Page 8 2009-11-10
Avalanche energy
E
AS =
ƒ
(
T
j)
parameter:
I
D = 7 A,
V
DD = 50 V
R
GS = 25
Ω
,
L
= 3.67 mH
20 40 60 80 100 120 ˚C 160
T
j
0
10
20
30
40
50
60
70
80
90
100
110
mJ
130
E
AS
Typ. gate charge
V
GS =
ƒ
(
Q
Gate)
parameter:
I
D puls = 63 A
010 20 30 40 50 60 70 80 nC 100
Q
Gate
0
2
4
6
8
10
12
V
16
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS =
ƒ
(
T
j)
-60 -20 20 60 100 ˚C 160
T
j
180
185
190
195
200
205
210
215
220
225
230
V
240
V
(BR)DSS
BUZ 73AL H
Rev. 2.4
Page 9
2009-11-10
Package Drawing: TO220-3
BUZ 73AL H
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
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the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.4
2009-11-10