IGBT HighspeedIGBTinTrenchandFieldstoptechnology IGW40N60H3 600VIGBT Highspeedswitchingseriesthirdgeneration DataSheet IndustrialPowerControl IGW40N60H3 Highspeedswitchingseriesthirdgeneration HighspeedIGBTinTrenchandFieldstoptechnology Features: C TRENCHSTOPTMtechnologyoffering *verylowVCEsat *lowEMI *Verysoft,fastrecoveryanti-paralleldiode *maximumjunctiontemperature175C *qualifiedaccordingtoJEDECfortargetapplications *Pb-freeleadplating;RoHScompliant *completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: *uninterruptiblepowersupplies *weldingconverters *converterswithhighswitchingfrequency G C E KeyPerformanceandPackageParameters Type IGW40N60H3 VCE IC VCEsat,Tvj=25C Tvjmax Marking Package 600V 40A 1.95V 175C G40H603 PG-TO247-3 2 Rev.2.3,2014-03-12 IGW40N60H3 Highspeedswitchingseriesthirdgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 3 Rev.2.3,2014-03-12 IGW40N60H3 Highspeedswitchingseriesthirdgeneration Maximumratings Parameter Symbol Value Unit Collector-emittervoltage,Tvj25C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25C TC=100C IC 80.0 40.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 160.0 A Turn off safe operating area VCE600V,Tvj175C,tp=1s - 160.0 A Gate-emitter voltage VGE 20 V Short circuit withstand time VGE=15.0V,VCC400V Allowed number of short circuits < 1000 Time between short circuits: 1.0s Tvj=150C tSC PowerdissipationTC=25C PowerdissipationTC=100C Ptot 306.0 153.0 W Operating junction temperature Tvj -40...+175 C Storage temperature Tstg -55...+150 C s 5 Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.49 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 600 - - Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=40.0A Tvj=25C Tvj=150C Tvj=175C - 1.95 2.30 2.50 2.40 - Gate-emitter threshold voltage VGE(th) IC=0.58mA,VCE=VGE 4.1 5.1 5.7 Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25C Tvj=175C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=40.0A - 24.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA 4 V V V 40.0 A 3000.0 Rev.2.3,2014-03-12 IGW40N60H3 Highspeedswitchingseriesthirdgeneration ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 2194 - - 82 - - 65 - - 223.0 - nC - 13.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: 1.0s VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=40.0A, VGE=15V VGE=15.0V,VCC400V, tSC5s Tvj=150C - pF 235 SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 19 - ns - 33 - ns - 197 - ns - 21 - ns - 1.10 - mJ - 0.58 - mJ - 1.68 - mJ IGBTCharacteristic,atTvj=25C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25C, VCC=400V,IC=40.0A, VGE=0.0/15.0V, rG=7.9,L=90nH, C=60pF L,CfromFig.E Energy losses include "tail" and diode (IKW40N60H3) reverse recovery. SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 19 - ns - 29 - ns - 227 - ns - 22 - ns - 1.33 - mJ - 0.79 - mJ - 2.12 - mJ IGBTCharacteristic,atTvj=175C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=175C, VCC=400V,IC=40.0A, VGE=0.0/15.0V, rG=7.9,L=90nH, C=60pF L,CfromFig.E Energy losses include "tail" and diode (IKW40N60H3) reverse recovery. 5 Rev.2.3,2014-03-12 IGW40N60H3 Highspeedswitchingseriesthirdgeneration 120 100 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 100 80 60 40 TC=80 tp=1s 10 10s 50s 100s 200s 500s 1 DC TC=110 20 TC=80 TC=110 0 1 10 100 0.1 1000 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj175C,D=0.5,VCE=600V,VGE=15/0V, rG=7,9) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25C,Tj175C;VGE=15V) 325 80 300 70 250 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 275 225 200 175 150 125 100 75 50 60 50 40 30 20 10 25 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj175C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE15V,Tj175C) 6 Rev.2.3,2014-03-12 IGW40N60H3 Highspeedswitchingseriesthirdgeneration 160 120 VGE=21V 140 VGE=21V 100 120 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 19V 17V 15V 100 13V 11V 80 9V 60 