Parameter Max. Units
VDS Drain- Source Voltage -14 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V ±11
ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V ±8.8 A
IDM Pulsed Drain Current ±88
PD @TA = 25°C Power Dissipation 2.5
PD @TA = 70°C Power Dissipation 1.6
Linear Derating Factor 0.02 W/°C
EAS Single Pulse Avalanche Energy110 mJ
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
7/16/99
IRF7220
HEXFET® Power MOSFET
Parameter Max. Units
RθJA Maximum Junction-to-Ambient50 °C/W
Thermal Resistance
These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve the
extremely low on-resistance per silicon area. This benefit
provides the designer with an extremely efficient device for
use in battery and load management applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering techniques.
VDSS = -14V
RDS(on) = 0.012Ω
Description
Absolute Maximum Ratings
W
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lUltra Low On-Resistance
lP-Channel MOSFET
lSurface Mount
lAvailable in Tape & Reel
Top V iew
8
1
2
3
45
6
7
D
D
DG
S
A
D
S
S
PD- 91850C
SO-8
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Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V
trr Reverse Recovery Time ––– 16 0 240 n s TJ = 25°C, IF = -2.5A
Qrr Reverse Recovery Charge ––– 1 47 220 nC di/dt = 100A/µs
Source-Drain Ratings and Characteristics
––– –––
––– ––– -88
-2.5 A
When mounted on 1 inch square copper board, t<10 sec
S
D
G
Starting TJ = 25°C, L = 1.8mH
RG = 25Ω, IAS = 11A. (See Figure 10)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -14 ––– ––– V VGS = 0V, ID = -5mA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– -0.006 ––– V/°C Reference to 25°C, I D = -1mA
––– .0082 0.012 VGS = -4.5V, ID = -11A
––– .0125 0.020 VGS = -2.5V, ID = -8.8A
VGS(th) Gate Threshold Voltage -0.60 ––– – –– V V DS = VGS, ID = -250µA
gfs Forward Transconductance 8.4 ––– ––– S VDS = -10V, ID = -11A
––– ––– -5.0 VDS = -11.2V, VGS = 0V
––– ––– -100 VDS = -11.2V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V
Gate-to-Source Reverse Leakage ––– –– – 100 VGS = 12V
QgTotal Gate Charge –– – 84 12 5 I D = -11A
Qgs Gate-to-Source Charge ––– 13 20 nC VDS = -10V
Qgd Gate-to-Drain ("Miller") Charge ––– 37 55 VGS = -5.0V
td(on) Turn-On Delay Time ––– 19 ––– VDD = -10V
trRise Time ––– 420 ––– ID = -11A
td(off) Turn-Off Delay Time ––– 140 ––– RG = 6.2Ω
tfFall Time ––– 1040 ––– RD = 0.91Ω
Ciss Input Capacitance ––– 8075 ––– VGS = 0V
Coss Output Capacitance ––– 4400 ––– pF VDS = -10V
Crss Reverse Transfer Capacitance ––– 4150 ––– ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
Ω
RDS(on) Static Drain-to-Source On-Resistance
IDSS Drain-to-Source Leakage Current
nA
ns
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
-4.5V
-11A
0
20
40
60
80
0246810
D
DS
A
-I , Dra in-to -S o urc e C urrent (A )
-V , D ra in-to-So urce V olta
g
e
(
V
)
-1.2V
300µs PULSE W IDTH
T = 25° C
VGS
TO P - 4.5V
- 4.0V
- 3.0V
- 2.0V
- 1.8V
- 1.6V
- 1.4V
BOTTOM - 1.2V
J
0
10
20
30
40
50
60
0246810
D
DS
A
-I , Drain-to-Source Current (A)
