IRF830 RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Ease of Paralleling D Fast Switching Characteristic Simple Drive Requirement G BVDSS 500V RDS(ON) 1.5 ID 4.5A S Description APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. G D S TO-220(P) The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage 20 V ID@TC=25 Continuous Drain Current, V GS @ 10V 4.5 A ID@TC=100 Continuous Drain Current, V GS @ 10V 2.8 A 18 A 74 W 0.59 W/ 101 mJ 4.5 A 1 IDM Pulsed Drain Current PD@TC=25 Total Power Dissipation Linear Derating Factor 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Value Unit Rthj-c Thermal Resistance Junction-case Max. 1.7 /W Rthj-a Thermal Resistance Junction-ambient Max. 62 /W Data & specifications subject to change without notice 200420071-1/4 IRF830 o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 500 - - V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.7A - - 1.5 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=2.7A - 2.4 - S VDS=500V, VGS=0V - - 25 uA Drain-Source Leakage Current (Tj=125 C) VDS=400V, VGS=0V - - 250 uA Gate-Source Leakage VGS=20V - - 100 nA ID=3.1A - 28 45 nC IDSS o Drain-Source Leakage Current (Tj=25 C) o IGSS 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=400V - 4 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 16 - nC 3 td(on) Turn-on Delay Time VDD=250V - 10 - ns tr Rise Time ID=3.1A - 15 - ns td(off) Turn-off Delay Time RG=12,VGS=10V - 41 - ns tf Fall Time RD=80.6 - 20 - ns Ciss Input Capacitance VGS=0V - 710 1140 pF Coss Output Capacitance VDS=25V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Rg Gate Resistance f=1.0MHz - 2 3.0 Min. Typ. Tj=25, IS=4.5A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Max. Units trr Reverse Recovery Time IS=3.1A, VGS=0V, - 370 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 3.9 - uC Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25 3.Pulse test THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED. 2/4 IRF830 8 5 4 10V 7 .0V 6 .0V 3 5 .0 V o T C =25 C ID , Drain Current (A) 6 ID , Drain Current (A) T C =150 o C 10V 7.0V 6.0V 4 2 V G = 4. 5 V 5.0V 2 1 V G =4.5V 0 0 0 4 8 12 16 0 20 V DS , Drain-to-Source Voltage (V) 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3 1.2 1.1 Normalized RDS(ON) Normalized BVDSS (V) I D =2.7A V G =10V 1 2 1 0.9 0 0.8 -50 0 50 100 -50 150 o T j , Junction Temperature ( C) 0 50 100 150 T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 1.4 8 1.2 T j = 150 o C Normalized VGS(th) (V) 10 T j = 25 o C IS (A) 6 4 1 0.8 0.6 2 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 IRF830 f=1.0MHz 10000 12 I D =3.1A V DS =100V V DS =250V V DS =400V 8 1000 C iss C (pF) VGS , Gate to Source Voltage (V) 10 6 C oss 4 100 C rss 2 0 10 0 10 20 30 40 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 10 ID (A) 100us 1ms 1 o T c =25 C Single Pulse 10ms 100m 1s DC 0.1 1 10 100 1000 Normalized Thermal Response (Rthjc) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4/4