GBU8A thru GBU8M Vishay Semiconductors formerly General Semiconductor Glass Passivated Single-Phase Bridge Rectifier Features Case Style GBU 0.140 (3.56) 0.130 (3.30) 0.880 (22.3) 0.860 (21.8) 0.020 R (TYP.) 0.125 (3.2) x 45o CHAMFE R 0.160 (4.1) 0.140 (3.5) 0.310 (7.9) 0.290 (7.4) 9o TYP . 0.740 (18.8) 0.720 (18.3) 0.075 (1.9)R . 0.085 (2.16) 0.065 (1.65) 0.080 (2.03) 0.060 (1.52) 0.710 (18.0) 0.690 (17.5) 0.100 (2.54) 0.085 (2.16) 5o TYP . 0.085 (2.16) 0.075 (1.90) 0.080 (2.03) 0.190 (4.83) 0.210 (5.33) * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * This series is UL listed under the Recognized Component Index, file number E54214 * High case dielectric strength of 1500 VRMS * Ideal for printed circuit boards * Glass passivated chip junction * High surge overload rating * High temperature soldering guaranteed: 260C/10 seconds, 0.375 (9.5mm) lead length, 5lbs. (2.3kg) tension Mechanical Data 0.050 (1.27) 0.040 (1.02) 0.065 (1.65) Reverse Voltage 50 and 1000V Forward Current 8.0A 0.022 (0.56) 0.018 (0.46) Polarity shown on front side of case, positive lead by beveled corner Dimensions in inches and (millimeters) Case: Molded plastic body over passivated junctions Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any (Note 2) Mounting Torque: 5 in-lbs max. Weight: 0.15 oz., 4.0 g Packaging codes/options: 1/250 EA. per Bulk Tray Stack Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Symbol GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M Unit Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified output current at TC = 100C (Note 1) IF(AV) 8.0 A Peak forward surge current single sine-wave superimposed on rated load (JEDEC Method) TJ = 150C IFSM 200 A I2t 166 A2sec RJA RJC 21 2.2 C/W TJ, TSTG -55 to +150 C Rating for fusing (t < 8.3ms) Typical thermal resistance per leg (Note 3) Operating junction and storage temperature range Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Symbol GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M Unit Maximum instantaneous forward voltage drop per leg at 8.0 A VF 1.0 V Maximum DC reverse current at TA = 25C rated DC blocking voltage per legTA = 125C IR 5.0 500 A Typical junction capacitance per leg at 4V, 1MHz CJ 211 94 pF Notes: (1) Units case mounted on 3.2 x 3.2 x 0.12" thick (8.2 x 8.2 x 0.3cm) Al plate heatsink (2) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screws (3) Units mounted in free air, no heatsink on P.C.B., 0.5 x 0.5" (12 x 12mm) copper pads, 0.375" lead length Document Number 88616 07-Oct-03 www.vishay.com 1 GBU8A thru GBU8M Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Leg Fig. 1 - Derating Curve Output Rectified Current 250 60 HZ Resistive or Inductive Load Peak Forward Surge Current (A) Average Forward Output Current (A) 10 8.0 Heatsink mounting on 3.2 x 3.2 x 0.12" THK (8.2 x 8.2 x 0.3cm) AL. PLATE 6.0 4.0 2.0 0 20 50 80 120 100 100 50 100 10 1 150 Case Temperature (C) Number of Cycles at 60 HZ Fig. 3 - Typical Forward Characteristics Per Leg Fig. 4 - Typical Reverse Characteristics Per Leg 100 500 Instantaneous Reverse Current (A) Instantaneous Forward Current (A) 150 0 0 10 1 0.1 Pulse Width = 300s 1% Duty Cycle TJ = 25C 0.01 TJ = 150C 100 TJ = 125C 10 1 50 - 400V 600 - 1000V 0.1 TJ = 25C 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 20 60 40 80 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance Per Leg Fig. 6 - Typical Transient Thermal Impedance Per Leg 100 100 TJ = 25C f = 1.0 MHZ Vsig = 50mVp-p 100 50 - 400V 600 - 1000V 10 0.1 1 10 Reverse Voltage (V) www.vishay.com 2 100 Transient Thermal Impedance (C/W) 1,000 Junction Capacitance (pF) TJ = 150C 8.3ms Single Half Sine-Wave (JEDEC Method) 200 10 1 0.1 0.01 0.1 1 10 100 t - Heating Time (sec.) Document Number 88616 07-Oct-03