1
Motorola Bipolar Power Transistor Device Data
. . . designed for power output stages for television, radio, phonograph and other
consumer product applications.
•Suitable for Transformerless, Line–Operated Equipment
•Thermopad
{
Construction Provides High Power Dissipation Rating for High
Reliability
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCEO
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
350
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VCB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
375
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VEB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
5.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
Peak
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
IC
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
0.5
1.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎ
ÎÎÎÎ
IB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
0.25
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
ÎÎÎÎ
ÎÎÎÎ
PD
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
20
0.16
ÎÎÎ
ÎÎÎ
Watts
W/
_
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
–65 to +150
ÎÎÎ
Î
Î
Î
ÎÎÎ
_
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
ÎÎÎÎÎ
θJC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
6.25
ÎÎÎ
ÎÎÎ
_
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ELECTRICAL CHARACTERISTICS (TC = 25
_
C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Characteristic
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Symbol
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Min
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Max
ÎÎÎÎ
Î
ÎÎ
Î
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining V oltage
(IC = 1.0 mAdc, IB = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
BVCEO
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
350
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(At rated voltage)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICBO
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
—
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
100
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
IEBO
ÎÎÎÎÎ
Î
ÎÎÎ
Î
—
ÎÎÎÎÎ
Î
ÎÎÎ
Î
100
ÎÎÎÎ
Î
ÎÎ
Î
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
30
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
240
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
SEMICONDUCTOR TECHNICAL DATA Order this document
by BD159/D
Motorola, Inc. 1998
0.5 AMPERE
POWER TRANSISTOR
NPN SILICON
350 VOLTS
20 WATTS
CASE 77–09
TO–225AA TYPE
BD159
2 Motorola Bipolar Power Transistor Device Data
25
20
15
10
5.0 0 20 40 60 80 100 120 140 160
Figure 1. Power–Temperature Derating Curve
TC, CASE TEMPERATURE (
°
C)
PD, POWER DISSIPA TION (WATTS)
1.0
10
Figure 2. “On” Voltages
IC, COLLECTOR CURRENT (mA)
0.8
0.6
0.4
0.2
020 30 50 100 200 300 500
VBE @ VCE = 10 V
VCE(sat) @ IC/IB = 10 TJ = +25
°
C
VBE @ IC/IB = 10
IC/IB = 5.0
V, VOLTAGE (VOLTS)
1.0
10
Figure 3. DC Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.01 20 30 50 100 300200
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25
°
C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
0.03
0.02
IC, COLLECTOR CURRENT (AMPS)
TJ = 150
°
Cdc
500
µ
s10
µ
s
1.0 ms
The Safe Operating Area Curves indicate IC – VCE limits
below which the device will not enter secondary breakdown.
Collector load lines for specific circuits must fall within the ap-
plicable Safe Area to avoid causing a catastrophic failure. To
insure operation below, the maximum TJ, power–tempera-
ture derating must be observed for both steady state and
pulse power conditions.
Figure 4. Current Gain
IC, COLLECTOR CURRENT (mAdc)
10 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500
300
200
70
30
20
TJ = 150
°
C
hFE, DC CURRENT GAIN
50
100 + 100
°
C
+ 25
°
C
– 55
°
C
7.0 70
VCE = 10 V
VCE = 2.0 V
BD159
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 77–09
TO–225AA TYPE
ISSUE W
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
–B–
–A– M
K
FC
Q
H
V
G
S
D
JR
U
132
2 PL
M
A
M
0.25 (0.010) B M
M
A
M
0.25 (0.010) B M
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.425 0.435 10.80 11.04
B0.295 0.305 7.50 7.74
C0.095 0.105 2.42 2.66
D0.020 0.026 0.51 0.66
F0.115 0.130 2.93 3.30
G0.094 BSC 2.39 BSC
H0.050 0.095 1.27 2.41
J0.015 0.025 0.39 0.63
K0.575 0.655 14.61 16.63
M5 TYP 5 TYP
Q0.148 0.158 3.76 4.01
R0.045 0.065 1.15 1.65
S0.025 0.035 0.64 0.88
U0.145 0.155 3.69 3.93
V0.040 ––– 1.02 –––
__
BD159
4 Motorola Bipolar Power Transistor Device Data
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BD159/D
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