7V 5V 40 19V 17V 80 15V 13V 11V 60 9V 7V 40 5V 20 20 0 0 1 2 3 4 0 5 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25C) 3 4 5 4.0 VCE(sat),COLLECTOR-EMITTERSATURATION[V] Tj=25C Tj=175C 120 IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tj=175C) 140 100 80 60 40 20 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 5 6 7 8 9 10 11 IC=20A IC=40A IC=80A 3.5 3.0 2.5 2.0 1.5 1.0 12 VGE,GATE-EMITTERVOLTAGE[V] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 7 Rev.2.3,2014-03-12 IGW40N60H3 td(off) tf td(on) tr td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] Highspeedswitchingseriesthirdgeneration 100 10 10 20 30 40 50 60 70 100 10 80 0 5 IC,COLLECTORCURRENT[A] 10 15 20 25 rG,GATERESISTOR[] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (ind.load,Tj=175C,VCE=400V,VGE=15/0V, rG=7,9,testcircuitinFig.E) Figure 10. Typicalswitchingtimesasafunctionofgate resistor (ind.load,Tj=175C,VCE=400V,VGE=15/0V, IC=40A,testcircuitinFig.E) td(off) tf td(on) tr 100 10 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] 6.0 25 50 75 100 125 150 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 175 Tj,JUNCTIONTEMPERATURE[C] typ. min. max. 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (ind.load,VCE=400V,VGE=15/0V,IC=40A, rG=7,9,testcircuitinFig.E) Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,58mA) 8 Rev.2.3,2014-03-12 IGW40N60H3 Highspeedswitchingseriesthirdgeneration 6 4.0 Eoff Eon Ets 3.5 5 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 4 3 2 1 3.0 2.5 2.0 1.5 1.0 0.5 0 10 20 30 40 50 60 70 0.0 80 0 5 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load,Tj=175C,VCE=400V,VGE=15/0V, rG=7,9,testcircuitinFig.E) 20 25 3.0 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] 15 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (ind.load,Tj=175C,VCE=400V,VGE=15/0V, IC=40A,testcircuitinFig.E) 2.5 2.0 1.5 1.0 0.5 0.0 10 rG,GATERESISTOR[] 25 50 75 100 125 150 2.5 2.0 1.5 1.0 0.5 0.0 200 175 Tj,JUNCTIONTEMPERATURE[C] 250 300 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (indload,VCE=400V,VGE=15/0V,IC=40A, rG=7,9,testcircuitinFig.E) Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load,Tj=175C,VGE=15/0V,IC=40A, rG=7,9,testcircuitinFig.E) 9 Rev.2.3,2014-03-12 IGW40N60H3 Highspeedswitchingseriesthirdgeneration 16 120V 480V 1000 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 Cies Coes Cres 100 4 2 0 0 50 100 150 200 10 250 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=40A) 20 30 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 560 15 520 tSC,SHORTCIRCUITWITHSTANDTIME[s] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 480 440 400 360 320 280 240 200 160 12 9 6 3 120 80 10 12 14 16 18 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE400V,startatTj=25C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE400V,startatTj150C) 10 Rev.2.3,2014-03-12 IGW40N60H3 ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] Highspeedswitchingseriesthirdgeneration D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 ri[K/W]: 0.02540725 0.09179841 0.1302573 0.1893012 0.0532358 i[s]: 1.3E-5 1.3E-4 1.4E-3 0.01830399 0.1308576 0.001 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedance (D=tp/T) 11 Rev.2.3,2014-03-12 IGW40N60H3 Highspeedswitchingseriesthirdgeneration PG-TO247-3 12 Rev.2.3,2014-03-12 IGW40N60H3 Highspeedswitchingseriesthirdgeneration vGE(t) 90% VGE a a b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) 2% IC t vCE(t) 2% VCE t1 t2 t3 t4 t 13 Rev.2.3,2014-03-12 IGW40N60H3 Highspeedswitchingseriesthirdgeneration RevisionHistory IGW40N60H3 Revision:2014-03-12,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2010-06-14 Release of final datasheet 2.2 2013-12-10 New value ICES max limit at 175C 2.3 2014-03-12 Max ratings Vce, Tvj 25C WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726Munchen,Germany (c)2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 14 Rev.2.3,2014-03-12