MJ11028 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

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. . . for use as output devices in complementary general purpose amplifier applica-

tions.

•High DC Current Gain — hFE = 1000 (Min) @ IC = 25 Adc

hFE = 400 (Min) @ IC = 50 Adc

•Curves to 100 A (Pulsed)

•Diode Protection to Rated IC

•Monolithic Construction with Built–In Base–Emitter Shunt Resistor

•Junction Temperature to +200

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎ

MJ11028

MJ11029

ÎÎÎÎ

MJ11030

MJ11031

ÎÎÎÎ

MJ11032

MJ11033

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎ

ÎÎÎÎ

120

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎ

ÎÎÎÎ

120

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ICM

ÎÎÎÎÎÎÎÎÎ

100

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

C @ TC = 100

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

300

1.71

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎ

–55 to +200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for

Soldering Purposes for

10 seconds

ÎÎÎÎÎ

ÎÎÎÎÎÎ

275

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

0.584

ÎÎÎ

Figure 1. Darlington Circuit Schematic

BASE

EMITTER

COLLECTOR

≈

3.0 k

≈

PNP

MJ11029

MJ11031

MJ11033

BASE

EMITTER

COLLECTOR

≈

3.0 k

≈

NPN

MJ11028

MJ11030

MJ11032

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJ11028/D

 Motorola, Inc. 1995













50 AMPERE

COMPLEMENTARY

SILICON

DARLINGTON

POWER TRANSISTORS

60–120 VOLTS

300 WATTS

*Motorola Preferred Device



 



CASE 197A–05

TO–204AE (TO–3)

     

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Breakdown Voltage (1) MJ11028, MJ11029

(IC = 1 00 mAdc, IB = 0) MJ11030, MJ11031

MJ11032, MJ11033

ÎÎÎÎ

V(BR)CEO

ÎÎÎÎ

120

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Leakage Current

(VCE = 60 Vdc, RBE = 1 k ohm) MJ11028, MJ11029

(VCE = 90 Vdc, RBE = 1 k ohm) MJ11030, MJ11031

(VCE = 120 Vdc, RBE = 1 k ohm) MJ11032, MJ11033

(VCE = 60 Vdc, RBE = 1 k ohm, TC = 150

C) MJ11028, MJ11029

(VCE = 90 Vdc, RBE = 1 k ohm, TC = 150

C) MJ11030, MJ11031

(VCE = 120 Vdc, RBE = 1 k ohm, TC = 150

C) MJ11032, MJ11033

ÎÎÎÎ

ICER

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Leakage Current (VCE = 50 Vdc, IB = 0)

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 25 Adc, VCE = 5 Vdc)

(IC = 50 Adc, VCE = 5 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

1 k

400

ÎÎÎÎ

18 k

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 25 Adc, IB = 250 mAdc)

(IC = 50 Adc, IB = 500 mAdc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

3.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 25 Adc, IB = 200 mAdc)

(IC = 50 Adc, IB = 300 mAdc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

3.0

4.5

ÎÎÎ

Vdc

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

IC, COLLECTOR CURRENT (AMP)

100

0.2

Figure 2. DC Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.1 0.5 1 2 5 10 20 50 200

0.5

0.2

BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25

SECOND BREAKDOWN LIMITED

MJ11028, 29

MJ11030, 31

MJ11032, 33

100

There are two limitations on the power–handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 200

C; TC is

variable depending on conditions. At high case tempera-

tures, thermal limitations will reduce the power that can be

handled to values less than the limitations imposed by se-

cond breakdown.

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

100 k

IC, COLLECTOR CURRENT (AMP)

50 k

20 k

10 k

5 k

2 k

500

Figure 3. DC Current Gain

1 2 5 10 10020 50

Figure 4. “On” Voltage

100

VCE = 5 V

TJ = 25

1 k

200

MJ11029, MJ11031, MJ11033 PNP

MJ11028, MJ11030, MJ11032 NPN

1 2 5 10 10020 50

TJ = 25

IC/IB = 100 VBE(sat)

(PULSED)

MJ11029, MJ11031, MJ11033 PNP

MJ11028, MJ11030, MJ11032 NPN

(PULSED)

VCE(sat)

     

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 197A–05

TO–204AE (TO–3)

ISSUE J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.530 REF 38.86 REF

B0.990 1.050 25.15 26.67

C0.250 0.335 6.35 8.51

D0.057 0.063 1.45 1.60

E0.060 0.070 1.53 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N0.760 0.830 19.31 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.30 (0.012) Y M

0.25 (0.010) T

–Q–

–Y–

     

4 Motorola Bipolar Power Transistor Device Data

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MJ11028/D

*MJ11028/D*

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