FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET
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Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FQD2N100 FQD2N100TM DPAK
FQU2N100 FQU2N100TU IPAK -
330 mm 16 mm
-
2500
70
(Note 4)
(Note 4)
Electrical Characteristics TC = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 120mH, IAS = 1.6A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.0A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
Symbol Parameter Test Conditions Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA1000 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C -- 0.976 -- V/°C
IDSS Zero Gate Voltage Drain Current VDS = 1000 V, VGS = 0 V -- -- 10 µA
VDS = 800 V, TC = 125°C -- -- 100 µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 0.8 A -- 7.1 9 Ω
gFS Forward Transconductance VDS = 50 V, ID = 0.8 A -- 1.9 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 400 520 pF
Coss Output Capacitance -- 40 52 pF
Crss Reverse Transfer Capacitance -- 5 6.5 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 500 V, ID = 2.0 A,
RG = 25 Ω-- 13 35 ns
trTurn-On Rise Time -- 30 70 ns
td(off) Turn-Off Delay Time -- 25 60 ns
tfTurn-Off Fall Time -- 35 80 ns
QgTotal Gate Charge VDS = 800 V, ID = 2.0 A,
VGS = 10 V
-- 12 15.5 nC
Qgs Gate-Source Charge -- 2.5 -- nC
Qgd Gate-Drain Charge -- 6.5 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 1.5 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 6.0 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.6 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 2.0 A,
dIF / dt = 100 A/µs
-- 520 -- ns
Qrr Reverse Recovery Charge -- 2.3 -- µC