-V , D r a in -to -S o u r ce Volta
g
e
(
V
)
30 0µ s P ULS E WIDT H
T = 150°C
-1.2V
VG S
TO P - 4.5V
- 4.0V
- 3.0V
- 2.0V
- 1.8V
- 1.6V
- 1.4V
BOTTOM - 1.2V
J
1
10
100
1000
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
T = 25°C
T = 150°C
J
J
GS
D
A
-I , Drain-to-Source Current (A)
-V , G a te -to -So urce V o lta
g
e
(
V
)
V = - 1 0 V
20µ s P ULSE WID TH
DS
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
020 40 60 80 100 120
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D-11A
V =-10V
DS
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Sin
g
le Pulse
T
T = 150 C
= 25 C
°°
J
A
-V , Drain-to-Source Volta
g
e (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
4000
5000
6000
7000
8000
9000
10000
110
C, Capacitance (pF)
A
DS
-V , D rain-to-Sourc e Volta
g
e
(
V
)
C
iss
C
oss
C
rss
GS
is s
g
s
g
d ds
rss
g
d
o s s d s
g
d
V = 0V
,
f = 1kHz
C = C + C
,
C SHOR TE D
C = C
C = C + C
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5
T = 2 5°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , R ev e rse Drain C u rrent ( A)
-V , Sourc e -t o-Drain V olt a
g
e
(
V
)
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.1
1
10
100
0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
2
4
6
8
10
12
T , Case Temperature ( C)
-I , Drain Current (A)
°
C
D
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
-4.9A
-8.8A
-11A
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SO-8 Package Details
K x 45°
C
8X
L
8X
θ
H
0.2 5 (.0 10 ) M A M
A
0.10 (.004)
B 8X
0 .25 (.01 0 ) M C A S B S
- C -
6X
e
- B -
D
E
- A -
8 7 6 5
1 2 3 4
5
6
5
RECOMMENDED FOOTPRINT
0.7 2 (.028 )
8X
1.78 (.0 70 )
8 X
6.46 ( .2 55 )
1.27 ( .050 )
3X
DIM IN CHE S MIL LIMETE RS
MIN MA X MIN MA X
A .0 53 2 .0 68 8 1 .3 5 1 .7 5
A 1 .0 04 0 .0 09 8 0 .10 0 .2 5
B .0 14 .0 18 0 .3 6 0 .4 6
C .0 07 5 .0 0 9 8 0 .1 9 0 .2 5
D .1 89 .1 9 6 4 .8 0 4 .9 8
E .1 50 .1 57 3 .8 1 3 .9 9
e .0 5 0 BASIC 1 .2 7 B AS IC
e 1 .0 2 5 BASIC 0.6 3 5 BASIC
H .2 28 4 .2 4 4 0 5 .80 6 .2 0
K .0 11 .0 19 0 .2 8 0 .4 8
L 0 .1 6 .0 50 0 .4 1 1 .2 7
θ
0 ° 8 ° 0 ° 8°
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2 . CONTROL LING DIMENSION : INC H.
3. DIMENSIONS ARE SHOW N IN MILLIMETERS (INCHES).
4 . OUT LINE CONFORMS T O JEDEC OUT LINE M S - 0 12 AA.
DIM ENSION DOES NOT INCLUDE MOLD PROTRUSIONS
MOL D PROTRUSIONS NOT T O EX CEED 0 .2 5 (.00 6).
DIMENSIONS IS T HE L ENGTH OF L EAD FOR SOL DERING TO A SUBST RAT E..
5
6
A1
e1
θ
Part Marking
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WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 7/99
33 0.00
(12.992)
MAX.
14.40 ( .5 66 )
12.40 ( .4 88 )
NOTES :
1. CONTRO LLING DIMENSION : M ILLIM ETER.
2. OUTLIN E C O N FO RMS T O EIA -481 & EIA-541.
FEED DIRECTION
TERM INAL NUM BER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. C ONTRO LLING DIM ENSION : M ILLIM ETER.
2. ALL DIMENSIONS ARE SHO W N IN M ILLIM ETERS(INCHES).
3. O U TLIN E C ON FORM S TO EIA-4 81 & EIA-541.
Tape and Reel
SO-8
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