©2000 Fairchild Semiconductor International Rev. A, February 2000
BD136/138/140
PNP Epitaxial Si licon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=350µs, duty Cycle=2% Pulsed
hFE Classificntion
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD136
: BD138
: BD140
- 45
- 60
- 80
V
V
V
VCEO Collector-Emitter Voltage : BD136
: BD138
: BD140
- 45
- 60
- 80
V
V
V
VEBO Emitter-B ase Voltage - 5 V
IC Collector Current (DC) - 1.5 A
ICP Collector Current (Pulse) - 3.0 A
IB Base Current - 0.5 A
PC Collector Dissipation (TC=25°C) 12.5 W
PC Collector Dissipation (Ta=25°C) 1.25 W
TJ Junc tion Temperature 150 °C
TSTG Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emit ter Susta ining Voltage
: BD1 36
: BD1 38
: BD1 40
IC = - 30mA, IB = 0 - 45
- 60
- 80
V
V
V
ICBO Collector C ut - off Current VCB = - 30V, IE = 0 - 0.1 µA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 - 10 µA
hFE1
hFE2
hFE3
* DC Current Gain VCE = - 2V, IC = - 5mA
VCE = - 2V, IC = - 0.5A
VCE = - 2V, IC = - 150mA
25
25
40 250
VCE(sat) * Collector-Emitter Saturation Voltage I C = - 500mA, IB = - 50mA - 0.5 V
VBE(on) * Base-Emitter ON Voltage VCE = - 2V, IC = - 0. 5A - 1 V
Classification 6 10 16
hFE3 40 ~ 100 63 ~ 160 100 ~ 250
BD136/138/140
Medium Power Linear and Switching
Applications
• Complement to BD135, BD137 and BD139 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
BD136/138/140
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
-10 -100 -1000
0
10
20
30
40
50
60
70
80
90
100 VCE = -2V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-1E-3 -0.01 -0.1 -1 -10
-0
-50
-100
-150
-200
-250
-300
-350
-400
-450
-500
IC = 10 IB
IC = 20 IB
VCE(sat)[mV], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-1E-3 -0.01 -0.1 -1 -10
-0.1
-0.2
-0.3
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
V
BE
(on)
V
CE
= -5V
V
BE
(sat)
I
C
= 10 I
B
VBE[V], BASE-EMITTER VOLTAGE
IC[A], COLLECTO R CURRENT
-1 -10 -100
-0.01
-0.1
-1
-10
BD140
BD138
BD136
10us
100us
1ms
DC
IC MAX. (Pulsed)
IC MAX. (Continuous)
IC[A], COLLECTOR CURRENT
VCE[V], COL LECTOR- EMI TTE R VOLTAGE
0 25 50 75 100 125 150 175
0.0
2.5
5.0
7.5
10.0
12.5
15.0
17.5
20.0
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD136/138/140
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
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©2000 Fairchild Semiconductor International Rev. E
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Design This datasheet contains the design specifications for
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